Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Sony Music Entertainment (japan) Inc.

Asahi Denka Kogyo Kabushiki Kaisha

Junichiro Sakata

Shunpei Yamazaki

Hiroki Ohara

Toshinari Sasaki

Miyuki Hosoba

Hisao Ikeda

Masayuki Sakakura

Kengo Akimoto

Masashi Tsubuku

Yoshiaki Oikawa

Satoshi Seo

Hideyuki Kishida

Akiharu Miyanaga

Hideaki Kuwabara

Takuya Hirohashi

Takahiro Kawakami

Yuji Iwaki

Shunichi Ito

Masahiro Takahashi

Hotaka Maruyama

Hiroyuki Miyake

Kenichi Okazaki

Daisuke Kumaki

Tomoya Aoyama

Tetsunori Maruyama

Yuki Imoto

Ryoji Nomura

Ryosuke Watanabe

Junichi Koezuka

Jun Koyama

Takashi Shimazu

Tatsuya Takahashi

Shuhei Yoshitomi

Kosei Noda

Hiromichi Godo

Yasuo Nakamura

Susumu Takatsuka

Suzunosuke Hiraishi

Tetsuya Kohno

Hideo Tsukazaki

Masahiko Hayakawa

Takatoshi Nakamura

Shinichi Iriya

Yuji Asano

Yoshiharu Hirakata

Hideko Inoue

Kaoru Tsuchiya

Takashi Kinouchi

Nobuharu Ohsawa

Makoto Furuno

Norihito Sone

Sachiko Kawakami

Yoshiaki Yamamoto

Harue Nakashima

Ikuko Kawamata

Takahiro Ibe

Takahiro Tsuji

Hisashi Ohtani

Yasuyuki Arai

Hideki Uochi

Tatsushi Nashida

Fuminori Homma

Hiroko Abe

Takashi Hamada

Yusuke Miyazawa

Kohei Yokoyama

Masakazu Murakami

Taketomi Asami

Keigo Ihara

Masaharu Nagai

Takaaki Nagata

Koji Moriya

Yutaka Matsuda

Hajime Kimura

Tetsujiro Kondo

Toru Takayama

Masahiro Kobayashi

Satoko Shitagaki

Aya Anzai

Yoshihiro Yamaguchi

Yasushi Miyajima

Haruo Oba

Kazutaka Kuriki

Koichiro Kamata

Yasuko Watanabe

Yoshinori Watanabe

Yuji Ayatsuka

Keisuke Inoue

Takayuki Inoue

Keiichi Yoshioka

Yasushi Tatehira

Kiyofumi Ogino

Takanori Nishimura

Takako Takasu

Yumiko Saito

Junko Fukuda

Shin Shiroma

Masaaki Miyazawa

Kumi Kojima

Naoki Fujisawa

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

Semiconductor device and manufacturing method thereof

It is an object to provide a highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics. It is another object to manufacture a highly reliable semiconductor device at lower cost with high productivity. In a method for manufacturing a semiconductor device which includes a thin film transistor where a semiconductor layer having a channel formation region, a source region, and a drain region are formed using an oxide semiconductor layer, heat treatment (heat treatment for dehydration or dehydrogenation) is performed so as to improve the purity of the oxide semiconductor layer and reduce impurities such as moisture. Moreover, the oxide semiconductor layer subjected to the heat treatment is slowly cooled under an oxygen atmosphere.

Method for manufacturing semiconductor device

An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

Semiconductor device comprising driver circuit

It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.

Transistor and display device

A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit.

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Display device and method for manufacturing the same

An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films.

Light-emitting device and method for manufacturing the same

Display device including transistor and manufacturing method thereof

An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

Semiconductor device

A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.

Manufacturing method of semiconductor device comprising oxide semiconductor

A highly reliable semiconductor device which includes a thin film transistor having stable electric characteristics, and a manufacturing method thereof. In the manufacturing method of the semiconductor device which includes a thin film transistor where a semiconductor layer including a channel formation region is an oxide semiconductor layer, heat treatment which reduces impurities such as moisture to improve the purity of the oxide semiconductor layer and oxidize the oxide semiconductor layer (heat treatment for dehydration or dehydrogenation) is performed. Not only impurities such as moisture in the oxide semiconductor layer but also those existing in a gate insulating layer are reduced, and impurities such as moisture existing in interfaces between the oxide semiconductor layer and films provided over and under and in contact with the oxide semiconductor layer are reduced.

An aperture ratio of a semiconductor device is improved. A driver circuit and a pixel are provided over one substrate, and a first thin film transistor in the driver circuit and a second thin film transistor in the pixel each include a gate electrode layer, a gate insulating layer over the gate electrode layer, an oxide semiconductor layer over the gate insulating layer, source and drain electrode layers over the oxide semiconductor layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer, and the source and drain electrode layers. The gate electrode layer, the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, and the oxide insulating layer of the second thin film transistor each have a light-transmitting property.

Semiconductor device and method for manufacturing semiconductor device

Growing community of inventors

Atsugi, Japan

Junichiro Sakata