Denso Corporation

Junji Oohara

Yukihiro Takeuchi

Kazuhiko Kano

Hiroshi Muto

Tsuyoshi Fukada

Toshiyuki Morishita

Kazushi Asami

Minekazu Sakai

Kenichi Ao

Shinji Yoshihara

Yoshitaka Noda

Kazuhiko Sugiura

Yasuhiro Kitamura

Hisaya Katoh

Yukihiko Takeuchi

In a manufacturing method for a semiconductor device having a coil layer part on a substrate, two support substrates each having a flat surface are prepared, and a component member is formed on the flat surface of each of the support substrates. The component member includes a wiring portion having a predetermined pattern and an insulation film surrounding the wiring portion. The wiring portion is provided with a connecting portion exposing from the insulation film. A coil layer part is formed by opposing and bonding the component members formed on the support substrates to each other while applying pressure in a condition where the flat surfaces of the support substrates are parallel to each other. A coil is formed in the coil layer part by connecting the wiring portions through the connecting portions.

Semiconductor device capable of restricting coil extension direction and manufacturing method thereof

In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width.

Semiconductor device manufacturing method

A method of manufacturing an optical device includes: a first step of forming an optical-device forming body that includes a plurality of columnar structures arranged in an arrangement direction on a substrate surface via a trench and an outline structure connected to and containing therein the plurality of columnar structures; a second step of oxidizing the optical-device forming body from a state where the optical-device forming body starts to be oxidized to a state where the columnar structure is oxidized; and a third step in which an unoxidized residual part of the outline structure in the second step is oxidized after the second step so as to form an oxidized body. Furthermore, the third step includes restraining the outline structure from being deformed with respect to at least the arrangement direction of the columnar structures in the third step.

Method of manufacturing the optical device by a stopper to form an oxide block

An optical device includes a silicon substrate, and multiple columnar members. The columnar members are integrally formed with the silicon substrate and stand on a top surface of the silicon substrate. The columnar members are made of silicon oxide. Light enters the columnar members in a first direction and propagates through the columnar members in a second direction. The columnar members extend in a third direction. The columnar members are arranged with a gap in the second direction. The second direction is perpendicular to the third direction. An angle between the first and third directions is greater than a critical angle and equal to or less than 90 degrees.

Optical device

A method for manufacturing an optical device having an optical block, through which a light is transmitted, is provided. The method includes steps of: forming a plurality of silicon oxide members, which is disposed on a silicon substrate, wherein the silicon oxide members are arranged in parallel each other by a predetermined clearance between two adjacent silicon oxide members; and pouring a super critical fluid into the clearance so that the clearance is filled with a product formed from a predetermined compound for forming the optical block, wherein the predetermined compound is dissolved in the super critical fluid.

Method for manufacturing optical device

A method for manufacturing a physical quantity sensor having a movable portion, a support portion and an optical part is provided. The method includes steps of: etching a silicon substrate so that a movable-portion-to-be-formed portion, a support-portion-to-be-formed portion, and an optical-part-to-be-formed portion having a plurality of columns and trenches are formed; oxidizing the optical-part-to-be-formed portion so that each column changes to a silicon oxide column and the trench is filled with a silicon oxide layer; and removing a part of the movable-portion-to-be-formed portion connecting to the silicon substrate so that the movable portion is separated from the silicon substrate.

Physical quantity sensor having optical part and method for manufacturing the same

An optical device includes a semiconductor substrate and an optical part having a plurality of columnar members disposed on the substrate. Each columnar member is disposed in a standing manner and adhered each other so that the optical part is provided. The optical part is integrated with the substrate. This optical part has high design freedom.

Optical device having micro lens array

A method for manufacturing an optical device is provided. The device includes an optical waveguide path having a Bragg grating and a movable portion disposed near the Bragg grating. A displacement of the movable portion provides a change of spacing of the Bragg grating so that a light passing through the optical waveguide path is changed. The optical device detects the physical quantity based on a change of the light. The method includes steps of: forming the optical waveguide path with the Bragg grating on a first part of a silicon substrate; and forming the movable portion on a second part of the silicon substrate.

Optical device and method for manufacturing the same

A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

Method for manufacturing movable portion of semiconductor device

An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as WThe cavity has a width defined as WA ratio of W/Wbecomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen &#x3bc;m easily. Therefore, connection loss between a light source and the device is reduced.

Optical device having optical waveguide and method for manufacturing the same

Optical device having micro lens array and method for manufacturing the same

A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer such that the insulating layer is located between the semiconductor layer and the semiconductor substrate. The method further includes a step of dry etching the semiconductor layer to form a trench with a charge prevented from building up on a surface of the insulating layer that is exposed at a bottom of the trench during the dry etching. The method further includes a step of dry etching a sidewall defining the trench at a portion adjacent to the bottom of the trench to form the movable unit. The later dry etching is performed with a charge building up on the surface of the insulating layer such that etching ions strike to etch the portion of the sidewall.

Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

Method of manufacturing semiconductor device capable of sensing dynamic quantity

A method for manufacturing a semiconductor device having a movable unit includes a step of forming an SOI substrate that includes a semiconductor substrate, an insulating layer, and a semiconductor layer. The method further includes a step of dry etching the semiconductor layer to form a trench and a step of dry etching a sidewall defining the trench at a portion adjacent to a bottom of the trench to form the movable unit. The later dry etching is implemented with a charge building up on a surface of the insulating layer that is exposed during the former dry etching to etch the portion. In addition, the later dry etching is implemented at an etching rate higher than that at which the former dry etching is implemented to reduce the deposition amount of a protection film deposited on a reverse side of the movable unit during the later dry etching.

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Nisshin, Japan

Junji Oohara