Other

Research Development Corporation

Junji Ito

Toru Kurabayashi

Nobuaki Manada

Jun-ichi Nishizawa

Masahito Sakakibara

Masashi Murate

Jun-Ichi Nishizawa

Masahiro Inoue

Masaki Nakagawa

The present invention provides polarized electrodes that ensure a satisfactory packing ratio of activated carbon particles and conductive particulates and favorable contact between these and an electrolyte, and demonstrate high capacitance. The present invention relates to the following electrode materials for polarized electrodes:

Method for preparing an electrode material for a polarized electrode

Binders for porous electrodes and porous electrodes using the same binders

A coating apparatus includes (1) a robot including at least one movable portion, at least one motor for driving the movable portion, and at least one pressurized chamber in which the motor for driving the movable portion is disposed; and (2) a coating device including a coating gun, a paint feed pump and a motor for driving the paint feed pump, the coating device being mounted to the robot. The motor for driving the paint feed pump is disposed in the pressurized chamber.

Coating apparatus and a method of assembling the same

An apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gases are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gases are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

Apparatus for epitaxially growing a chemical compound crystal

In a method of and an apparatus for epitaxially growing a chemical-compound crystal, a plurality of raw-material gasses are alternately introduced into a closed chamber of a crystal growing device to grow the crystal placed within the closed chamber. At growing of the crystal, a light from a light source is emitted to a crystal growing film of the crystal. Intensity of a light reflected from the crystal growing film and received by a photo detector is measured. Charge amounts of the respective raw-material gasses are controlled by a control system on the basis of a change in the reflected-light intensity, thereby controlling a growing rate of the growing film.

Method of and apparatus for epitaxially growing chemical compound crystal

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Miyagi, Japan

Junji Ito