Tokyo Ohka Kogyo Co., Ltd.

Junichi Tsuchiya

Tomoyuki Hirano

Daichi Takaki

Daiju Shiono

Takayoshi Mori

Yoshiyuki Utsumi

Masatoshi Arai

Kotaro Endo

Masafumi Fujisaki

Takahiro Dazai

Yoshitaka Komuro

Yoichi Hori

Yuta Iwasawa

Keiichi Ibata

Rikita Tsunoda

Tsuyoshi Nakamura

Hiroaki Shimizu

Akiya Kawaue

Takehiro Seshimo

Tasuku Matsumiya

Takashi Nagamine

Hideto Nito

Yusuke Suzuki

Isao Hirano

Kazuishi Tanno

Naoto Motoike

Toshiaki Hato

Takaaki Kaiho

Miki Shinomiya

Tomonari Sunamichi

A hard mask-forming composition which forms a hard mask used in lithography, including: a resin containing an aromatic ring and a polar group; and a compound containing at least one of an oxazine ring fused to an aromatic ring, and a fluorene ring.

Hard mask-forming composition and method for manufacturing electronic component

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1), a constitutional unit (a02) represented by Formula (a0-2), and a constitutional unit (a03) which is represented by Formula (a0-3) and has a structure different from the constitutional unit (a02). 

Resist composition and method of forming resist pattern

A resist composition which generates an acid when exposed and whose solubility in a developer is changed by an action of an acid, the resist composition including: a base material component (A) whose solubility in a developer is changed by an action of an acid, in which the base material component (A) comprises a polymer compound (A1) having a constitutional unit (a01) represented by Formula (a0-1) and a constitutional unit (a1) which comprises an acid-decomposable group whose polarity is increased due to an action of an acid, and the constitutional unit (a1) comprises a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-1) and a constitutional unit containing an acid-dissociable group represented by Formula (a1-r-2). 

A method of recovering a defect portion of a resist pattern formed on a substrate including applying a shrinking agent composition so as to cover the resist pattern having the defect portion; forming a developing solution-insoluble region on the surface of the resist pattern; and developing the covered resist pattern, the shrinking agent composition including a polymeric compound (X) which is a homopolymer or a random copolymer.

Method of recovering resist pattern

A method of forming a resist pattern including forming a first resist pattern on a substrate; applying a cross-linking composition so as to cover the first resist pattern; heating the covered first resist pattern and crosslinking an isocyanate group in the cross-linking composition with the first resist pattern; and developing the covered first resist pattern, wherein the cross-linking composition includes a blocked isocyanate compound having a protected isocyanate group.

Method of forming resist pattern

A method of forming a resist pattern, including: step A in which a first resist pattern is formed on a substrate, step B in which a basic composition is applied to cover the first resist pattern, step C in which a base contained in the basic composition and the first resist pattern are neutralized to form a developing solution insoluble region on a surface of the first resist pattern, and step D in which the covered first resist pattern is developed, the basic composition containing a basic component, and the basic component containing a polymeric compound having a structural unit (x0) represented by general formula (x0-1) (R is H, Calkyl group, Chalogenated alkyl group; Vxis divalent hydrocarbon group having ether bond or amide bond or divalent aromatic hydrocarbon group; Yxis single bond or divalent linking group; Rxis substituent having nitrogen atom). 

A method of producing a copolymer, including copolymerizing a monomer (am0) containing a partial structure represented by formula (am0-1) shown below, a monomer (am1) containing an acid decomposable group which exhibits increased polarity by the action of acid and a monomer (am5) containing an &#x2014;SO&#x2014; containing cyclic group in the presence of a nitrogen-containing compound (X) having a conjugated acid with an acid dissociation constant of less than 10 (in the formula, *0 to *4 each represents a valence bond). 

Method of producing polymeric compound, resist composition and method of forming resist pattern

A polymeric compound having a structural unit represented by general formula (a0-1), and a resist composition containing the same (in which R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Vaand Vaeach independently represents a hydrocarbon group of 2 to 10 carbon atoms; Va-La&#x2014; represents Va-C(&#x2550;O)O&#x2014; or Va-OC(&#x2550;O)&#x2014;; Rarepresents an acid dissociable, branched hydrocarbon group of 8 or more carbon atoms, an acid dissociable, monocyclic hydrocarbon group of 4 or more carbon atoms, or an acid dissociable, polycyclic hydrocarbon group, provided that methyl adamantyl group is excluded. 

Resist composition, method of forming resist pattern, compound, and polymeric compound

A resist pattern formation method with enhanced resolution and process margin in forming a resist pattern. The method includes using a resist composition containing a high-molecular weight compound having a constituent unit represented by the general formula (a0-1) and conducting patterning by negative type development with a developing solution containing an organic solvent to forma resist pattern in which R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Varepresents a divalent hydrocarbon group; nis an integer of 0 to 2; Rrepresents a chain or cyclic aliphatic hydrocarbon group; Rrepresents a group for forming a monocyclic group together with the carbon atom to which Ris bonded; and Rrepresents an optionally substituted cyclic group.

Method for forming resist pattern and resist composition

A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of the acid contains a high-molecular weight compound (A1) having a constituent unit (a0) represented by a general formula (a0-1) and a constituent unit (a1-1) including a monocyclic group-containing acid decomposable group whose polarity increases by the action of an acid. In the formula (a0-1), R represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms; Yarepresents a single bond or a divalent linking group; Xrepresents a sulfur atom or an oxygen atom; and Rarepresents an optionally substituted cyclic group, chain alkyl group, or chain alkenyl group. 

Resist composition and resist pattern forming method

A method for forming a negative type resist pattern having a high residual film rate of exposed areas of a resist film by heating an exposed resist film and subjecting it to patterning by negative type development with a developing solution containing an organic solvent, in which a resist composition containing a high-molecular weight compound having a constituent unit represented by a particular general formula.

Method for forming resist pattern

A resist composition comprising a compound (m0) (wherein Rbrepresents an electron withdrawing group; Rband Rbeach independently represents an aryl group, an alkyl group or an alkenyl group, provided that Rband Rbmay be mutually bonded to form a ring with the sulfur atom; and X0represents a monovalent counteranion). 

Resist composition, compound, polymeric compound and method of forming resist pattern

A resist composition including a high-molecular weight compound having a constituent unit represented by general formula (a0-1), a constituent unit (a1) containing a group containing a monocyclic group or a chain group among acid decomposable groups whose polarity increases by action of acid, a constituent unit (a1') containing a group containing a polycyclic group among acid decomposable groups whose polarity increases by the action of an acid, and a constituent unit (a2) containing a lactone-containing monocyclic group, with a proportion of the constituent unit (a1) being equal to a proportion of the constituent unit (a1&#x2032;) or more; and a method for forming a resist pattern using the resist composition. 

Resist composition and method for forming resist pattern

A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, wherein the base component (A) includes a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In the formula (a5-1), R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; each of Rand Rindependently represents a hydrocarbon group which may have a substituent, and Rand Rmay be mutually bonded to form a ring. 

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Kawasaki, Japan

Junichi Tsuchiya