Shin-etsu Handotai Co., Ltd.

Fujikoshi Machinery Corp.

Fujibo Holdings, Inc.

Junichi Ueno

Michito Sato

Syuichi Kobayashi

Kaoru Ishii

Kazuya Sato

Yosuke Kanai

Yuya Nakanishi

Hideo Kudo

Hiromi Kishida

Hisashi Masumura

Hiromasa Hashimoto

Koji Kitagawa

Tadakazu Miyashita

Atsushi Kajikura

Yoshinobu Nishimoto

Masataka Takagi

Ryosuke Yoda

Yoshihide Kawamura

Daisuke Takahashi

Hiroshi Yoshida

Kohki Itoyama

A polishing apparatus including: a turntable with an attached polishing pad; a polishing head that holds a wafer; a tank that stores a polishing agent; a polishing agent supply mechanism which supplies the stored polishing agent to the polishing pad; a waste liquid receiver which collects the polishing agent flowing from the turntable; and a circulation mechanism which is connected to the waste liquid receiver and supplies the collected polishing agent to the tank, the polishing agent is supplied to the polishing pad from the tank with the polishing agent supply mechanism, the used polishing agent which flows from the turntable is collected by the waste liquid receiver, a surface of the wafer held by the polishing head is rubbed against the pad to polish it while supplying the collected polishing agent to the tank to circulate the polishing agent, and the waste liquid receiver is fixed to the turntable and the waste liquid receiver having a bottom plate and a removable side plate.

Polishing apparatus with a waste liquid receiver

A polishing method including rubbing a wafer held by holding means against a polishing pad attached to a turntable while cooling the turntable by supplying a refrigerant to a refrigerant flow path provided in the turntable which is driven to rotate by a motor, thereby performing polishing, the polishing method being characterized in that, during standby after end of the polishing of the wafer and before performing the polishing of a next wafer, a flow volume of the refrigerant is controlled to be less than a flow volume of the refrigerant during the polishing where the wafer is polished, the turntable is rotated by the motor, and a water retaining liquid having a temperature adjusted to a room temperature or more is supplied to the polishing pad.

Polishing method and polishing apparatus

A polishing apparatus which is an index system polishing apparatus which includes a polishing head for holding a wafer, a plurality of turn tables to which polishing pads for polishing the wafer are attached, and a loading/unloading stage for loading the wafer to the polishing head or unloading the wafer from the polishing head, and which polishes the wafer while switching the turn tables to be used for polishing the wafer held at the polishing head by causing the polishing head to perform rotation movement, the polishing apparatus including a turn table upward and downward movement mechanism which allows the turn table to move upward and downward. With this polishing apparatus, it is possible to reduce an amount of displacement caused when moment load is applied on the polishing head during polishing.

Polishing apparatus and wafer polishing method

A polishing apparatus includes: a plurality of polishing heads for holding a wafer, a polishing pad for polishing the wafer, a rotatable turn table having the polishing pad attached thereto, a turn table driving mechanism for rotating the turn table, a plurality of wafer-detecting sensors for detecting coming off of the wafer from the polishing head during polishing, wherein the polishing apparatus has the wafer-detecting sensor disposed above peripheral portions of the respective polishing heads and on each downstream side in a rotation direction of the turn table with respect to the respective polishing heads. The polishing apparatus can detect coming off of a wafer from a polishing head during polishing more rapidly, and can prevent a breakage of the wafer thereby.

Polishing apparatus

Provided is a polishing pad capable of sufficiently reducing minute defects to be generated after polishing on a workpiece which are detected in measurement for a particle size of 26 nm or smaller and capable of providing the workpiece with excellent surface flatness. The polishing pad includes a polishing layer having a polishing surface to polish a workpiece, and includes, in the side opposite to the polishing surface of the polishing layer, an intermediate layer having an amount of deformation C larger than that of the polishing layer, a hard layer having an amount of deformation C smaller than that of the polishing layer, and a cushion layer having an amount of deformation C larger than that of the intermediate layer, in which each of the amounts of deformations C is defined as an amount of deformation in the case of compression in a thickness direction, and the intermediate layer, the hard layer, and the cushion layer are laminated in this order from the side of the polishing layer.

Polishing pad and method for manufacturing the same

A dressing apparatus for dressing a urethane foam pad, for use in polishing, by bringing diamond abrasive grains into sliding contact with the urethane foam pad, includes a support for holding the grains. The grains have multiple grit sizes, and include a high-grit diamond abrasive grain with a grit size of #170 or more and a low-grit diamond abrasive grain with a grit size of #140 or less. The grains are held by the support such that height positions of dressing surfaces of the grains are on the same plane. The dressing surfaces come into contact with the urethane foam pad. As a result, a dressing apparatus is capable of sufficiently roughening the surface of the urethane foam pad by one-time dressing without closing holes of the foaming part of the urethane foam pad, enabling short dressing time, long dressing interval, and inhibition of lowering of productivity.

