Nec Corporation

Nec Electronics Corporation

Junko Kohno

Kazunori Asano

To provide a semiconductor device that is capable of transmitting heat evolved in an active element efficiently to a heat sink member, and a manufacturing method for the semiconductor device. One of the terminals (such as drain electrode) of an active element formed in a substrate of, for example, GaAs, is thermally contacted with a heat sink member via an insulating member of, for example, aluminum nitride, exhibiting thermally conductive and electrically insulating properties. The heat sink member may, for example, be an electrically conductive member connected to another terminal of the active element, or a heat sink of a package.

Semiconductor device and method for manufacturing same

A source electrode, gate electrode, drain electrode, and a gate bus bar connected to said gate electrode are formed on a semiconductor chip. A field effect transistor unit constructed on the semiconductor chip is made up of three adjacent fingers each extending from the source electrode, gate electrode, and drain electrode. The source electrode is formed on the outer edge of the semiconductor chip from the obverse to the reverse surfaces of the semiconductor chip.

Growing community of inventors

Tokyo, Japan

Junko Kohno