Murata Manufacturing Co., Ltd.

Junko Izumitani

Masatomi Harada

Takeshi Kagawa

Hiroshi Matsubara

Nobuhiro Ishida

Tadayuki Okawa

Masutaro Nemoto

Yuki Fukui

Hideaki Ooe

A capacitor that includes a substrate, a lower electrode on the substrate, a dielectric film on the lower electrode, an upper electrode on a part of the dielectric film, a protective layer that covers the lower electrode and the upper electrode, and an external electrode that penetrates the protective layer. The external electrode is formed only in a region defined by a periphery of the upper electrode in a plan view of the capacitor viewed from an upper surface thereof towards the substrate.

Capacitor

A capacitor that includes a substrate having a first principal surface and a second principal surface, a lower electrode on the first principal surface, a dielectric film on the lower electrode, and an upper electrode on the dielectric film, wherein at least one of the lower electrode and the upper electrode has, in plan view of the first principal surface, a first region having a rectangular shape, and at least one second region protruding from at least one side of the first region.

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface opposed to each other, and a porous metal oxide film on a side of the first main surface of the semiconductor substrate, the porous metal oxide film having a plurality of pores. The semiconductor substrate has a connection electrically connected to the porous metal oxide film, and the semiconductor substrate is configured to provide a power supply path from the second main surface to the connection on the first main surface.

Semiconductor device having a porous metal oxide film and a semiconductor substrate with a connection electrically connected to the porous metal oxide film

A capacitor that includes a lower electrode; a dielectric film; an upper electrode; a first protective film that has a first through hole that opens to the upper electrode and a second through hole that opens to the lower electrode, and has a first upper surface; a second protective film that has a second upper surface located higher than the first upper surface of the first protective film; a first terminal electrode electrically connected to the upper electrode through the first through hole, and extends to at least the second upper surface of the second protective film; and a second terminal electrode electrically connected to the lower electrode through the second through hole, and extends to at least the second upper surface of the second protective film.

Thin film capacitor and method of manufacturing the same

A capacitor that includes a substrate having a first principal surface, a second principal surface facing the first principal surface, and a first end surface connecting the first principal surface and the second principal surface, a lower electrode on the first principal surface of the substrate, a dielectric film on the lower electrode, an upper electrode on the dielectric film, a protective film covering the upper electrode and having a thickness smaller than that of the substrate, and a first terminal electrode on the first end surface and electrically connected to one of the upper electrode and the lower electrode.

A capacitor that prevents generation of a substrate capacitance composed of an upper electrode, a substrate, and a lower electrode. Specifically, the capacitor includes a substrate; a lower electrode disposed on the substrate; a dielectric film disposed on the lower electrode; an upper electrode disposed on a part of the dielectric film; and a first terminal electrode that is connected to the upper electrode. Moreover, the upper electrode and the first terminal electrode are formed in a region for forming the lower electrode in a plan view of the capacitor viewed from the first terminal electrode side.

Capacitor with limited substrate capacitance

An electronic device includes a plurality of layers formed on a silicon-on-insulator (SOI) substrate. The SOI substrate includes a support substrate, a buried insulating layer formed on the support substrate, and a silicon layer formed on the buried insulating layer. A membrane structure of the electronic device includes the plurality of layers, the buried insulating later and the silicon layer but does not include the support substrate. A passivation film covers an upper surface and a side surface of the membrane structure.

Electronic device and method of manufacturing the same

A mounting substrate that includes external connection electrodes on a rear surface of a base material, and mounting electrodes on a front surface of the base material. In-hole electrodes connect the external connection electrodes and the mounting electrodes. A reflective film containing Al is located between the base material and the mounting electrodes. The reflective film is covered with an insulating film layer.

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Nagaokakyo, Japan

Junko Izumitani