Boe Technology Group Co., Ltd.

Chinese Academy of Sciences

Beijing Xiaomi Mobile Software Co., Ltd.

Baidu Online Network Technology (beijing) Co., Ltd.

Junjie Li

Yuanyuan Li

Meizhu Zheng

Huilong Zhu

Chao Zhao

Junfeng Li

Jinbiao Liu

Gang Wang

Haifeng Wang

Hua Wu

Huaxiang Yin

Zhi Hong Li

Peng Cai

Zhongjun He

Ruiqing Zhang

Guilei Wang

Hao Xiong

Qinghua Yang

Xiaobin He

Xiangyang Zhang

Henry H Radamson

Zhenzhen Kong

A Magnetic Random Access Memory (MRAM), a method of manufacturing the same, and an electronic device including the same are provided. The MRAM includes a substrate, an array of memory cells arranged in rows and columns, bit lines, and word lines. The memory cells each include a vertical switch device and a magnetic tunnel junction on the switch device and electrically connected to a first terminal of the switch device. An active region of the switch device at least partially includes a single-crystalline semiconductor material. Each of the memory cell columns is disposed on a corresponding bit line, and a second terminal of each of the respective switch devices in the memory cell column is electrically connected to the corresponding bit line. Each of the word lines is electrically connected to a control terminal of the respective switch devices of the respective memory cells in a corresponding memory cell row.

MRAM, method of manufacturing the same, and electronic device including the MRAM

This disclosure relates to the field of display technologies, and discloses a thin film transistor, a method for fabricating the same, a method for controlling the same, a display panel, and a display device. The thin film transistor includes: a base substrate, a semiconductor active layer on one side of the base substrate, a source electrically connected with one end of the semiconductor active layer, a drain electrically connected with the other end of the semiconductor active layer, a gate insulated from the semiconductor active layer, the source, and the drain, and a modulation electrode insulated from the semiconductor active layer, the gate, the source, and the drain. The modulation electrode is proximate to the drain, and an orthographic projection of the modulation electrode on the base substrate overlaps with an orthographic projection of the semiconductor active layer on the base substrate

Thin film transistor, method for fabricating the same, method for controlling the same, display panel and display device

Embodiments of the present disclosure relate to a method and apparatus for evaluating a translation quality. The method may include: acquiring a to-be-evaluated translation and a reference translation; inputting the to-be-evaluated translation and the reference translation into a pre-trained repetition coding model to obtain a semantic similarity between the to-be-evaluated translation and the reference translation, the repetition coding model being a neural network for calculating a probability of a pair of sentences being repetition sentences; analyzing the to-be-evaluated translation and the reference translation into two syntax trees respectively; calculating a similarity between the two syntax trees as a text similarity between the to-be-evaluated translation and the reference translation; and using a weighted sum of the semantic similarity and the text similarity as a translation quality score.

Method and apparatus for evaluating translation quality

A semiconductor device and a method for manufacturing the semiconductor device. Multiple stacks and an isolation structure among the multiple stacks are formed on a substrate. Each stack includes a first doping layer, a channel layer and a second doping layer. For each stack, the channel layer is laterally etched from at least one sidewall of said stack to form a cavity located between the first doping layer and the second doping layer, and a gate dielectric layer and a gate layer are formed in the cavity. A first sidewall of each stack is contact with the isolation structure, and the at least one sidewall does not include the first side wall. Costly high-precision etching is not necessary, and therefore a device with a small size and a high performance can be achieved with a simple process and a low cost. Diversified device structures can be provided on requirement.

Semiconductor device and method for manufacturing the same

A display panel and a display device are provided. The display panel includes an imaging layer, a pinhole light-shielding layer, a display array layer and a touch layer. The imaging layer, the display array layer and the touch layer are sequentially disposed; the pinhole light-shielding layer is between the imaging layer and the touch layer, and includes light-shielding regions and at least one hole-shaped light-transmitting region that is corresponding to the imaging layer; the display array layer is configured to emit light from a side away from the imaging layer; and the touch layer includes touch mesh patterns formed by conductive wires, and at least one of the touch mesh patterns includes a first mesh corresponding to the hole-shaped light-transmitting region and includes second meshes outside the first mesh, and a size of the first mesh is larger than sizes of the second meshes.