Apparatus for dressing urethane foam pad for use in polishing

A carrier for a double-side polishing apparatus comprising at least: a metallic carrier base that is arranged between upper and lower turn tables having polishing pads attached thereto and has a holding hole formed therein to hold a wafer sandwiched between the upper and lower turn tables at the time of polishing; and a ring-like resin insert that is arranged along an inner peripheral portion of the holding hole of the carrier base and is in contact with a peripheral portion of the held wafer, wherein an inner peripheral end portion of the holding hole of the carrier base has an upwardly opening tapered surface, an outer peripheral portion of the ring-like insert has a reverse tapered surface with respect to the tapered surface of the holding hole of the carrier base, and the resin insert is fitted in the holding hole of the carrier base through the tapered surface.

Carrier for a double-side polishing apparatus, double-side polishing apparatus using this carrier, and double-side polishing method

A double-side polishing apparatus including at least: upper and lower turn tables each having a polishing pad attached thereto; a carrier having a holding hole formed therein for holding a wafer between the upper and lower turn tables; a sensor for detecting a thickness of the wafer during polishing, the sensor being disposed in a through-hole provided at the upper turn table in a direction of an upper-turn-table rotation axis; and a sensor holder for holding the sensor, wherein a material of the sensor holder is quartz. As a result, there is provided a double-side polishing apparatus that can polish a wafer while the difference from the target wafer thickness is reduced by surely inhibiting deformation of the sensor holder due to the influence of heat generated during the polishing of the wafer.

Double-side polishing apparatus

A polishing pad capable of improving an affinity to polishing liquid and stabilizing polishing performance is provided. A polishing padis equipped with a urethane sheet. The urethane sheethas a polishing surface P for polishing an object to be polished. The urethane sheetis formed by a dry molding method and is formed by slicing a polyurethane foamed body which is obtained by reacting and curing mixed liquid in which an isocyanate-group containing compound, water, a foam control agent and a polyamine compound are mixed. Foamsare dispersed approximately uniformly inside the urethane sheet. Opened poreswhich are opened parts of the foamsare formed at the polishing surface P. Inside the urethane sheet, the foamsformed adjacently to each other are communicated by communication holes, and the communication holesare formed at a ratio of 800 holes/cmor more when observed from a side of the polishing surface P. Polishing liquid moves via the communication holesand the foams

Polishing pad, manufacturing method thereof and polishing method

Provided is a polishing apparatus comprising a lower stool (), a motor () and a speed reducer () for driving the lower stool, and a box () for covering at least the portion of the lower stool below the working action face. The polishing apparatus polishes a wafer by forcing the wafer to contact the lower stool and by rotating the lower stool. The box has its inside separated by partitions (and) into a plurality of regions, and the motor for driving the lower stool is arranged in a region other than the region containing the lower stool. The polishing apparatus can manufacture a wafer of a stable shape, irrespective of the time elapsed from the running start and the presence/absence of the stop of the polishing apparatus.

A carrier for a double-side polishing apparatus, including at least: a carrier base placed between upper and lower turn tables, the carrier base having a holding hole therein, the holding hole holds the wafer sandwiched between the upper and lower turn tables. A ring-shaped resin ring disposed along an inner circumference of the holding hole, the resin ring protecting a chamfered portion by making contact with the chamfered portion of the held wafer, wherein the resin ring has a concave groove on an inner circumference thereof, upper and lower tapered surfaces are formed in the concave groove. A double-side polishing apparatus using the carrier and a double-side polishing method that can reduce the generation of taper in a polished surface and improve the flatness while suppressing the generation of an outer peripheral sag of the wafer.

Carrier for double-side polishing apparatus, double-side polishing apparatus using the same, and double-side polishing method

There is provided a double-side polishing method for a wafer of sandwiching a wafer held in a carrier between upper and lower turn tables each having a polishing pad attached thereto and simultaneously polishing both surfaces of the wafer while supplying a slurry to a space between the upper and lower turn tables from a plurality of slurry supply holes provided in the upper turn table, wherein a polishing amount at an outer peripheral portion of the wafer to be polished is adjusted and outer peripheral sag of the wafer is suppressed by supplying the slurry in such a manner that an amount of the slurry supplied from the slurry supply holes provided on an outer side relative to the center of rotation of the upper turn table becomes larger than an amount of the slurry supplied from the slurry supply holes provided on an inner side relative to the same at the time of polishing both the surfaces of the wafer. As a result, the double-side polishing method which can suppress occurrence of the outer peripheral sag of the wafer when the wafer is subjected to double-side polishing can be provided.

Double-side polishing method for wafer

The present invention provides a process for manufacturing a semiconductor wafer capable of effectively reducing unevenness having a wavelength of 0.5 mm or more which remains on a surface of the semiconductor wafer after a first polishing step and improving flatness thereof; and a semiconductor wafer manufactured by the manufacturing process. The manufacturing process comprises: plural polishing steps including a first polishing step and a final polishing step; and a corrective polishing step performed after the first polishing step using a polishing cloth harder than that used in the first polishing step.

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Nishishirakawa, Japan

Junichi Ueno