Micron Technology Incorporated

Junjun Wang

Hua Fang Tan

Yi Heng Sun

Yanming Liu

Deping He

Xu Zhang

Xing Wang

Guan Zhong Wang

Huachen Li

Tian Liang

De Hua Guo

Zhenzhen Yang

Zhanqiang Su

Methods, systems, and devices for dynamic voltage supply for memory circuit are described. An apparatus may adjust a supply voltage based on a process corner and a temperature of the memory system. An apparatus may include a memory array and a controller. The controller may determine a first temperature of the apparatus is less than a first temperature threshold at a first time. The controller may transition a voltage supplied to the controller from a first voltage level to a second voltage level based on determining the first temperature is less than the first temperature threshold. The controller may determine a second temperature is greater than a second temperature threshold at a second time. The controller may transition the voltage supplied to the controller from the second voltage level to the first voltage level based on determining the second temperature is greater than the second temperature threshold.

Dynamic voltage supply for memory circuit

Methods, systems, and devices for techniques for accessing managed not-AND (NAND) memory are described. An indicator of a first type that indicates whether each physical address in a group of physical addresses stores valid data may be accessed. Indicators of a second type may be used to indicate whether respective physical addresses of the group of physical addresses store valid data. Data stored at the group of physical addresses may be transferred to a different group of physical addresses based on the indicator of the first type. Also, another indicator of the first type that indicates whether each physical address in the different group of physical addresses stores valid data may be updated.

Techniques for accessing managed NAND

Methods, systems, and devices for enhanced negative acknowledgment control (NAC) frame are described. A device may generate and communicate an enhanced NAC frame that includes additional error information to indicate to the device a cause for the error. The device may receive a data frame and determine an error condition associated with a set of layers of a protocol stack. The device may generate feedback indicating a cause for the determined error condition and transmit the feedback indicating the error cause. The feedback may be a NAC that includes a first quantity of bits configured for indicating an existence of an error and a second quantity of bits configured for indicating the error cause. A format of the NAC frame may include bits configured to identify multiple types of error causes associated with the different layers of the protocol stack.

Enhanced negative acknowledgment control frame

Methods, systems, and devices for unmap backlog in a memory system are described. A memory system may be configured to support receiving an unmap command from a host system and signaling, to the host system, an indication that the unmap command has been processed (e.g., handled, acknowledged). In response to the unmap command, the memory system may proceed with various unmap operations, which may include unmapping at least some of the associated addresses after indicating that the unmap command has been processed. For example, a memory system may implement an unmap backlog table to identify sections of addresses that are to be unmapped (e.g., after indicating that the unmap command has been processed). In some examples, the memory system may support various aspects of prioritization between unmap operations (e.g., background unmap operations) and other access operations such as read operations, write operations, or other access operations.

Unmap backlog in a memory system

Methods, systems, and devices for flexible information compression at a memory system are described. For example, a memory system may compress information in a change log to reduce the frequency of transfers of one or more mappings between volatile memory and non-volatile memory. The memory system may compress information associated with a sequence of sequentially-indexed addresses by storing the information associated with those addresses at a pair of entries in the change log. The memory system may additionally switch between a first operating mode associated with identifying sequentially-indexed addresses and generating compressed entries, and a second operating mode associated with generating entries of the change log for each address received in commands.

Flexible information compression at a memory system

Methods, systems, and devices for dynamic power control are described. In some examples, a memory device may be configured to adjust a first duration for transitioning power modes. For example, the memory device may be configured to operate in a first power mode, a second power mode, and a third power mode. When operating in a second power mode, the memory device may be configured to increase or decrease the first duration for transitioning to a third power mode based on a second duration between received commands. If no commands are received during the first duration, the memory device may transition from the second power mode to the third power mode.

Growing community of inventors

Shanghai, China

Junjun Wang