Hitachi Metals, Ltd.

Kabushiki Kaisha Yaskawa Denki

Hitachi, Ltd.

Junichi Watanabe

Hisayuki Imamura

Shigeru Jomura

Youichirou Kaga

Yoshiyuki Watanabe

Takahiro Someji

Hiromi Kikuchi

Suguru Fujita

Toshiaki Morita

Kazuhiro Suzuki

Isamu Matsumura

Hideko Fukushima

Toshinobu Kira

Mitsujiro Sawamura

Minoru Koga

Tetsuya Asai

Kazuo Kazama

Hiroyuki Teshima

Kiyomi Tanaka

Daichi Horimai

Mitsuaki Chiba

Tae-Woong Kim

Katsuhiko Kojyou

Shigeru Jyoumura

Akihito Mizuno

A multi-axis control adjustment apparatus includes adjustment axis selection circuitry configured to select a plurality of target axes among a plurality of axes each of which represents a combination of a motor and a motor control device configured to control the motor according to a control parameter of the motor control device, adjustment operation execution circuitry configured to perform adjustment operations in each of which the control parameter is adjusted with respect to each of the plurality of target axes, and first control parameter setting circuitry configured to change, according to the adjustment operations, timing at which the control parameter is set with respect to each of the plurality of target axes.

Multi-axis control adjustment apparatus, multi-axis control adjustment system, and multi-axis control adjustment method

A method for producing a ceramic circuit substrate comprising the steps of forming brazing regions each comprising brazing material powder and an organic binder on a ceramic substrate; setting metal plates on the ceramic substrate via the brazing regions, and heating the ceramic substrate, the brazing regions and the metal plates to bond the metal plates to the ceramic substrate via brazing layers made of the brazing material, thereby forming a bonded body; and cleaning the bonded body with a hypochlorite-containing agent.

Ceramic circuit substrate and its production method

To provide a brazing material for maintaining bonding strength between ceramic substrate and metal plate at a conventionally attainable level, while addition amount of In is reduced, and a brazing material paste using the same. A mixture powder provided by mixing alloy powder composed of Ag, In, and Cu, Ag powder, and active metal hydride powder, the mixture powder containing active metal hydride powder with a 10-to-25-&#x3bc;m equivalent circle average particle diameter by 0.5 to 5.0 mass %, the equivalent circle average particle diameters for the alloy powder, Ag powder, and active metal hydride powder having a relationship: alloy powder&#x2267;active metal hydride powder&#x3e;Ag powder, and the powder mixture having a particle size distribution of d10 of 3 to 10 &#x3bc;m, d50 of 10 to 35 &#x3bc;m, and d90 of 30 to 50 &#x3bc;m, and in the frequency distribution, a peak of the distribution existing between d50 and d90.

Brazing material, brazing material paste, ceramic circuit substrate, ceramic master circuit substrate, and power semiconductor module

This disclosure discloses a brake diagnosis device configured to diagnose a brake of a motor with a brake. The brake diagnosis device includes a brake control part, a diagnosis part, and a signal output part. The brake control part is configured to actuate or release the brake. The diagnosis part is configured to diagnose a presence or absence of an abnormality of the brake while the brake is actuated by the brake control part. The signal output part is configured to output a signal related to a brake abnormality after the brake is released by the brake control part in a case that the diagnosis part diagnoses the brake as having an abnormality.

Brake diagnosis device and brake diagnosis method

A manufacturing method with which a high thermal conductivity silicon nitride substrate having excellent sintering performance can be manufactured without the occurrence of a molding crack or degreasing crack, as well as to provide a silicon nitride substrate, and a silicon nitride circuit board and a semiconductor module using the silicon nitride substrate. In the manufacturing method, in which a slurry is produced by mixing a silicon nitride powder, a sintering additive powder, and a binder in an organic solvent which is a dispersion medium, and the slurry is formed into a sheet, followed by degreasing and sintering, the oxygen content of the silicon nitride powder is 2.0 mass % or less and the specific surface area of the same is 3 to 11 m/g, the additive ratio of the sintering additive powder is 4 to 15 mol %, and the water content ratio of the organic solvent is 0.03 to 3 mass %.

