Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Mirise Technologies Corporation

Hamamatsu-photonics K.k.

National University Corporation Tokai National Higher Education and Research System

Flosfia Inc.

Junji Ohara

Kazuhiko Kano

Daisuke Kawaguchi

Nobuyuki Ohya

Masatake Nagaya

Shoichi Onda

Jun Kojima

Masahiro Sugimoto

Toshimasa Yamamoto

Yukihiro Takeuchi

Takashi Shinohe

Shinji Yoshihara

Isao Takahashi

Akihiko Teshigahara

Hiroaki Fujibayashi

Tetsuo Yoshioka

Fusao Hirose

Chiaki Sasaoka

Hideo Matsuki

Hideyuki Uehigashi

Yoshitaka Nagasato

Takashi Kanemura

Shinichi Hoshi

Takashi Ishida

Keisuke Hara

Tatsuya Toriyama

Hiroki Watanabe

A semiconductor chip includes a chip-constituting substrate having one surface, the other surface opposite to the one surface, and two pairs of opposing side surfaces connecting the one surface and the other surface. The one surface and the other surface are along one of a {c-plane, a {-m-plane, and a {-a-plane. One of the two pairs of opposing side surfaces is along another one of the {c-plane, the {-m-plane, and the {-a-plane. The other of the two pairs of opposing side surfaces is along the other of the {c-plane, the {-m-plane, and the {-a-plane. The side surface includes an altered layer containing gallium oxide and gallium metal in a surface layer portion in a depth direction which is a normal direction to the side surface.

Semiconductor chip and method for manufacturing the same

A method for manufacturing a semiconductor device includes: preparing a processed wafer having a gallium nitride (GaN) wafer and an epitaxial layer on the GaN wafer; forming a device constituent part in a portion of the processes wafer adjacent to a front surface provided by the epitaxial layer; forming a modified layer inside of the processed wafer by applying a laser beam from a back surface side opposite to the front surface side; and dividing the processed wafer at the modified layer. The processed wafer prepared includes a reflective layer for reflecting the laser beam at a position separated from a planned formation position, where the modified layer is to be formed, by a predetermined distance toward the front surface side. The reflective layer contains a layer having a refractive index different from that of a GaN single crystal of an epitaxial layer.

Method for manufacturing semiconductor device, and semiconductor wafer

A silicon carbide wafer includes a base wafer that is made of silicon carbide and doped with an n-type impurity, and an epitaxial layer that is arranged on a main surface of the base wafer, made of silicon carbide and doped with an n-type impurity. The base wafer has a thickness t1 and an average impurity concentration n1, and the epitaxial layer has a thickness t2 and an average impurity concentration n2. The base wafer and the epitaxial layer are configured so as to satisfy a mathematical formula 1:−0.0178<0.012+(2/1)×0.057−(2/1)×0.029−{(2/1)−0.273}×{(2/1)−0.685}×0.108<0.0178.  [Formula 1]

Silicon carbide wafer and method for manufacturing the same

A crystalline oxide semiconductor with excellent crystalline qualities that is useful for semiconductors requiring heat dissipation is provided. A crystalline oxide semiconductor including a first crystal axis, a second crystal axis, a first side, and a second side that is shorter than the first side, a linear thermal expansion coefficient of the first crystal axis is smaller than a linear thermal expansion coefficient of the second crystal axis, a direction of the first side is parallel and/or substantially parallel to a direction of the first crystal axis, and a direction of the second side is parallel and/or substantially parallel to a direction of the second crystal axis.

Crystalline oxide semiconductor

A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

Capacitance type physical quantity sensor

A semiconductor physical quantity sensor, in which a beam-structure having a movable electrode and a fixed electrode confronted with the movable electrode are integrally formed in one substrate, having a new electric isolation structure. A semiconductor physical quantity sensor such as an acceleration sensor includes a silicon substrate; a laterally extending hollow formed in the silicon substrate; and a base plate portion defined below the hollow in the silicon substrate. A rectangular frame portion, a beam-structure having a movable electrode, and a fixed electrode is defined by the hollow and trenches. The fixed electrode confronts with the movable electrodes of the beam-structure. Trenches, in which electrical insulating material is buried, are formed between the movable electrode and the rectangular frame portion and between the fixed electrodes and the rectangular frame portion.

Semiconductor physical quantity sensor and method of manufacturing the same

A method of manufacturing a semiconductor device, which can effectively form a trench having a high aspect ratio with relatively simple steps. An initial trench is formed in a silicon substrate by a reactive ion etching using an oxide film mask as an etching mask. After forming a protection oxide film on an inside surface of the trench, a part of the protection oxide film at which positions at a bottom surface of the trench is removed by a reactive ion etching, so that an etching of the silicon substrate is advanced through the bottom surface of the trench. Furthermore, the step for forming the protection oxide film and the step for re-etching the bottom surface of the trench are repeatedly performed, so that a depth of the trench becomes a predetermined depth. These steps are performed in a common chamber by using plasma processed with switching gases to be introduced to the chamber.

Method for manufacturing semiconductor device

Growing community of inventors

Nisshin, Japan

Junji Ohara