Hitachi, Ltd.

Junichi Umeda

Michiharu Nakamura

Tadashi Fukuzawa

Kunio Aiki

Shigeo Yamashita

Motohisa Hirao

A semiconductor laser light emitting element comprises a semiconductor substrate, a laminate region of semiconductor layers having at least a first, a second and a third semiconductor layer formed over the substrate and having a p-n junction defined therein. The first and third semiconductor layers have smaller refractive indices and greater forbidden band gaps than the second semiconductor layer and are opposite in conductivity type to each other. Provided are on the substrate a field effect transistor section having first and second electrodes and a gate electrode disposed between the first and second electrodes, a means for serving as an optical resonator for emitting light in the lengthwise direction of the p-n junction. A means is formed on one surface of the laminate region for injecting current into the third semiconductor layer, the current injection means is short-circuited with the first electrode of the field transistor section and a means is formed on the substrate for receiving the current injected from the current injecting means.

Semiconductor light emitting element

A semiconductor laser device comprises an n-type GaAs layer, an n-type GaAlAs layer disposed on the n-type GaAs layer, a laser active layer consisting of a p-type GaAs layer disposed on the n-type GaAlAs layer, a first p-type GaAlAs layer disposed on the laser active layer, the surface of which opposing said laser active layer is a periodically corrugated surface, a second p-type GaAlAs layer disposed on the periodically corrugated surface of the first p-type GaAlAs layer, a p-type GaAs layer disposed on the second p-type GaAlAs layer, and electrodes disposed on the n-type and p-type GaAs layers, respectively, and having a very low threshold value for laser oscillation.

Semiconductor laser device

A semiconductor device including a GaAs layer having a periodic corrugation on a surface thereof with a GaAsAl layer disposed on the periodic corrugation is formed by contacting a solution consisting of Ga, Al and As heated at a temperature of about 700.degree. C. to the corrugated surface of the GaAs layer and cooling the solution to a temperature of about 670.degree. C. at a cooling rate of 5.degree. C./min. whereby the periodic corrugation is not transfigured so much.

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Hachioji, Japan

Junichi Umeda