Adeka Corporation

Samsung Electronics Co., Ltd.

Junji Ueyama

Hiroki Sato

Atsushi Sakurai

Youn-Joung Cho

Tomoharu Yoshino

Jung-sik Choi

Haruyoshi Sato

Kyoo-Chul Cho

Atsuya Yoshinaka

Senji Wada

Masako Shimizu

Jin-Seo Lee

In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, Rthough Reach represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and Rrepresents a linear or branched alkyl group having 1 to 8 carbon atoms).

Molybdenum imide compound

In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound. (In the formula, Rthough Reach represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and Rrepresents a linear or branched alkyl group having 1 to 8 carbon atoms.)

Thin-film-forming material including a molybdenum imide compound

Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, Rand Reach represents a straight or branched alkyl group having 1 to 4 carbon atom(s), Rrepresents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein Rand Rthat are plurally present may be the same or different. 

Method for manufacturing molybdenum oxide-containing thin film

In the method of the present invention for producing a thin film, including introducing, onto a substrate, a vapor that has been obtained by vaporizing a thin-film-forming material including a molybdenum imide compound represented by the following formula (I) and that includes the molybdenum imide compound; and then forming a thin film including molybdenum on the substrate by decomposing and/or chemically reacting the molybdenum imide compound.  (In the formula, Rthough Reach represent a hydrogen atom or a linear or branched alkyl group having 1 to 5 carbon atoms, and Rrepresents a linear or branched alkyl group having 1 to 8 carbon atoms.)

Method for producing thin film containing molybdenum

The &#x3b2;-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the &#x3b2;-ketoimine ligand. A method of forming the &#x3b2;-ketoimine ligand and a method of forming a thin film using the metal complex compound including &#x3b2;-ketoimine ligand are provided.

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Tokyo, Japan

Junji Ueyama