Display panel and display device

A touch module, touch display substrate and touch display device are provided. The touch module includes: a base substrate, and a conductive grid layer and a bridging pattern disposed on the base substrate; the conductive grid layer covers an entire touch area on the base substrate. The conductive grid layer includes a plurality of first touch electrodes and a plurality of second touch electrodes, the first touch electrodes and the second touch electrodes are arranged crosswise and insulated from each other, each of the first touch electrodes includes a plurality of connected first sub-electrodes, and each of the second touch electrodes includes a plurality of independent second sub-electrodes; the bridging pattern and the conductive grid layer are arranged in different layers; and adjacent second sub-electrodes belonging to the same second touch electrode are connected through the bridging pattern.

Touch module, touch display substrate and touch display device

The present application provides a flexible display apparatus. The flexible display apparatus includes a flexible display panel; and a hardness-enhancing layer on the flexible display panel, the hardness-enhancing layer for enhancing surface hardness and mechanical strength of the flexible display panel. The hardness-enhancing layer includes an inorganic material sublayer and a composite material sublayer, the composite material sublayer including a polymer matrix and an inorganic material dispersed in the polymer matrix.

Flexible display apparatus and hardness-enhancing layer for enhancing surface hardness and mechanical strength of flexible display panel

The present disclosure provides a pixel circuit and a driving method thereof, a display device. The pixel circuit includes a reset sub-circuit, a compensation sub-circuit, a data writing sub-circuit, a storage capacitor, a driving transistor, a light emitting control sub-circuit and a light emitting sub-circuit. The compensation sub-circuit may write a threshold voltage of the driving transistor into a gate of the driving transistor in a date writing stage, so that magnitude of a drive current output by the driving transistor is independent of the threshold voltage of the driving transistor in a light emitting stage.

Pixel circuit, driving method thereof and display device

Embodiments of the present disclosure provide a pixel circuitry and a driving method thereof. In the pixel circuitry, the reset circuit provides an initialization signal to a first node and one end of the light emitting device based on a reset signal. The driving transistor provides a driving current based on the voltage of the first node. The data signal write circuit provides a data signal to a third node based on a strobe signal. The compensation circuit couples a second node to the first node based on the strobe signal. The voltage supply circuit provides a first voltage signal to the second node based on a control signal. The control circuit provides a driving current provided by the driving transistor to the light emitting device based on the control signal. The light emitting device emits light according to the driving current.

Pixel circuitry and driving method thereof, array substrate and display device

The disclosure relates to a flexible display substrate including: a flexible base substrate, and a trace layer arranged on the flexible base substrate, wherein the trace layer includes a first trace layer and a second trace layer, an insulating layer is arranged between the first trace layer and the second trace layer, the insulating layer comprises through-holes, the first trace layer and the second trace layer are electrically connected with each other through the through-holes, the first trace layer includes a first trace, and the second trace layer includes a plurality of discrete second traces.

Flexible display substrate

A method for controlling target massage equipment, a device for controlling the target massage equipment, and a non-transitory computer readable storage medium. The method includes obtaining at least one of an arm swing frequency or a total exercise intensity when a user is doing exercise through a wearable device, obtaining exercise information according to the at least one of the arm swing frequency or the total exercise intensity, and controlling the target massage equipment to operate according to the exercise information.

Method and device for controlling target massage equipment

The invention discloses a novel dry etching method, which comprises the following steps: forming a to-be-etched layer on a semiconductor substrate; forming a masking material on the to-be-etched layer; carrying out dry etching on the masking material and the to-be-etched layer; simultaneously carrying out lateral etching (parallel to the surface of the substrate) of a masking layer and longitudinal etching (vertical to the surface of the substrate) of the to-be-etched layer; and obtaining the inclination angle (the included angle between a slope surface and the surface of the substrate) of the corresponding etched slope surface by accurately controlling the speed ratio. The method can flexibly adjust the inclination angle of the etched slope surface within a large range (0-90 degrees), and especially has advantages in the field of the application with a small inclination angle (smaller than 20 degrees) of the etched slope surface in comparison with a conventional etching method.

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Beijing, China

Junjie Li