Tokyo Electron Limited

Tokyo Electron Limi Ted

The University of Texas System

Junjun Liu

Dorel Ioan Toma

Eric M Lee

Hongyu Henry Yue

Dorel L Toma

Jacques Faguet

Ian J Brown

Paul S Ho

Tengfei Jiang

Salomon A Stavchansky

Embodiments of the present disclosure include devices, and methods of making such devices, for delivery of one or more active agents with short or long zero-order release kinetics. Embodiments also include implantable or injectable drug delivery systems capable of controlled release over long periods of time for therapeutic agents.

Fabrication methods for nanodelivery systems for long term controlled delivery of active pharmaceutical ingredients

Methods for cleaning substrates are described including cleaning substrates having hardmask masks and polymer films, such part of semiconductor fabrication. Cleaning methods include ultraviolet (UV) light exposure of process gas mixtures and liquid cleaning chemistries. A substrate and/or process fluids are exposed to ultraviolet radiation. A process gas mixture being irradiated can include an oxidizing gas mixture (air, clean dry air, oxygen, peroxygen, etc.). Reducing gas mixtures, having hydrogen, can also be irradiated. Reactive species from irradiated gas mixtures are exposed to the substrate to chemically modify film properties, such as by facilitating a subsequent liquid cleaning step. Liquid cleaning chemistries on a substrate surface can also be irradiated. Such cleaning techniques enable shorter cleaning times, lower processing temperatures, and reduced damage to underlying or intermediate layers such as dielectric layers.

Method and hardware for enhanced removal of post etch polymer and hardmask removal

A method for preparing a porous dielectric is described. In particular, the method includes removing pore-filling agent from pores in a cured porous dielectric layer, wherein the pore-filling agent was back-filled within the pores following the removal of a pore-forming agent during a curing process. The removal of the pore-filling agent includes heating a substrate holder upon which the substrate rests to a holder temperature greater than 100 degrees C. and less than 400 degrees C., and while heating the substrate holder, exposing the substrate to electromagnetic (EM) radiation, wherein the EM radiation includes emission at a wavelengths within the ultraviolet (UV) spectrum, visible spectrum, infrared (IR) spectrum, or microwave spectrum, or combination thereof.

Method for removing back-filled pore-filling agent from a cured porous dielectric

A multi-step system and method for curing a dielectric film in which the system includes a drying system configured to reduce the amount of contaminants, such as moisture, in the dielectric film. The system further includes a curing system coupled to the drying system, and configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film.

Multi-step system and method for curing a dielectric film

A method for treating a dielectric film on a substrate and, in particular, a method for integrating a low-k dielectric film with subsequently formed metal interconnects is described. The method includes preparing a dielectric film on a substrate, wherein the dielectric film is a low-k dielectric film having a dielectric constant less than or equal to a value of about 4. Thereafter, the method further includes performing a preliminary curing process on the dielectric film, forming a pattern in the dielectric film using a lithographic process and an etching process, removing undesired residues from the substrate, and performing a final curing process on the dielectric film, wherein the final curing process includes irradiating the substrate with ultraviolet (UV) radiation.

Method for integrating low-k dielectrics

A thermal processing system and method for curing a dielectric film. The thermal processing system is configured to treat the dielectric film with ultraviolet (UV) radiation and infrared (IR) radiation in order to cure the dielectric film. The thermal processing system can include an array if IR and UV light-emitting devices (LEDs) configured to irradiate a substrate having a low dielectric constant (low-k) film. The method dries the dielectric film to remove contaminants from the film and exposes the dielectric film at a single stage to ultraviolet radiation and IR radiation.

Thermal processing system for curing dielectric films

A system for curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The system comprises one or more process modules configured for exposing the low-k dielectric film to electromagnetic (EM) radiation, such as infrared (IR) radiation and ultraviolet (UV) radiation.

Dielectric treatment module using scanning IR radiation source

An apparatus for cutting a workpiece using electrochemical etching and a method of using thereof are described. The apparatus includes an electrochemical bath configured to contain an electrochemical solution, a support apparatus configured to support and immerse a workpiece in the electrochemical bath, and a non-contact cutting device configured to extend into the electrochemical bath and slice the workpiece via electrochemical etching along a cutting plane. The apparatus further includes an electromagnetic (EM) radiation source configured to illuminate a cutting surface formed between opposing sidewalls within an evolving cutting groove formed in the workpiece during slicing along the cutting plane.

Electrochemical substrate slicing using electromagnetic wave excitation

A process module for treating a dielectric film and, in particular, a process module for exposing, for example, a low dielectric constant (low-k) dielectric film to ultraviolet (UV) radiation is described. The process module includes a process chamber, a substrate holder coupled to the process chamber and configured to support a substrate, and a radiation source coupled to the process chamber and configured to expose the dielectric film to electromagnetic (EM) radiation. The radiation source includes a UV source, wherein the UV source has a UV lamp, and a reflector for directing reflected UV radiation from the UV lamp to the substrate. The reflector has a dichroic reflector, and a non-absorbing reflector disposed between the UV lamp and the substrate, and configured to reflect UV radiation from the UV lamp towards the dichroic reflector, wherein the non-absorbing reflector substantially prevents direct UV radiation from the UV lamp to the substrate.

Ultraviolet treatment apparatus

A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and adjusting a residual amount of cross-linking inhibitor, such as pore-generating material, within the low-k dielectric film.

Method for removing a pore-generating material from an uncured low-k dielectric film

A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

Method for curing a porous low dielectric constant dielectric film

A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.

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Austin, TX, United States of America

Junjun Liu