Sanyo Electric Co., Ltd.

Tokyo Sanyo Electric Co.

Junji Sakamoto

Eiju Maehara

Noriaki Sakamoto

Yoshiyuki Kobayashi

Kouji Takahashi

Yusuke Igarashi

Yukio Okada

Katsumi Okawa

Shigeaki Mashimo

Hiroyasu Kishi

Takeshi Nakamura

Hirokazu Fukuda

Noboru Usui

Hiroki Etou

Sadao Kondou

A semiconductor device is provided wherein conductive paths, formed of crystal that grows better along the X-Y axis than along the Z axis, are embedded in an insulating resin, and the back surface of the conductive pathis exposed through the insulating resinand sealed. With this arrangement, fractures of the conductive pathsembedded in the insulating resinare suppressed.

Semiconductor device and semiconductor module

In the present invention there is formed a sheet-like board memberhaving conductive coating films, such as first padsand die pads, formed thereon or a sheet-like board memberwhich has been half-etched by using conductive coating films such as first padsand die pads. A hybrid IC can be manufactured by means of utilization of post-processing processes of a semiconductor manufacturer. Further, a hybrid IC can be manufactured without adoption of a support board, and hence there can be manufactured a hybrid IC which is of lower profile and has superior heat dissipation characteristics.

Sheet-like board member and method of manufacturing a semiconductor device

Hybrid integrated circuit device

A method of manufacturing a semiconductor device is described. A board that includes a flat back face, corresponding to a resin sealing area, and a front face that has projections is provided. The projections are formed of a metal that is integral with the board and include (a) a bonding pad provided in an area surrounded by an area that contacts an upper die, (b) a wiring that is integrated with the bonding pad and which extends to a semiconductor element mounting area, and (c) an electrode provided in one body with the wiring. A semiconductor element is mounted on the semiconductor element area and electrically connected to the bonding pad. The board is placed on a lower die and resin is filled into a space formed by the board and upper die. The board is divided into multiple devices such that the projections are separated by removing the board exposed at the back face of the resin.

Board for manufacturing a BGA and method of manufacturing semiconductor device using thereof

After a trenchis formed in a conductive foil, the circuit elements are mounted, and the insulating resin is applied on the conductive foilas the support substrate. After being inverted, the conductive foilis polished on the insulating resinas the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive pathsand the circuit elementsare supported by the insulating resin, without the use of the support substrate. And the interconnects Lto Lrequisite for the circuit are formed, and can be prevented from slipping because of the curved structureand a visor

Circuit device and manufacturing method of circuit device

After a trenchis formed in a conductive foil, the circuit elements are mounted, and the insulating resin is applied on the conductive foilas the support substrate. After being inverted, the conductive foilis polished on the insulating resinas the support substrate for separation into the conductive paths. Accordingly, it is possible to fabricate the circuit device in which the conductive pathsand the circuit elementsare supported by the insulating resinwithout the use of the support substrate. And the interconnects Lto Lrequisite for the circuit are formed, and can be prevented from slipping because of the curved structureand a visor

Circuit device and manufacturing method of circuit device and semiconductor module

A method of manufacturing a System In Package (SIP) or Integrated System in Board (ISB) circuit device in which a plurality of circuit elements are covered with and integrally supported by an insulating resin. A user terminal is connected with an ISB server and an ISB mounting factory through a communication network. Specifications to be satisfied by an ISB circuit device desired by a user, such as an external size and terminal information of the ISB and circuit diagram CAD data, for example, are input through the user terminal and transmitted to the ISB server. The ISB server in turn transmits information concerning the due date and cost of the ISB circuit device and also a reliability evaluation result to the user terminal. The ISB server also generates mask data for manufacturing the ISB circuit device based on the input specifications, and transmits the mask data to the ISB mounting factory. The ISB mounting factory, receiving the manufacturing data from the ISB server, manufactures the ISB circuit device and provides the ISB circuit device to the user.

Method of manufacturing circuit device using a communication network

A device containing a flat member is provided, having a pattern for a bonding pad, a wiring, and an electrode, by half-etching through the flat member.

A heat radiation electrode () is exposed from the back surface of an insulating resin (), and a metal plate () is affixed to this heat radiation electrode (). The back surface of this metal plate () and the back surface of a first supporting member () are substantially within a same plane, so that it is readily affixed to a second supporting member (). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (), the metal plate () and the second supporting member ().

Semiconductor device, semiconductor module and hard disk

AS conductive patternsA toD are formed burying in a insulating resinand a conductive foilis formed being half-etched, thickness of the device is made thin. As an electrode for radiationD is provided, a semiconductor device superior in radiation is provided.

Semiconductor device with under-fill material below a surface of a semiconductor chip

The back surface of a semiconductor chip () is exposed from the back surface of an insulating resin (), and a metal plate () is affixed to this semiconductor chip (). The back surface of this metal plate () and the back surface of a first supporting member () are substantially within a same plane, so that it is readily affixed to a second supporting member (). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the metal plate () and the second supporting member ().

As conductive patternsA toD are formed burying in a insulating resinand a conductive foilis formed being half-etched, thickness of the device is made thin. As an electrode for radiationD is provided, a semiconductor device superior in radiation is provided.

Semiconductor device and method of manufacturing the same

A heat radiation electrode () is exposed from the back surface of an insulating resin (), and a metal plate () is affixed to this heat radiation electrode (). The back surface of this metal plate () and the back surface of a flexible sheet become substantially within a same plane, so that it is readily affixed to a second supporting member (). In addition, the top surface of the heat radiation electrode () is made protrusive beyond the top surfaces of the pads () to reduce the distance between the semiconductor chip () and the heat radiation electrode (). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (), the metal plate () and the second supporting member ().

A conductive pattern of a first layer isolated by an isolation trench is formed on a conductive foil, and a plurality of layers of the conductive patterns are formed thereon to create a multilayered wiring structure, and furthermore, a circuit element is mounted and molded with an insulating resin and the back surface of the conductive foil is etched. It is possible to implement a method of manufacturing a circuit device which provides very power saving and is suitable for mass production, then the circuit device having conductive patterns of a multilayered structure are provided.

Method of manufacturing circuit device

A first metal film made of a Cu plated film is formed on a radiation substrate A made of Al, and an island exposed from a back surface of a semiconductor device is adhered thereto. At that time, the back surface of the semiconductor device is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device . Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device . In addition, the heat generated from semiconductor elements can be radiated excellently from the island via a second supporting member A.

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Gunma, Japan

Junji Sakamoto