Mitsubishi Denki Kabushiki Kaisha

Elpida Memory, Inc.

Kabushiki Kaisha Toshiba

Mitsubishi Electric Corporation

Other

Toshiba Tec Kabushiki Kaisha

Daiwa Can Company

Junji Yamada

Hiroaki Ikeda

Seiji Saiki

Kayoko Shibata

Hitoshi Miwa

Yoshihiko Inoue

Masafumi Matsumoto

Masaru Furukawa

Tatsuya Iwasa

Tatsuya Ijima

Toshio Iwata

Atsushi Ueda

Yoichiro Inoue

Masakzau Ishino

A semiconductor device includes a thermoplastic resin case, a semiconductor chip mounted within the thermoplastic resin case, a metal terminal having a wire bonding surface and an opposing contact surface, and a wire connected between the wire bonding surface and the semiconductor chip. The contact surface of the metal terminal is thermoplastically bonded at an area to the inside of the thermoplastic resin case.

Resin sealed semiconductor device and manufacturing method therefor

A stacked type semiconductor memory device of having a structure in which a plurality of semiconductor chips is stacked and a desired semiconductor chip can be selected by assigning a plurality of chip identification numbers different from each other are individually assigned to the plurality of semiconductor chips comprising: a plurality of operation circuits which is connected in cascade in a stacking order of the plurality of semiconductor chips and outputs the plurality of identification numbers different from each other by performing a predetermined operation; and a plurality of comparison circuits which detects whether or not each the identification number and a chip selection address commonly connected to each the semiconductor chip are equal to each other by comparing them.

Stacked type semiconductor memory device and chip selection circuit

A semiconductor memory device is constituted of a plurality of fuses (or anti-fuses) used for internal voltage adjustment or timing adjustment after manufacturing, a selector for sequentially selecting the fuses, and a single-direction latch circuit for latching a fuse breakdown determination result which is produced by determining whether or not each fuse selected by the selector is broken down and which is varied in a single direction from the low level to the high level or in a single direction from the high level to the low level. The semiconductor memory device allows the fuse breakdown determination to progress with a high reliability by use of a relatively small chip area and to cope with a failure in which one or more fuses are accidentally short-circuited to an unwanted potential.

Semiconductor memory device

An electric power semiconductor device including first and second circuit patterns formed on main surfaces of first and second insulating substrates, respectively, first and second semiconductor chips mounted on the first and second circuit patterns, respectively, a multilayer electrode plate assembly disposed between the first and second insulating substrates, having first, second and third electrode terminals provided with a distance from each other, a first connecting conductor made by wire bonding for connecting the first and second semiconductor chips to the first and second electrode terminals, and a second connecting conductor having an extending portion extended from a part of the third electrode terminal to be connected to the second circuit pattern, and the connection between the extending portion of the third electrode terminal and the second circuit pattern is implemented by a solder.

Electric power semiconductor device

A semiconductor device including: an insulating substrate including a ceramic substrate having first and second principal surfaces, a first metallic conductor fixed on the first principal surface, and a second metallic conductor fixed on the second principal surface; a semiconductor element disposed on the first metallic conductor on the first principal surface; and a base plate connected to the second metallic conductor on the second principal surface, and on which the insulating substrate being disposed. The second metallic conductor includes a joint area connected to the second principal surface, and a non-joint area formed around the joint area.

Semiconductor device and insulating substrate utilizing a second conductor with a non-joint area

In a three-dimensional stacked memory having through electrodes, no optimal layer arrangement, bank arrangement, control methods have been established, and thus optimal methods are desired to be established. A stacked memory includes memory core layers, an interposer, and an IF chip. By stacking memory core layers having the same arrangement, it is possible to cope with both of no-parity operation and parity operation. Further, bank designation irrespective of the number of stacks of the memory core layers can be achieved by assignment of a row address and a bank address. Further, the IF chip has refresh counters for performing a refresh control of the stacked memory. This arrangement provides a stacked memory including stacked memory core layers having through electrodes.

Memory bank arrangement for stacked memory

A power semiconductor module comprising: a power semiconductor element; a case for receiving the power semiconductor element; a control terminal which is connected to a control electrode of the power semiconductor element, the control terminal is installed in a state of protruding from an upper surface of the case; and a conductive spring which is inserted into the control terminal so that an inner surface of the spring makes contact with at least a part of the side surface of the control terminal, the conductive spring is electrically connected to a printed substrate placed as opposed to the upper surface of the case by making pressurization contact with the printed substrate.

Power semiconductor module

An image forming processing circuit and an image forming apparatus having a clock stop function of the invention perform, in an image forming processing process, supply of a clock for processing only in a period in which the clock is required and stop the supply of the clock for processing in a period in which the clock for processing is not required. An ASIC itself realizes a low power consumption function (a clock stop function) without requiring control from a CPU or the like as in the conventional sleep function. Thus, it is possible to effectively reduce power consumption of the ASIC compared with that in the past.

Image forming processing circuit and image forming apparatus

A stacked semiconductor device includes an interposer substrate having external power supply terminals, and semiconductor chips stacked on the interposer substrate. A power supply wiring arranged in the semiconductor chip located in the bottom layer is connected to the external power supply terminal via a bump electrode, the power supply wiring arranged in the semiconductor chip located in the top layer is connected to the external power supply terminal via a bonding wire, and the power supply wirings each arranged in adjacent semiconductor chips are mutually connected via the through electrode. Such a loop structure can solve a problem such that the higher the semiconductor chip, the larger its voltage drop.

Stacked semiconductor device

In a laminated memory, each of memory core layers includes a delay circuit having a period of delay time corresponding to a period of operation time of an internal memory circuit portion thereof. A memory core layer, which is input with a simultaneous operation signal, operates in response to the input operation signal. The delay circuit includes an autonomically and sequentially activating function for sending an operation signal to a next stage after the period of delay time passes.

Laminated memory having autonomically and sequentially activating operation

Semiconductor chips are connected to electrode terminals () by wire bonding, and connecting conductors connect extending portions () extending from a part of the electrode terminals () to the circuit patterns () by soldering, and thus the wire bonding points of the electrode terminals are reduced to thereby reduce an electric resistance and suppress heat generation and voltage drop.

One processing sectionexecutes a process of generating image data K representing a black image on the basis of the image data Y, M, and C, and sequentially executes a process of removing elements of the black image contained in the image data Y, from the image data Y, a process of removing the elements of the black image contained in the image data M, from the image data M, and a process of removing the elements of the black image contained in the image data C, from the image data C.

Growing community of inventors

Tokyo, Japan

Junji Yamada