Kabushiki Kaisha Toshiba

Toshiba Solutions Corporation

Nec Electronics Corporation

Junichi Yamamoto

Hiroyuki Suzuki

Yasutaka Nakashiba

Junichi Nakamura

Masataka Yamada

Makoto Kano

Yasuomi Une

Satoshi Uchiya

Hiroyoshi Kudou

Norikazu Hosaka

Satoshi Sekine

Fumiaki Futamura

Kouji Gouda

Tsuyoshi Shimada

Shinichiro Kawano

Shinichi Matsukawa

Minoru Nishizawa

Kyoji Yamashita

Kiyoshi Matsui

Michiyo Ikegami

Masaya Hirabara

Yuichiro Esaki

Rei Yano

Kazuko Abe

Yasuhide Kurosaki

Naoto Akimoto

Hidekazu Nishizawa

Shinko Riku

According to one embodiment, there is provided a charging management system. Based on an estimated duration from a time when an electric vehicle having arrived at each of a charging facilities starts charging until the charging is complete, the system determines the charging facility a charging facility utilization of which is to be recommended to be one of the charging facilities related to a path to a destination which has a shortest maximum wait time from a time when a plurality of electric vehicles arrive at the charging facility until the charging is complete, and reports information indicative of the determined charging facility to the electric vehicle not having arrived at the charging facility.

Charging management system

According to an embodiment, there is provided a consumed power amount estimation apparatus including an estimation unit configured to estimate a power amount necessary for an electric vehicle having a similar power consumption tendency to run, based on a parameter used to compensate for information affecting power consumption by running of the electric vehicle based on consumed power amount information of each of a plurality of electric vehicles having similar power consumption tendencies.

Consumed power amount estimation apparatus

According to one embodiment, a charge management apparatus includes an input unit, a first estimation unit, a determination unit, a generation unit, and an output unit. The input unit accepts an input of traffic demand data indicative of a number of vehicles. The first estimation unit estimates charge wait times at plural charge stations based on the traffic demand data. The determination unit compares the estimated charge wait times at the respective charge stations, and determines whether a desired condition is satisfied. The generation unit generates charge recommendation information indicative of a charge station according to a determination result. The output unit outputs the charge recommendation information to an external terminal.

Charge management apparatus

According to one embodiment, a policy management system includes a user terminal, an ID provider system which manages an identity of a user, and a service provider system which provides service data. The ID provider system stores a pair of an old policy and a new policy with respect to each service provider ID. The ID provider system stores information with respect to each service provider ID, the difference-adaptive definition information defining a first condition which is referred to when a date of transmission of an access request message is within a transition period from the old policy to new policy, and a second condition which is referred to when the date of transmission of the access request message is out of the transition period.

Policy management system, id provider system, and policy evaluation device

A solid-state imaging device includes an N-type semiconductor substrate, an N-type impurity region provided in the surficial portion of the N-type semiconductor substrate, a photo-electric conversion unit formed in the N-type impurity region, a charge accumulation unit formed in the N-type impurity region so as to contact with the photo-electric conversion unit, and temporarily accumulating charge generated in the photo-electric conversion unit, a charge hold region (barrier unit) formed in the N-type impurity region so as to contact with the charge accumulation unit, and allowing the charge accumulation unit to accumulate the charge, and a charge accumulating electrode provided to the charge accumulation unit. The charge accumulation unit and the charge hold region are formed to be N-type.

Solid-state imaging device and method of driving the same

A content management system according to an example of the invention accepts a storage request including a content ID to identify a content, records reference data which is used to make reference to the content and the content ID in a recording unit in association with each other when the content has been already recorded in the recording unit, and requests the content for a storage request issuer and records the content and the content ID in the recording unit in association with each other when the content is not yet recorded. The content management system accepts an acquisition request including the content ID, reads the content from the recording unit, and distributes the content to an acquisition request issuer.

Content management system, recording medium and method

A data searching unitof a data searching apparatusObtains, according to a searching request including a search condition specified by a data searching application, metadata which satisfy the search condition from a data storage unit, and instructs an external communication unitto request searching of data to a data providing apparatuswith the same search condition.

Data searching system, method of synchronizing metadata and data searching apparatus

In the solid-state image sensing device, a first N type semiconductor region and an N well of a PMOS region are formed in the same process, thereby making the first N type semiconductor region and the N well in the PMOS region substantially equal in N type impurity concentration-depth profile. By forming the first N type semiconductor region and the N well in the same process, the number of manufacturing process for the solid-state image sensing device can be decreased. It is, therefore, possible to suppress excessive application of heat history to the solid-state image sensing device during ion implantation and diffusion of N type impurity. Accordingly, by suppressing excessive diffusion of impurity and the like resulting from the excessive application of the heat history to the solid-state image sensing device, yield of the solid-state image sensing device can be improved.

Solid-state image sensing device and method for manufacturing the same

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Fuchu, Japan

Junichi Yamamoto