Lumileds Lighting U.s., LLC

Koninklijke Philips Corporation N.v.

Philips Lumileds Lighting Company LLC

Junko Kobayashi

Werner K Goetz

Michael Ragan Krames

Tetsuya Takeuchi

Anneli Munkholm

A semiconductor structure includes a light emitting region, a p-type region disposed on a first side of the light emitting region, and an n-type region disposed on a second side of the light emitting region. At least 10% of a thickness of the semiconductor structure on the first side of the light emitting region comprises indium. Some examples of such a semiconductor light emitting device may be formed by growing an n-type region, growing a p-type region, and growing a light emitting layer disposed between the n-type region and the p-type region. The difference in temperature between the growth temperature of a part of the n-type region and the growth temperature of a part of the p-type region is at least 140&#xb0; C.

P-type layer for a III-nitride light emitting device

A method of forming a light emitting device includes providing a sapphire substrate, growing an AlGaN first layer by vapor deposition on the substrate at a temperature between about 1000&#xb0; C. and about 1180&#xb0; C., and growing a III-nitride second layer overlying the first layer. The first layer may have a thickness between about 500 angstroms and about 5000 angstroms. In some embodiments, reaction between the group V precursor and the substrate is reduced by starting with a low molar ratio of group V precursor to group III precursor, then increasing the ratio during growth of the first layer, or by using nitrogen as an ambient gas.

Growth of III-nitride films on mismatched substrates without conventional low temperature nucleation layers

A light emitting device including a nucleation layer containing aluminum is disclosed. The thickness and aluminum composition of the nucleation layer are selected to match the index of refraction of the substrate and device layers, such that 90% of light from the device layers incident on the nucleation layer is extracted into the substrate. In some embodiments, the nucleation layer is AlGaN with a thickness between about 1000 and about 1200 angstroms and an aluminum composition between about 2% and about 8%. In some embodiments, the nucleation layer is formed over a surface of a wurtzite substrate that is miscut from the c-plane of the substrate. In some embodiments, the nucleation layer is formed at high temperature, for example between 900&deg; and 1200&deg; C. In some embodiments, the nucleation layer is doped with Si to a concentration between about 3e18 cm and about 5e19 cm .

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Sunnyvale, CA, United States of America

Junko Kobayashi