Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Junko Iwanaga

Toshiya Yokogawa

Yorito Ota

Takeshi Takagi

Akira Inoue

Yoshihiko Kanzawa

Haruyuki Sorada

Tohru Saitoh

Takahiro Kawashima

Mitsuru Tanabe

Hiroyuki Masato

Atsushi Yamada

Masahiro Ishida

Akira Asai

Shigeo Hayashi

Masaki Fujikane

Shigeru Morimoto

Tadayoshi Nakatsuka

Ryou Kato

Katsuhiko Kawashima

Tetsuya Takayanagi

Kouji Katayama

A liquid treatment apparatus includes a liquid storing vessel, a first electrode, a second electrode at least partly arranged inside the vessel, a tubular first insulator surrounding a first-electrode lateral surface with a first space interposed therebetween, and including a first opening in an end surface in contact with the liquid, a tubular second insulator surrounding the first-electrode lateral surface inside the first insulator, a gas supply device supplying gas into the first space and ejecting the gas into the liquid through the first opening, and a power supply applying a voltage between the first and second electrodes and producing plasma. The second insulator is arranged with a second space interposed between the first and second insulators. Portions of the first and second insulators, those portions being positioned inside the vessel, are covered with the gas when the gas is supplied into the first space by the gas supply device.

Liquid treatment apparatus including first electrode, second electrode, and first and second insulators surrounding lateral surface of first electrode

Disclosed is a light-emitting diode element including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, an active layer. A first electrode is provided on a surface of the second semiconductor layer. A second electrode is provided in a second region of the principal surface of the first semiconductor layer. A conductive layer is arranged such that the conductive layer covers a third region, a fourth region, and a fifth region in the rear surface of the first semiconductor layer. In the rear surface of the first semiconductor layer, the first semiconductor layer includes a sixth region which is not covered with the conductive layer and which overlaps another part of the first electrode. The first semiconductor layer is not provided with a through electrode.

Light-emitting diode element and light-emitting diode device

A nitride-based semiconductor light-emitting device of an embodiment includes a semiconductor multilayer structure having a growing plane which is an m-plane and being made of a GaN-based semiconductor. The semiconductor multilayer structure includes a n-type semiconductor layer, a p-type semiconductor layer, a p-side electrode provided on the p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer. The ratio of the thickness of the active layer to the thickness of the n-type semiconductor layer, D, is in the range of 1.8&#xd7;10&#x2266;D&#x2266;14.1&#xd7;10. The area of the p-side electrode, S, is in the range of 1&#xd7;10&#x3bc;m&#x2266;S&#x2266;9&#xd7;10&#x3bc;m. A maximum current density which leads to 88% of a maximum of the external quantum efficiency is not less than 2 A/mm.

Nitride semiconductor light-emitting element and manufacturing method therefor

A nitride-based semiconductor light-emitting deviceincludes: an n-type GaN substratewhich has an m-plane principal surface; a current diffusing layerprovided on the n-type GaN substrate; an n-type nitride semiconductor layerprovided on the current diffusing layer; an active layerprovided on the n-type nitride semiconductor layer; a p-type nitride semiconductor layerprovided on the active layer; a p-electrodewhich is in contact with the p-type nitride semiconductor layer; and an n-electrodewhich is in contact with the n-type GaN substrateor the n-type nitride semiconductor layer. The donor impurity concentration of the n-type nitride semiconductor layeris not more than 5&#xd7;10cm, and the donor impurity concentration of the current diffusing layeris ten or more times the donor impurity concentration of the n-type nitride semiconductor layer

Nitride semiconductor light-emitting element and process for production thereof

A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.

Semiconductor device and method for fabricating the same

A light-emitting diode element includes: an n-type conductive layerbeing made of a gallium nitride-based compound, a principal surface being an m-plane; a semiconductor multilayer structureprovided on a first regionof the principal surface of the n-type conductive layer, the semiconductor multilayer structureincluding a p-type conductive layerand an active layer; a p-electrodeprovided on the p-type conductive layer; a conductor portionprovided on a second regionof the principal surface of the n-type conductive layer, the conductor portionbeing in contact with an inner wall of a through hole; and an n-type front surface electrodeprovided on the second regionof the principal surface of the n-type conductive layer, the n-type front surface electrodebeing in contact with the conductor portion

Light-emitting diode

FINFET-type semiconductor device and method for fabricating the same

A semiconductor device according to this invention includes: a first insulating layer (); a first body section () including an island-shaped semiconductor formed on the first insulating layer; a second body section () including an island-shaped semiconductor formed on the first insulating layer; a ridge-shaped connecting section () formed on the first insulating layer to interconnect the first body section and the second body section; a channel region () formed by at least a part of the connecting section in lengthwise direction of the connecting section; a gate electrode () formed to cover a periphery of the channel region, with a second insulating layer intervening therebetween; a source region formed to extend over the first body section and a portion of the connecting section between the first body section and the channel region; and a drain region formed to extend over the second body section and a portion of the connecting section between the second body section and the channel region, wherein a semiconductor forming the channel region has a lattice strain.

Strained channel finFET device

The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semiconductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.

Diode, method for fabricating the diode, and coplanar waveguide

The diode of the present invention includes: a cathode electrode and an anode electrode that are disposed on a semi-conductor substrate and are spaced apart from each other; and a shielding metal member placed between the cathode and anode electrodes.

A conductive layer made of n-type GaAs is formed on a semi-insulating substrate made of GaAs. A pair of contact regions made of n.sup.+ -type GaAs are formed on the conductive layer. A source electrode is formed on the left-hand contact region, while a drain electrode is formed on the right-hand contact region. A gate recessed region is formed in the region of the conductive layer located between the pair of contact regions so that a gate electrode is formed on the gate recessed region. A depressed portion is formed in the gate recessed region of the conductive layer. The wall face of the depressed portion closer to the gate electrode is flush with or protruding from the side face of the gate electrode facing the drain electrode.

Field-effect transistors and method of manufacturing the same

A channel layer made of n-type GaAs doped with Si, a hole absorption layer made of InGaAs having a valance band higher in energy level than that of GaAs, and an undoped layer made of GaAs are formed sequentially on a semi-insulating substrate made of GaAs. A gate recess region having a pair of sidewall portions each consisting of an upper sidewall composed of the undoped layer and a lower sidewall composed of the hole absorption layer is formed on the channel region. The channel region is exposed in the gate recess region. An indent having an undercut configuration is formed in the lower sidewall of the gate recess region. A gate electrode is formed to extend over a stepped portion composed of the sidewall portion of the gate recess region closer to a drain electrode.

Growing community of inventors

Osaka, Japan

Junko Iwanaga