Canon Kabushiki Kaisha

Junji Iwata

Hajime Ikeda

Tetsuya Itano

Kazuo Yamazaki

Nobuyuki Endo

Kyouhei Watanabe

Kazuhiro Morimoto

Fumihiro Inui

Masahiro Kobayashi

Koichi Fukuda

Kohei Okamoto

Daichi Seto

Yuichiro Yamashita

Takanori Watanabe

Mahito Shinohara

Hiroshi Sekine

Yasushi Matsuno

Yu Maehashi

Takehito Okabe

Yoshiyuki Hayashi

Yoichi Wada

Ginjiro Toyoguchi

Yoichiro Handa

Masaya Ogino

Kentarou Suzuki

Hideyuki Ito

Hiroki Hiyama

Yusuke Onuki

Hideki Hayashi

Takeshi Akiyama

Hiroaki Sano

Masatsugu Itahashi

Hiroaki Kameyama

Takamasa Sakuragi

Hiromasa Tsuboi

Keisuke Ota

Hiroaki Naruse

Sho Suzuki

Tomoya Kumagai

Kentaro Suzuki

Takafumi Miki

Keita Torii

Tomoya Sasago

Satoko Iida

Takashi Usui

Hiroyuki Tsuchiya

Yoshiharu Sawada

Yusuke Todo

Aymantarek Abdelghafar

Ayman Abdelghafar Tarek

Provided is a photoelectric conversion device including: a first substrate having a first face; photodiodes arranged in the first substrate and each having a first region that generates signal charges by photoelectrically converting an incident light and a second region that receives the signal charges moving from the first region; a first isolation region arranged in the first substrate at a first depth and including a first portion extending in a first direction so as to isolate the second regions from each other; and a second isolation region arranged in the first substrate at a second depth deeper than the first depth from the first face, and including a second portion extending in a second direction intersecting the first direction in plan view so as to isolate the first regions from each other, and the first and second portions are partially overlapped with each other in plan view.

Photoelectric conversion device, imaging system, and mobile apparatus

A photoelectric conversion device includes a connecting portion that electrically connects a contact plug of anode wiring and the second semiconductor region of the isolation portion. The connecting portion includes a third semiconductor region of the second conducting type that is connected to the contact plug of the anode wiring, and a fourth semiconductor region of the second conducting type that is disposed between the third semiconductor region and the second semiconductor region. The impurity concentration of the third semiconductor region is higher than the impurity concentration of the second semiconductor region and the impurity concentration of the fourth semiconductor region is lower than the impurity concentration of the third semiconductor region. With respect to a direction in which the APDs are arrayed, the width of the isolation portion is smaller than the width of the connecting portion.

Photoelectric conversion device, photoelectric conversion system, and equipment

A photoelectric conversion apparatus includes a first and a second multilayer wiring layer. The first or the second multilayer wiring layer is provided with a first electrode supplied with a first voltage from an outside of the photoelectric conversion apparatus. The first electrode is not connected with a second semiconductor layer.

Photoelectric conversion apparatus, photoelectric conversion system, and moving object

An apparatus includes a plurality, of avalanche diodes disposed in a layer having a first surface and a second surface opposite the first surface, wherein the plurality of avalanche diodes each includes a first region of first conductivity type located at a first depth, a second region of second conductivity type located at a second depth greater than the first depth with respect to the second surface, and a third region of the second conductivity type located at a third depth greater than the second depth with respect to the second surface, wherein the layer includes a plurality of structures disposed in the first surface, and wherein the plurality of structures has an effective period less than hc/E(h: Planck's constant [J·s], c: speed of light [m/s], and E: a band gap of a substrate [J].

Photoelectric conversion apparatus

A photoelectric conversion apparatus includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type that is arranged at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type and which is arranged at a second depth deeper than the first depth. A fourth semiconductor region at least one of a conductivity type and an impurity concentration of which is different from those of a third semiconductor region of the second conductivity type is arranged at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than that of the avalanche multiplication unit.

