Sanyo Electric Co., Ltd.

Junji Yamada

Yutaka Yamada

Junichi Ariyoshi

Toshimitsu Taniguchi

Shinya Mori

Shuichi Takahashi

Fumiko Shikakura

The method of manufacturing a semiconductor device comprises the steps of: forming a gate electrode on a semiconductor substrate through a gate insulated film; forming source/drain regions to be adjacent to the gate electrode forming an Al wiring through an interlayer insulating film covering the gate electrode; and implanting impurity ions into a surface of the semiconductor substrate using as a mask the Al wiring and a photoresist formed thereon, thereby writing information into each of elements constituting a mask ROM and changing an outputting manner at an output port.

Method of manufacturing semiconductor device

A nonvolatile semiconductor memory device includes a plurality of memory transistors, a plurality of insulating layers disposed over the transistors, and a plurality of metal layers. Each of the metal layers is disposed on one of the insulating layers. The device also includes a plurality of metal plugs disposed over corresponding memory transistors. Each of the metal plugs filling in a contact hole formed in one of the insulating layers and electrically connecting the metal layers disposed on a top side and a bottom side of the corresponding insulating layer. A top metal layer of the plurality of metal layers is configured to provide bit lines that correspond to the memory transistors, the metal plugs are vertically aligned, and one of the insulating layers is configured so that whether one of the memory transistors is connected to a corresponding bit line is determined by whether a metal plug corresponding to the memory transistor exists in the insulating layer.

Nonvolatile semiconductor memory device

A semiconductor device includes: a gate electrode on a semiconductor substrate through a gate insulated film; source/drain regions to be adjacent to said gate electrode; and an Al wiring through an interlayer insulating film covering said gate electrode, wherein impurity ions are implanted into a surface of said semiconductor substrate using as a mask said Al wiring, and a protection film is formed on the Al wiring so that the Al wiring is not exposed when said interlayer insulating film is etched.

Semiconductor device and manufacturing method thereof

Disclosed is a method of manufacturing a semiconductor device including a gate electrode on a semiconductor substrate through a gate insulated film; source/drain regions formed to be adjacent to the gate electrode; and an Al wiring formed through an interlayer insulating film covering the gate electrode, wherein impurity ions are implanted in a surface layer of the substrate using the Al wiring and a photoresist formed thereon as a mask, and wherein no photoresist is formed on the Al wiring arranged above regions in which the impurity ions are implanted in adjacent elements.

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Gunma, Japan

Junji Yamada