Fujitsu Quantum Devices Limited

Junichiro Nikaido

Teruo Yokoyama

Kenji Arimochi

Eizo Mitani

Yasunori Tateno

Tsutomu Igarashi

Shigeru Kuroda

Kazuo Nambu

At least a channel layer and an etching stopper layer are provided on a semiconductor substrate in order, a gate electrode that Schottky-contacts the etching stopper layer is provided on the etching stopper layer, and InGaP having an In composition ratio of 0.66 through 0.9 is used as the etching stopper layer in a field effect type compound semiconductor device.

Field-effect type compound semiconductor device and method for fabricating the same

The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1&tilde;10 to 1&tilde;10 atoms/cm , or the bandgap of a Schottky layer is set wider than that of the electron supply layer. Otherwise, in the steps of manufacturing the high electron mobility field effect transistor, after a silicon nitride film has been formed on a GaAs buried layer in which a second recess is formed and in a region on the inside of a first recess formed in a GaAs contact layer, the GaAs buried layer is still heated.

Compound semiconductor device and method of manufacturing the same

The impurity concentration contained in a layer on an electron supply layer of a high electron mobility field effect transistor is set in the range of 1&times;10,to 1&times;10,atoms/cm,, or the bandgap of a Schottky layer is set wider than that of the electron supply layer.

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Yamanashi, Japan

Junichiro Nikaido