Cansemi Technology Inc.

Shenzhen Guoweixin Technology Co., Ltd

Huawei Technologies Co., Limited

Junjie Wang

Chuanting Wang

Mingjian Que

Kaipeng Lin

Yanrong Li

Guoyong Huang

Peixiong Gao

Lei Shao

The present disclosure provides a semiconductor device. The semiconductor device include: a substrate having a STI structure; a first polysilicon structure layer, an isolation dielectric layer, and a second polysilicon structure layer sequentially stacked on the STI structure. The first polysilicon structure layer is undoped polysilicon. The second polysilicon structure layer is heavily boron-doped polysilicon. Contact hole structures are provided on the first polysilicon structure layer for monitoring a target doping concentration of boron during high-concentration boron ion implantation and annealing activation of the second polysilicon structure layer. A fabrication method for the semiconductor device is also provided.

Semiconductor device and fabrication method thereof

The present invention discloses a method and system for processing simulation data. The method includes: simultaneously collecting the simulation waveform data of said multiple FPGAs and adding a time stamp to the waveform data of each FPGA collected in each collection period, and storing the waveform data of the multiple FPGAs in the form of a link list according to the time stamp. The technical solution of the present invention can ensure no disorder of the waveform data of multiple FPGAs.

Method and system for processing simulation data

Growing community of inventors

Guangdong, China

Junjie Wang