Sumitomo Chemical Company, Limited

Junji Nakanishi

Masako Sugihara

Takashi Nishimura

Maki Kawamura

Yasunori Uetani

Yoshiyuki Takata

Katsuhiko Namba

The present invention provides a resist composition which has sufficient resistant to a plating treatment and is capable of forming a resist pattern with high accuracy. The present invention also provides a method for producing a resist pattern using the resist composition, and a method for producing a plated molded article using the resist pattern. The present invention relates to a resist composition comprising a compound (I) having a quinone diazide sulfonyl group, a resin comprising a structural unit having an acid-labile group (A1), an alkali-soluble resin (A2) and an acid generator (B); a method for producing a resist pattern using the resist composition; and a method for producing a plated molded article using the resist pattern.

Resist composition and method for producing resist pattern, and method for producing plated molded article

A resist composition contains: a resin having a structural unit represented by formula (I), an alkali-soluble resin, an acid generator, and a solvent: wherein Rrepresents a hydrogen atom or a methyl group, Rand Reach independently represent a hydrogen atom or a Cto Chydrocarbon group, Rrepresents a Cto Calicyclic hydrocarbon group, Rrepresents a Cto Calkyl group or a Cto Calkoxy group, and 'p' represents an integer of 0 to 4.

Resist composition and method for producing resist pattern

A resist composition contains: a resin having an acid-labile group, an acid generator, a compound having two or more phenolic-hydroxy groups and being other than a resin, and a solvent. The resist composition of the disclosure can provide a resist pattern showing excellent shape and detachability, therefore, the present resist composition can be used for semiconductor microfabrication with resist patterns showing excellent shape.

Photoresist composition

A chemical amplified photoresist composition containing a resin, an acid generator, and a compound of formula (X): wherein R, R, R, R, Rand Reach independently represent a hydrogen atom, a hydroxyl group, a carboxy group, &#x2014;SO, &#x2014;NH, a halogen atom, a mercapto group, a C1-C12 alkyl group optionally having a substituent, a C6-C30 aryl group optionally having a substituent, a C3-C12 cycloalkyl group optionally having a substituent, and Rand Reach independently represent a hydrogen atom, a hydroxyl group, a carboxy group, &#x2014;SO, &#x2014;NH, a halogen atom, a mercapto group, a C1-C12 alkyl group optionally having a substituent, a C6-C30 aryl group optionally having a substituent, or a C3-C12 cycloalkyl group optionally having a substituent, or Rand Rare bonded each other to form a ring together with carbon atoms binding Rand Rand with the carbon atoms forming the bond between the pyridine rings.

Chemical amplified photoresist composition

A chemical amplifying type positive resist composition having excellent sensitivity and resolution, manifesting no generation of scum is provided, which comprises a resin which has a polymerization unit derived from hydroxystyrene and a polymerization unit derived from 2-ethyl-2-adamantyl (meth)acrylate, and is insoluble or poorly soluble itself in an alkali, but becomes alkali-soluble after dissociation of the above-mentioned acid unstable group by the action of an acid; a radiation sensitive acid generating agent; and polypropylene glycol.

Chemical amplifying type positive resist composition

A chemically amplified positive resist composition capable of giving a resist film excellent in adhesion to a substrate; excellent in various resist performance characteristics such as dry etching resistance, sensitivity and resolution; and comprising a resin (X) which, per se, is insoluble or slightly soluble in alkali but becomes soluble in alkali due to an action of acid, and has a polymeric unit (a) derived from 3-hydroxy-1-adamantyl(meth)acrylate and a polymeric unit (b) derived from &bgr;-(meth)acryloyloxy-&ggr;-butyrolactone wherein the lactone ring may optionally be substituted by alkyl; and an acid generating agent (Y).

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Osaka, Japan

Junji Nakanishi