Tanaka Kikinzoku Kogyo K.k.

National Institute of Advanced Industrial Science and Technology

Osaka Prefecture University Public Corporation

University Public Corporation Osaka

Tanaka Kikinzoku Kogoy K.k.

Japan Atomic Energy Agency

A School Corporation Kansai University

National Institutes for Quantum and Radiological Science and Technology

Junichi Taniuchi

Yasushi Masahiro

Hitoshi Kubo

Koji Okamoto

Yuusuke Ohshima

Hideo Konno

Noriaki Nakamura

Masayuki Saito

Yuichi Makita

Rumi Kobayashi

Ryosuke Harada

Toshiyuki Shigetomi

Tomoko Ishikawa

Chihiro Nakanishi

Hidekazu Matsuda

Shigeyuki Yagi

Junji Ohnishi

Minoru Ishida

Hirofumi Nakagawa

Yasunobu Komoda

Takeshi Tozawa

Yusuke Ohshima

Hiroaki Takahashi

Hiroaki Suzuki

Dai Shinozaki

Kenichi Inoue

Yuko Ohnishi

Kenji Matsuda

Hidenori Takanezawa

Syunsuke Kato

Hirokazu Shiraishi

Yukie Masuda

Hiroshi Noguchi

Shoso Shingubara

Fumihiro Inoue

Hirosi Noguchi

Yasunori Iwai

Yoshiteru Tsuchiya

Katsumi Sato

The present invention relates to an organoiridium complex for an organic electroluminescent element in which a C—N ligand and an ancillary ligand are coordinated with iridium. This organoiridium complex contains a 2-(dibenzo[b,d]thiophen-4-yl)quinolinate ligand having at least one methyl group introduced thereinto coordinated as the C—N ligand, and is represented by the following Formula. The present inventive organoiridium complex is suitable as a red emitting phosphorescent material for an OLED, has high photoluminescence quantum yield Φ, and is excellent in color purity. (In the aforementioned Formula, R, R, R, R, R, R, and Rare each a methyl group or a hydrogen atom, provided that at least one of R, R, R, Ris a methyl group; and X—Y is the ancillary ligand.)

Organoiridium complex for organic electroluminescent elements

The present invention provides a method for producing a cyclometalated iridium complex, the method including producing a cyclometalated iridium complex by reacting a cyclometalated iridium complex raw material including an organoiridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond and an iridium-nitrogen bond, and using as the raw material an organoiridium compound including a substructure represented by the following General Formula (1). The present invention is capable of producing a cyclometalated iridium complex with a high yield without by-production of a halogen-crosslinked iridium dimer.  (in General Formula (1), Ir represents an iridium atom, and O represents an oxygen atom).

Method for producing cyclometalated iridium complex

A method for producing a halogen-crosslinked iridium dimer with increased purity that is used as a precursor in production of a cyclometalated iridium complex useful as a phosphorescent material for organic electroluminescent devices, organic electrochemiluminescent devices, luminescent sensors, photosensitizing pigments, photocatalysts, luminescent probes, various light sources, and the like. The halogen-crosslinked iridium dimer is represented by the following formula: In this formula, each X represents a halogen atom, each CyA represents an optionally substituted five- or six-membered cyclic ring containing nitrogen atoms, and is linked to iridium via the nitrogen atoms, and each CyB represents an optionally substituted five- or six-membered ring containing carbon atoms, and is linked to iridium via the carbon atoms. CyA and CyB can be linked together to form an optionally substituted ring.

Method for producing halogen-crosslinked iridium dimer

The present invention provides a method for producing a cyclometalated iridium complex, the method including producing a cyclometalated iridium complex by reacting a cyclometalated iridium complex raw material including an organoiridium material with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond and an iridium-nitrogen bond, and using as the raw material an organoiridium material represented by the following general formula (1). The present invention allows a cyclometalated iridium complex to be produced with a high yield without by-production of a halogen-crosslinked iridium dimer. 

Method for producing cyclometalated iridium complex, and cyclometalated iridium complex precursor including organoiridium material

The present invention provides a method for producing a cyclometalated iridium complex by use of a non-chlorine iridium raw material. The method for producing a cyclometalated iridium complex includes producing a cyclometalated iridium complex by reacting a raw material including an iridium compound with an aromatic heterocyclic bidentate ligand capable of forming an iridium-carbon bond, the raw material being non-halogenated iridium having a conjugated base of a strong acid as a ligand. Here, the non-halogenated iridium is preferably one containing a conjugated base of a strong acid having a pKa of 3 or less as a ligand.

The present invention provides a method for producing silver particles, including the steps of: mixing a thermally decomposable silver compound and an amine compound to prepare a silver-amine complex as a precursor; and heating the silver-amine complex at a heating temperature equal to or higher than the decomposition temperature of the silver-amine complex to precipitate silver particles, the silver compound being silver carbonate, the amine compound being terminated with a primary amino group on at least one end and containing a predetermined hydrocarbon group R with a carbon number of 4 to 10. In the method of the present invention, silver particles with the particle size controlled to fall within the range of 20 nm to 200 nm in terms of an average particle size can be produced.HN&#x2014;R&#x2003;&#x2003;[Chemical Formula 1]

Method for producing silver particles, and silver particles produced by the method

The present invention is a metal colloid solution comprising: colloidal particles consisting of metal particles consisting of one or two or more metal(s) and a protective agent bonding to the metal particles; and a solvent as a dispersion medium of the colloidal particles, wherein: a chloride ion concentration per a metal concentration of 1 mass % is 25 ppm or less; and a nitrate ion concentration per a metal concentration of 1 mass % is 7500 ppm or less. In the present invention, adsorption performance can be improved with adjustment of the amount of the protective agent of the colloidal particles. It is preferable to bind the protective agent of 0.2 to 2.5 times the mass of the metal particles.