Silicon nitride substrate manufacturing method, silicon nitride substrate, silicon nitride circuit substrate, and semiconductor module

A silicon nitride sintered body, wherein in a silicon nitride substrate consisting of crystal grains of &#x3b2;-type silicon nitride and a grain boundary phase containing at least one type of rare earth element (RE), magnesium (Mg) and silicon (Si), the grain boundary phase consists of an amorphous phase and a MgSiNcrystal phase. The X-ray diffraction peak intensity of any crystal plane of a crystal phase containing the rare earth element (RE) is less than 0.0005 times the sum of the diffraction peak intensities of (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the &#x3b2;-type silicon nitride; and the X-ray diffraction peak intensity of (121) of the MgSiNcrystal phase is 0.0005 to 0.003 times the sum of the X-ray diffraction peak intensities of (110), (200), (101), (210), (201), (310), (320) and (002) of the crystal grains of the &#x3b2;-type silicon nitride.

Silicon nitride sintered body, method of producing the same, and silicon nitride circuit substrate and semiconductor module using the same

A circuit board and a semiconductor module with high endurance against thermal cycles, and which is hard to be broken under thermal cycles, even if thick metal circuit board and thick metal heat sink are used, corresponding to high power operation of a semiconductor chip are provided. This circuit board includes, an insulating-ceramic substrate, a metal circuit plate bonded to one face of the insulating-ceramic substrate, a metal heat sink bonded to another face of the insulating-ceramic substrate, wherein (t&#x2212;t)/t/K&#x3c;1.5, where, a thickness of the insulating ceramics substrate is t, a thickness of the metal circuit plate is t, a thickness of the metal heat sink is t, and an internal fracture toughness value of the insulating ceramics substrate is K.

Circuit board and semiconductor module using this, production method for circuit board

A motor control device includes a dq-axis current control unit for generating a dq-axis voltage reference based on a dq-axis current reference and a dq-axis current signal, an initial magnetic pole position estimation unit for estimating a magnetic pole position of the motor upon power-on to generate a magnetic pole position signal, and a magnetic pole position estimation precision confirming unit for supplying a current in a d-axis direction after generation of the magnetic pole position signal with the initial magnetic pole position estimation unit, and checking an error of the magnetic pole position signal based on an angle of movement of the motor.

Motor control device and magnetic pole position estimation precision confirming method

A silicon nitride substrate having appropriately adjusted warpage and surface roughness can be obtained by mixing magnesium oxide of 3 to 4 wt % and at least one kind of rare-earth element oxide of 2 to 5 wt % with silicon nitride source material powder to form a sheet-molded body, sintering the sheet-molded body, and performing a heat treatment at a temperature of 1,550 to 1,700 degree C. with a pressure of 0.5 to 6.0 kPa with a plurality of substrates being stacked. Also, a silicon nitride circuit board and a semiconductor module using the same are provided.

Silicon nitride substrate, method of manufacturing the same, and silicon nitride circuit board and semiconductor module using the same

In the silicon nitride substrate concerning an embodiment of the invention, degree of in-plane orientation fa of &#x3b2; type silicon nitride is 0.4-0.8. Here, degree of in-plane orientation fa can be determined by the rate of the diffracted X-ray intensity in each lattice plane orientation in &#x3b2; type silicon nitride. As a result of research by the inventors, it turned out that both high fracture toughness and high thermal conductivity are acquired, when degree of in-plane orientation fa was 0.4-0.8. Along the thickness direction, both the fracture toughness of 6.0 MPa&#xb7;mor higher and the thermal conductivity of 90 W/m&#xb7;K or higher can be attained.

Silicon nitride substrate, a manufacturing method of the silicon nitride substrate, a silicon nitride wiring board using the silicon nitride substrate, and semiconductor module

To provide a current controller capable of constantly detecting an offset value of a current detection system, the offset value overlapping with a current detection value, in a state of regular operation of a motor to correct the current detection value and capable of current detection with high accuracy and a current offset correction method of the same. A carrier wave peak-trough judging partis provided to discriminating the peak and the trough of a carrier wave. An A/D converted value detected in falling from the peak of the carrier wave is used as a current detection value. An A/D converted value detected in rising from the trough of the carrier wave is used as an offset value in the case that a modulated wave command is larger than a comparison standard value capable of computation by means of a calculation formula. On the basis of the current detection value and the offset value, carried out is an operation of a current detection correction value.

