Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Renesas Electronics Corporation

Ryoden Semiconductor System Engineering Corporation

Junichi Tsuchimoto

Kiyoshi Mori

Yutaka Inaba

Masao Inoue

Tamotsu Ogata

Jiro Yugami

Hiroshi Umeda

Shimpei Tsujikawa

Masaharu Mizutani

Masami Matsumoto

Yasuhiko Akamatsu

Kouji Nomura

Masami Shirosaki

Hiroshi Ohnishi

Shigeki Nakajima

Yoshikazu Ohno

Akinobu Teramoto

Kazuhiro Aihara

Kazutoshi Wakao

Yoshihiko Okamoto

Kenichi Hanaoka

Tadashi Yoshida

Tamotu Ogata

The manufacturing method of the CMOS type semiconductor device which can suppress the boron penetration from the gate electrode of the pMOS transistors to the semiconductor substrate in the case that boron is contained in the gate electrodes, while enabling the improvement in the NBTI lifetime of the pMOS transistors, without degrading the performance of the nMOS transistors, is offered. The manufacturing method of the CMOS type semiconductor device concerning the present invention has the following process steps. Halogen is introduced to the semiconductor substrate of pMOS transistor formation areas. Next, a gate insulating film is formed on the semiconductor substrate of the pMOS transistor formation areas. Next, nitrogen is introduced to the gate insulating film.

Manufacturing method of CMOS type semiconductor device, and CMOS type semiconductor device

In a semiconductor device comprising a cylindrical storage node, the surface area of the storage node is increased by forming silicone grains in an amorphous silicone film by a heat treatment only to an outer wall of the cylindrical portion to thereby form a roughened surface in the outer wall, and the amorphous silicone film is left in an inner wall without conducting a surface roughening treatment to the inner wall whereby the physical strength of the cylindrical portion is maintained and the destruction and the breakage of the cylindrical portion are prevented.

Semiconductor device and method for producing a semiconductor device

A semiconductor device includes an n-type semiconductor substrate including a source region and a drain region in a main surface thereof, a high-permittivity insulator film including a high permittivity material and formed to cover an upper side of a region of the main surface of n-type semiconductor substrate, which region is interposed between source region and drain region. And the semiconductor device includes a boron-doped gate electrode formed above high-permittivity insulator film, and a high-permittivity nitride layer formed between high-permittivity insulator film and boron-doped gate electrode.

Semiconductor device including nitride layer

A semiconductor device with a capacitor having a charge retaining capability improved by preventing generation of a leakage current in a capacitor dielectric film, and a manufacturing method of the same are provided. An indium oxide film is formed to continuously cover the upper surfaces of a tungsten film and an interlayer oxide film. A tantalum oxide film is formed to continuously cover the surface of the indium oxide film and a portion of the upper surface of the interlayer oxide film. Another indium oxide film is formed to cover the upper surface of the tantalum oxide film.

Semiconductor device and manufacturing method thereof

Improvements are realized in the coverage characteristics of a cell plate electrode with respect to a cylindrical storage node electrode which has a high aspect ratio (height/diameter) and a surface having minute irregularities formed thereon, thereby improving the electrical characteristics and reliability of a semiconductor device. The semiconductor device is manufactured through a step of forming a first cell plate electrode film on a cylindrical storage node electrode, a process of implanting conductive impurities into the first cell plate electrode film, and a process of forming a second cell plate electrode film on the first cell plate electrode film.

After a bottom electrode,of a capacitor is formed, a nitride film as an insulating film,of the capacitor is formed on the bottom electrode,by CVD. Then, the insulating film,is wet-oxidized at a temperature in a range of 700&deg; C. to 760&deg; C. Finally, a top electrode,of the capacitor is formed on the insulating film,The insulating film,forming step includes a substep of increasing the temperature of a silicon wafer to a CVD reaction temperature in an ammonia atmosphere.