Metal colloidal solution and method for producing the same

A method for manufacturing tris(&#x3b2;-diketonato)iridium by reacting &#x3b2;-diketone with an iridium compound, in which an activation treatment including (a) an alkali treatment and (b) an acid treatment described below is applied to the iridium compound to activate the iridium compound, and to subsequently react the &#x3b2;-diketone, (a) an alkali treatment: a treatment of adding alkali to a solution of the iridium compound to raise pH of the solution to a more alkaline side than that before the alkali addition and to not less than 10, and (b) an acid treatment: a treatment of adding acid to the solution subjected to the alkali treatment to lower pH of the solution to a more acidic side than that before the acid addition and to make the pH difference between solutions before and after the acid addition be not less than 0.1 and not more than 10. The present invention allows manufacture of tris(&#x3b2;-diketonato)iridium utilizing a wide variety of &#x3b2;-diketones.

Method for manufacturing iridium complex

The present invention relates to a raw material for a cyclometalated iridium complex, and provides a technique that makes it possible to obtain a cyclometalated iridium complex in higher yield at a lower reaction temperature than using tris(2,4-pentanedionato)iridium(III). The present invention relates to a raw material for a cyclometalated iridium complex, including an organic iridium material for producing a cyclometalated iridium complex, the organic iridium material being a tris(&#x3b2;-diketonato)iridium(III), in which an asymmetric &#x3b2;-diketone is coordinated to iridium.

Raw material and production method for cyclometalated iridium complex

The present invention provides a method for producing silver particles, the method capable of adjusting the particle diameter to be within the range of several tens of nanometers to several hundreds of nanometers and also producing silver particles with a uniform particle diameter. The present invention relates to a method for producing silver particles by heating of a reaction system containing a thermally-decomposable silver-amine complex precursor, including a process of producing a silver-amine complex, a process of adding an organic compound having an amide (carboxylic amide) as a skeleton to a reaction system, and a process of heating the reaction system, in which a water content in the reaction system before the heating is 20 to 100 parts by weight relative to 100 parts by weight of the silver compound. The present invention can produce uniform silver particles while the particle diameter is controlled.

Method for manufacturing silver particles

The present invention provides an organometallic complex having a high quantum efficiency even in a polymer thin film as a emitting material for organic electroluminescent (EL) element. The present invention relates to an organoiridium complex for an organic electroluminescent element represented by the following Formula; wherein a C&#x2014;N ligand including two atomic groups (A, A), and a &#x3b2;-diketone ligand in line symmetry having two tert-butyl-substituted phenyl groups are coordinated with an iridium atom. The organoiridium complex of the present invention has a high quantum efficiency even in a polymer thin film with respect to green to yellow electroluminescence. (In the aforementioned Formula, R, R, and Rare each a tert-butyl group or a hydrogen atom, and have at least one tert-butyl group; they may bond each other to thereby form a saturated hydrocarbon ring, when having two tert-butyl groups; A, Aare each an unsaturated hydrocarbon ring, at least one is a single ring, and at least one is a heterocyclic ring).

The present invention provides an organic metal complex having high heat resistance while making it possible to realize electroluminescence with high quantum efficiency as a light-emitting material for organic electroluminescent (EL) element. The present invention relates to an organic iridium complex for an organic EL element, wherein a C&#x2014;N ligand including a substituent of a tricyclic-based structure obtained by condensing a heterocyclic ring and two benzene rings, and a &#x3b2;-diketone ligand composed of a propane-1,3-dione having two tert-butyl-substituted phenyl groups are coordinated with an iridium atom. The complex of the present invention has high heat resistance and contributes to lifetime prolongation of the organic EL element.

Organic iridium complex for organic electroluminescent element

Provided are a fine silver particle ink composed of hexylamine, dodecylamine, oleic acid, fine silver particles and a solvent, in which the volume resistivity of a sintered body at 100&#xb0; C. obtained after the ink is applied on a substrate by spin coating is 8 to 25 &#x3bc;&#x3a9;cm, a sintered body thereof, and a method for producing a fine silver particle ink. When a fine silver particle ink containing coated fine silver particles is produced by a silver-amine complex decomposition method, production can be carried out smoothly. The fine silver particle ink can be sintered even at a low temperature, and a sintered body thereof has a mirror surface and low volume resistance.

Fine silver particle ink, fine silver particle sintered body, and method for producing fine silver particle ink

A semiconductor device includes a semiconductor chip which can be a heat-generating semiconductor chip or a semiconductor relay substrate in which an integrated circuit or wiring is built in. A sintered-silver-coated film is adhered on a surface layer part of the semiconductor substrate, interposed by a silicon oxide film. A heat-dissipating fin (heat sink), which may be copper or aluminum, is bonded on the sintered-silver-coated film, interposed by an adhesive layer.

Semiconductor device and heat-dissipating mechanism

The present invention provides a method for treating a substrate that supports metal fine particles for forming a plating layer on a circuit pattern or TSVs in various substrates, in which further micronization treatment is enabled compared with the conventional methods, and the formation of a stable plating layer is enabled. The present invention is a method for treating a substrate, the method including bringing a substrate into contact with a colloidal solution containing metal particles in order to support the metal particles that serve as a catalyst for forming a plating layer on the substrate, in which the colloidal solution contains metal particles formed of Pd and having a particle size of 0.6 nm to 4.0 nm and a face-to-face dimension of the (111) plane of 2.254 &#x212b; or more. When an organic layer such as SAM is formed on a surface of the substrate before this treatment, the binding force of the Pd particles can be increased.

Method for treating substrate that support catalyst particles for plating processing

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Tsukuba, Japan

Junichi Taniuchi