Current controller and current offset correction

A semiconductor device having both high strength and high thermal radiation that is capable of being applied to mounting on automobiles experiencing many thermal cycles, and a manufacturing method thereof are provided. A circuit boardfor a resin encapsulated semiconductor module device has a configuration where a silicon nitride platewith a thickness of 0.635 mm has copper plates of 1.0 mm and 0.8 mm bonded to both sides thereof via active metal. A copper plateis bonded to the surface side of the silicon nitride plateand a prescribed circuit pattern is formed on the copper plateTin-silver-copper cream solder layersandwith a thickness of 200 &#x3bc;m are formed at a prescribed location on the circuit patternon which a semiconductor elementis mounted and at a prescribed location of a base plateon which the circuit boardis disposed. Nickel particleshaving a maximum particle size of 100 &#x3bc;m and an average particle size of 70 &#x3bc;m are dispersed in the solderon the base plateof good thermal conductivity. A semiconductor element (chip)the circuit boardand the base plateare disposed on predetermined locations. Thereafter, they are set in a reflow oven (not shown in the drawings) for reflow soldering. After the inside of the reflow oven is replaced by a nitrogen atmosphere, the reflow oven is heated to 280&#xb0; C. At the time when solder is melted, the inside of the oven is decompressed to 1 Pa, nitrogen is introduced, and the reflow oven is cooled to about room temperature, thereby completing the solder bonding step. After flux is washed, an outer casewith an insert-molded outlet terminalis adhered to the base plateand a predetermined connection is conducted via an aluminum bonding wireThen, silicone gelis injected into a package delimited via the base plateand the outer caseand the silicone gelis heat-hardened, thereby completing a resin encapsulated semiconductor device A.

Resin encapsulated semiconductor device and the production method

Initial magnetic pole estimating apparatus for an AC synchronous motor equipped in an AC synchronous motor controller, which has a speed gain control unit, mode section determining means, first command torque calculating means for selecting a first or a second cyclic section in accordance with the result in the mode section determining means, and determining whether or not a command speed is in a data acquisition speed section when the first cyclic section is selected, and calculating first command torque data from a command torque in the data acquisition speed section, second command torque calculating means for determining whether or not the command speed is in the data acquisition speed section when the second cyclic section is selected, and calculating second command torque data from the command torque in the data acquisition speed section, and estimated initial magnetic pole calculating means for calculating an estimated initial magnetic pole position using information on the first command torque data and second command torque data.

Initial magnetic pole estimating device for AC synchronous motor

A piezoelectric sintered ceramic made of (a) 100 parts by weight of main components having a composition represented by the general formula: (Pb,M,)(Zr,Ti,)O,, wherein M is at least one element selected from the group consisting of Sr, Ba and Ca, and y and z are numbers satisfying 0.01&lE;y&lE;0.10, and 0.51&lE;z&lE;0.56, respectively; (b) 0.05-1.0 parts by weight, as Fe,O,, of Fe; and (c) 10-1000 ppm of Ag.

Piezoelectric sintered ceramics and piezoelectric ceramic elements constituted thereby

A flow rate control valve including a valve chest having an open end, an inflow passage and outflow passage each having one end communicating with the valve chest and the other end opened, a valve seat provided at the end of the inflow passage or outflow passage communicating with the valve chest, a sheet-like diaphragm provided to tightly close the open end of the valve chest and a stacked-type dispalcement device made of an electromechanical transducing material exhibiting the maximum value of piezoelectric distortion constant at a higher temperature range than 100.degree. C. or above and which exerts a pressure on the diaphragm by its deformation to change the position of the diaphragm, thereby controlling the gap between the valve seat and the diaphragm.

Growing community of inventors

Kitakyushu, Japan

Junichi Watanabe