Manufacturing method of a semiconductor device

Semiconductor device having stacked capacitor structure

A method of manufacturing a semiconductor device including a capacitor having an increased capacity with improved yield is provided. Ions are implanted at an incidence angle of 0&deg; in a dose of 8&times;10,atom/cm,, at an energy of 20 keV, using a heavy current device and an amorphous silicon film having an upper surface flattened is formed. Only the flattened amorphous silicon film formed on the upper surface of an interlayer oxide film is etched back to form a storage electrode.

Method of manufacturing semiconductor device

An amorphous silicon film is formed on an interlayer insulating film to cover an upper surface of the interlayer insulating film, and a side surface and a bottom surface of an opening formed at the interlayer insulating film. Phosphorus ions are implanted into the amorphous silicon film. The phosphorous ions are implanted into the amorphous silicon film located on the upper surface of the interlayer insulating film to prevent crystal grains from growing, and thus a polysilicon film having no hemispherical grains is formed. Accordingly, a semiconductor device having capacitors with respective storage nodes adjacent to each other that are electrically isolated properly is obtained.

A polysilicon film having a rough surface is formed by a reduced pressure CVD method at a temperature of 575.degree. C. and a deposition pressure of 0.2 Torr. Silicon ions are implanted into the polysilicon film having a rough surface. Thus, the tips of concaves and convexes at the rough surface of the polysilicon film are rounded. Then, this polysilicon film having a rough surface is patterned to form a storage node. A cell plate is formed to cover the storage node with a capacitor insulating layer therebetween. Consequently, a semiconductor device capable of suppressing leak current between capacitor electrodes can be manufactured.

Method of manufacturing a semiconductor device having a capacitor

A capacitor lower electrode is formed so as to be connected to a main surface of a silicon substrate. The capacitor lower electrode includes a plug portion, a bottom wall portion, and a vertical wall portion. An insulation layer for suppressing crystallization of the vertical wall portion is formed between the bottom wall portion and the vertical wall portion. A capacitor upper electrode is formed on the capacitor lower electrode with a capacitor dielectric layer therebetween.

Semiconductor memory device and fabrication method thereof

It is an object to obtain a semiconductor device free from a necessity of stacking a contact hole and a lower electrode, thus preventing occurrence of an error in stacking and enabling the capacitor to be formed precisely. Amorphous silicon 10b is deposited on a interlayer insulating film 9 including the inside portion of the contact hole 9a, and then a resist 14 is applied to the amorphous silicon 10b. Then, a mask for photolithography which has been used to form the contact hole 9a is used to perform a photolithography process to form the resist 14 to have a required shape. Then, implantation of phosphorus ions is performed such that the resist 14 is used as a mask 14a for preventing implantation of ions. Then, the amorphous silicon 10b is subjected to heat treatment to partially single crystallize the amorphous silicon 10b so that single crystal silicon 10c is grown. The difference in the etching rate between the amorphous silicon 10b and the single crystal silicon 10c is used to selectively remove the amorphous silicon 10b by using dry etching technique so that a storage node 10 is formed.

Method of manufacturing a semiconductor device having a single crystal

An amorphous silicon conductive film on a semiconductor wafer is treated with hydrofluoric acid to remove a natural oxide film therefrom, and then a very thin oxide film is formed on the semiconductor wafer. Thereafter, a silane gas is used to form a nucleating film, followed by annealing to cause the surface of the conductive film be roughened. The very thin oxide film is formed in a thickness of 0.5 angstroms to 20 angstroms. The very thin oxide film is alternatively formed either by treatment with an aqueous hydrofluoric acid solution or by flushing treatment. Thus, a roughened surface having a satisfactory roughness is uniformly formed on the surface of a conductive film on a semiconductor wafer.

Method for forming a surface-roughened conductive film on a

In the semiconductor device according to the invention, a tubular storage node is formed, then slanting rotation implantation of impurity phosphorus ions is executed for changing the phosphorus concentration and the etching rate at the thermal phosphoric acid treatment time is changed for roughening the surface under good control. Since the surface roughening does not extend to the center of the film of the storage node, the strength of the storage node can be held sufficient. Therefore, the capacitance can be increased.

Growing community of inventors

Tokyo, Japan

Junichi Tsuchimoto