Matsushita Electric Industrial Co., Ltd.

Sumitomo Electric Industries, Limited

Junji Itoh

Shinji Yamamoto

Takeshi Fukuda

Takahiro Yokoyama

Tadayoshi Nakatsuka

Masaaki Nishijima

Osamu Ishikawa

Taketo Kunihisa

Mitsuru Nishitsuji

Ikuo Imanishi

Daisuke Watanabe

Kaoru Muramatsu

Yoshihisa Ishigaki

Toshio Fujiwara

Kazuhisa Fujimoto

Tomoya Ozaki

One aspect of the present invention relates to a computer program for causing a computer to operate as an energy management system for managing the operation state of electric power devices including a storage battery connected to a power grid. The program includes: a first step of acquiring static parameters used in controlling the electric power devices; and a second step of controlling the electric power devices based on the acquired static parameters. The static parameters acquired in the first step include at least five types of parameters, namely, a storage battery capacity, dischargeable power, chargeable power, discharge efficiency, and charge efficiency.

Energy management system, energy management method and computer program

A mixer circuit is composed of a differential amplifier circuit and a DBM circuit. The differential amplifier circuit has a first bipolar transistor, a second bipolar transistor, a first resistor provided between the respective bases of the first and second bipolar transistors, and a capacitor provided between the base of the second bipolar transistor and the ground. Since the first resistor and the capacitor are provided such that the circuit undergoes RC oscillation in response to the third harmonic of an input signal, the third and higher-order harmonics can be reduced.

Mixer circuit and differential amplifier circuit

When forming first and second circuits on a semiconductor substrate, an isolation region is provided between the first and second circuits by embedding a conductor in the semiconductor substrate. Also, an output node of a low impedance voltage output circuit that provides a fixed voltage at low impedance is connected to the isolation region. In this way, a noise current caused by high-frequency noise generated from the first or second circuit flows into the low impedance voltage output circuit. Hence leakage of noise signals between the circuits can be suppressed.

Integrated circuit device that can suppress undesired inter-device effects

A transmitter-receiver circuit for radio communication, comprising a low-noise receiver amplifier ( ); a first matching circuit ( ) which converts the input impedance of the amplifier ( ); a transmitter amplifier ( ) including a second matching circuit ( ) and a third matching circuit ( ) which convert the impedances to transmitting signals; and a mode switch ( ) for changing from transmitting to receiving and vice versa. The transmitter amplifier ( ) has a control terminal ( ) connected to the gate electrode of a high-power FET ( ), and the output terminal ( A) of the terminal ( ) is connected to an antenna ( ) not through the switch ( ).

Transmitter-receiver circuit for radio communication and semiconductor integrated circuit device

An RF-driven semiconductor chip is die-bonded to the top face of a metal plate. The semiconductor chip and the metal plate are molded together with outer leads in a plastic package in the form of a rectangular parallelepiped. The metal plate is exposed at the back face of the plastic package. The metal plate is not protruding from the front and rear side faces of the plastic package. The front and rear side faces of the metal plate are flush with the front and rear side faces of the plastic package and partially exposed at the front and rear side faces of the plastic package. The front and rear portions of the plastic package are centrally formed with respective cutaway portions each in the form of a rectangular parallelepiped. The top face of the metal plate is exposed in the cutaway portions formed centrally in the front and rear portions of the plastic package to form solder portions.

RF-driven semiconductor device

A changeover switch switches connection between an antenna and a transmitter amplifier and connection between the antenna and a receiver low noise amplifier, from one to the other. A first wire having characteristic impedance of 50 .OMEGA. connects the antenna and the changeover switch. A receiver matching circuit matches input impedance of the receiver low noise amplifier with the output impedance of the transmitter amplifier. An antenna side matching circuit matches the input impedance of the receiver low noise amplifier, which is matched with the output impedance of the transmitter amplifier by the receiver matching circuit, and the output impedance of the transmitter amplifier with the characteristic impedance of the first wire. The transmitter amplifier is connected with the changeover switch via a first coupling capacitance, and the receiver matching circuit is connected with the changeover switch via a second coupling capacitance.

Transmitting-receiving circuit for radiocommunication apparatus,

On a ceramic substrate, spiral-type inductors of a single layer wiring of a metal thin film are provided and respectively connected to a wiring pattern formed on another face of the substrate via through holes. A semiconductor chip is flip-chip mounted on the substrate in a face-down manner. On the face of the semiconductor chip, capacitors composed of a highly dielectric material, resistors formed by an ion implantation method or a thin-film forming method, and FETs are provided, respectively. Interconnection between the substrate and an external circuit board is achieved employing terminals formed at end faces of the substrate. The terminals have a concave shape with respect to the end face of the substrate. Thus, there is no need to use a package, and miniaturization and reduction in cost of a high-performance hybrid IC is achieved.

Growing community of inventors

Osaka, Japan

Junji Itoh