Photoelectric conversion apparatus and photoelectric conversion system

A semiconductor element including an array in which a plurality of avalanche photodiodes is arranged includes a plurality of first electrodes configured to receive supply of a first voltage to be used by the plurality of avalanche photodiodes from outside, and at least one second electrode configured to receive supply of a second voltage from outside different from the first voltage. The plurality of first electrodes and the at least one second electrode are disposed outside the array. The at least one second electrode is disposed between one and another one of the plurality of first electrodes.

Semiconductor element, apparatus, and chip

A photoelectric conversion apparatus includes a first substrate including a plurality of avalanche photodiodes, a second substrate including a plurality of pixel circuits, and a third substrate including a signal processing circuit, wherein the second substrate and the third substrate are stacked in such a manner that a third wiring structure is disposed between two semiconductor layers included in the second substrate and the third substrate, with a first through wire penetrating through the semiconductor layer included in the third substrate is disposed.

Photoelectric conversion apparatus, photoelectric conversion system, and movable body

A photoelectric conversion apparatus includes a first substrate having a first semiconductor device layer including a plurality of photoelectric conversion units and a well, and a second substrate having a second semiconductor device layer including a circuit configured to process signals obtained by the plurality of photoelectric conversion units, wherein the first and second substrates are laminated together, wherein the first semiconductor device layer includes an effective pixel region, an optical black pixel region, and an outer periphery region, wherein, in a planar view, a light-blocking region formed by a light-blocking layer overlaps the optical black pixel region, and the light-blocking region does not overlap the outer periphery region, wherein the outer periphery region has a charge draining region including a semiconductor region of the same conductivity type as a signal charge, and wherein a fixed potential is supplied to the charge draining region.

Photoelectric conversion apparatus, photoelectric conversion system, and moving body

There are provided a light detection device and a photoelectric conversion system including the light detection device including an avalanche diode including a first semiconductor region of a first conductivity type disposed at a first depth, a second semiconductor region of a second conductivity type disposed at a second depth deeper than the first depth with respect to the first surface, a third semiconductor region that is disposed at a third depth deeper than the second depth with respect to the first surface and is in contact with the second semiconductor region, and first and second separation regions each extending from the first depth to the third depth. The second semiconductor region and the third semiconductor region each extend from the first separation region to the second separation region. The first semiconductor region, the second semiconductor region, and the third semiconductor region have portions overlapping one another in planar view.

Light detection device including an avalanche diode

An apparatus includes a layer that has a light incident surface and includes elements, and a wiring structure. Each of the elements includes a photodiode. The photodiode includes first and second regions of first and second conductivity types. A voltage is supplied to the second region through a second-conductivity-type region. The wiring structure includes a first wiring positioned closest to the layer among wirings to supply the voltage to the second-conductivity-type region, a plug connecting the first wiring and the second-conductivity-type region, and a second wiring supplying a voltage to the first region. The second wiring covers the first region when viewed in plan, and a distance between the second wiring and the layer is shorter than a distance between the first wiring and the layer.

Photoelectric conversion apparatus and optical detection system

A member for a solid-state image pickup device having a bonding plane with no gaps and a method for manufacturing the same are provided. The manufacturing method includes the steps of providing a first substrate provided with a photoelectric converter on its primary face and a first wiring structure, providing a second substrate provided with a part of a peripheral circuit on its primary face and a second wiring structure, and performing bonding so that the first substrate, the first wiring structure, the second wiring structure, and the second substrate are disposed in this order. In addition, at least one of an upper face of the first wiring structure and an upper face of the second wiring structure has a concave portion, and a conductive material forms a bottom face of the concave portion.

Member for solid-state image pickup device and method for manufacturing solid-state image pickup device

A photoelectric conversion apparatus includes a semiconductor substrate, a plurality of avalanche diodes formed within the semiconductor substrate, the plurality of avalanche diodes including a first avalanche diode and a second avalanche diode, and a trench structure formed between the first avalanche diode and the second avalanche diode in a plan view. Each of the avalanche diodes includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. A contact plug for supplying a potential to the second semiconductor region of the first avalanche diode is formed, and the contact plug is provided at a position where the contact plug overlaps with the trench structure in a plan view.

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Tokyo, Japan

Junji Iwata