The Furukawa Electric Co., Ltd.

Mahle Filter Systems Japan Corporation

Honda Motor Co., Ltd.

Nissan Motor Company Limited

Mahle International Gmbh

Advanced Telecommunications Research Institute International

The Furukawa Manufacturing Co., Ltd.

Junji Yoshida

Naoki Tsukiji

Satoshi Irino

Taketsugu Sawamura

Hirokazu Itoh

Yuichiro Irie

Toshio Kimura

Masaki Funabashi

Takeshi Aikiyo

Noriyuki Yokouchi

Tsuyoshi Wakisaka

Akihiko Kasukawa

Yutaka Ohki

Hidehiro Taniguchi

Masashi Nakae

Hiroshi Shimizu

Hideaki Hasegawa

Shu Namiki

Hiroshi Matsuura

Takeo Shimizu

Tomoaki Toratani

Takeharu Yamaguchi

Toshiro Yamamoto

Mieko Konishi

Satoshi Koyanagi

Nobumasa Tanaka

Naoki Kimura

Yoshihiro Emori

Michio Ohkubo

Keishi Takaki

Yutaka Oki

Akira Itoh

Kazuaki Kiyota

Tsuyoshi Saito

Kazuaki Nishikata

Yoshikazu Ikegami

Jun Niekawa

Takeshi Namegaya

Takashi Koseki

Naoki Hayamizu

Ryuichiro Minato

Masashi Shinada

Keiichi Yabusaki

Katsuhisa Ohta

Yoshinori Yakabe

Taisuke Sakakibara

Shigehiro Yokoya

Takahisa Harayama

Kohei Tsunetomo

Takehiro Fukushima

Shuichi Tamura

Yasuharu Bono

Masayoshi Seki

Noritake Ito

Mihiro Kataoka

Akira Iketani

Taichi Sasaki

Masako Kobayakawa

Satoru Ishizuna

Hiroaki Suzuki

Hiroyuki Kawamura

Isao Nakata

Michie Hirane

Sadaichi Takamatsu

Jun Noguthi

Kyouji Hanada

Harunobu Ikeda

Keizou Inagaki

Morito Matsuoka

Souko Kado

Kouhei Terada

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The optical semiconductor device is applied to a ridge-stripe type laser.

Wavelength-variable laser

An optical semiconductor device outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The optical semiconductor device includes a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer. The optical semiconductor device further includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The quantum well active layer is doped with 0.3 to 1&#xd7;10/cmof n-type impurity.

An air cleaner may include a filter element and a housing defining an inner space. The inner space may be divided by the filter element into a dust-side air chamber on an upstream side and a clean-side air chamber on a downstream side. Air introduced into the housing may be dischargable via an outlet pipe, to which an air flow sensor is attachable, connected to the clean-side air chamber. The outlet pipe may extend in a direction different from a normal to the filter element. A plurality of ribs may be disposed on an inner surface of a clean-side portion of the housing that defines the clean-side air chamber. The plurality of ribs may extend from a corner portion of the housing toward the filter element and the outlet pipe. A distance between adjacent ribs of the plurality of ribs may decrease in a direction toward the outlet pipe.

Air cleaner

A semiconductor laser array includes: a plurality of semiconductor lasers configured to oscillate in a single mode at oscillation wavelengths different from one another, each semiconductor laser including an active layer including a multi-quantum well structure including a plurality of will layers and a plurality of barrier layers laminated alternately, and an n-side separate confinement heterostructure layer and p-side separate confinement heterostructure layer configured to sandwich the active layer therebetween in a thickness direction, band gap energies of the n-side separate confinement heterostructure layer and the p-side separate confinement heterostructure layer being greater than band gap energies of the barrier layers of the active layer. The active layer is doped with an n-type impurity.

Semiconductor laser array, semiconductor laser element, semiconductor laser module, and wavelength-variable laser assembly

A constant velocity joint includes spherical rollers. At least parts of first inner bottom wall portions provided on an inner bottom wall surface of a cylindrical portion of the constant velocity joint are located in closer proximity to the side of an opening of the cylindrical portion than second inner bottom wall portions. When the spherical rollers are disposed at an innermost location inside the cylindrical portion and the axial directions of the spherical rollers are perpendicular to the axial direction of the cylindrical portion, at least parts of the first inner bottom wall portions abut against inner side outer circumferential surface portions of the spherical rollers, and the second inner bottom wall portions are separated away from outer side outer circumferential surface portions of the spherical rollers.

Constant velocity joint and assembly method therefor

A circuit conductor is provided on a base. A semiconductor laser is connected to the circuit conductor. Cutout parts on which the circuit conductor is not formed are provided at, for example, the vicinity of the four corners of the base, and a hole is provided at each of the said portions. The holes penetrate the base. Fixing members are inserted through the holes. The fixing members are, for example, male threads. Since the head part of the fixing members is located in the cutout part, the fixing members and the circuit conductor are not in contact with each other. A platform has holes formed at portions corresponding to the holes in the optical unit and female threads formed on the inner surface. The fixing members and the platform are therefore joined. As a result, the optical unit is fixed to the platform.

Optical unit, fixing mechanism for optical unit, and semiconductor laser module

A distributed feedback (DFB) laser outputting a predetermined wavelength of laser light includes a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction. The DFB laser includes a separate confinement heterostructure layer positioned between the quantum well active layer and then-type cladding layer. The DFB laser includes an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and then-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer. The DFB laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser.

A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

Optical semiconductor device, semiconductor laser module, and optical fiber amplifier

A method of designing a semiconductor laser device includes: controlling a distance between the output-side reflection unit and the second reflection unit and an effective optical feedback &#x3ba; to the semiconductor laser element, the effective optical feedback &#x3ba; defined by a below-presented formula (1) including a circulating time &#x3c4; of the light in the semiconductor laser element, a reflectivity Rof the output-side reflection unit, and a reflectivity Rof the second reflection unit; selecting a semiconductor laser device in which an LFF period is equal to or smaller than 20 ns as a semiconductor laser device in which high speed switching occurs between an FBG mode and an FP mode; and using the selected semiconductor laser device as an semiconductor laser device oscillating in a coherent collapse mode.&#x3ba;=(1/&#x3c4;)&#xd7;(1&#x2212;)&#xd7;()&#x2003;&#x2003;(1)

Method of designing semiconductor laser device, method of designing raman amplifier, methods of manufacturing semiconductor laser device, semiconductor laser device, raman amplifier, and optical communication system

It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth.

Semiconductor optical amplifier

Growing community of inventors

Tokyo, Japan

Junji Yoshida