Panasonic Holdings Corporation

Osaka University

Panasonic Corporation

Junichi Takino

Masashi Yoshimura

Yusuke Mori

Masayuki Imanishi

Akira Kitamoto

Tomoaki Sumi

Yoshio Okayama

Shunichi Matsuno

Masayuki Hoteida

Shigeyoshi Usami

A group-III nitride substrate includes: a first region having a first impurity concentration in a polished surface; and a second region having a second impurity concentration lower than the first impurity concentration in the polished surface, wherein a first dislocation density of the first region is lower than a second dislocation density of the second region.

Group-III nitride substrate

A manufacturing apparatus for a group-III nitride crystal, the manufacturing apparatus includes: a raw material chamber that produces therein a group-III element oxide gas; and a nurturing chamber in which a group-III element oxide gas supplied from the raw material chamber and a nitrogen element-containing gas react therein to produce a group-III nitride crystal on a seed substrate, wherein an angle that is formed by a direction along a shortest distance between a forward end of a group-III element oxide gas supply inlet to supply the group-III element oxide gas into the nurturing chamber and an outer circumference of the seed substrate placed in the nurturing chamber, and a surface of the seed substrate is denoted by 'θ', wherein a diameter of the group-Ill element oxide gas supply inlet is denoted by “S”, wherein a distance between a surface, on which the seed substrate is placed, of a substrate susceptor that holds the seed substrate and a forward end of a first carrier gas supply inlet to supply a first carrier gas into the nurturing chamber is denoted by “L”, wherein a distance between the forward end of the first carrier gas supply inlet and the forward end of the group-III element oxide gas supply inlet is denoted by “M”, wherein a diameter of the seed substrate is denoted by “k”, and wherein following Eqs. (1) to (4), 0°<θ<90° (1), 0.21≤S/k≤0.35 (2), 1.17≤(L+M)/k≤1.55 (3), k=2*(L+M)/tan θ+S (4) are satisfied.

Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate

A manufacturing method for a group-III nitride crystal, the manufacturing method includes: preparing a seed substrate; increasing temperature of the seed substrate placed in a nurturing chamber; and supplying a group-III element oxide gas produced in a raw material chamber connected to the nurturing chamber by a connecting pipe and a nitrogen element-containing gas into the nurturing chamber to grow a group-III nitride crystal on the seed substrate, wherein a flow amount y of a carrier gas supplied into the raw material chamber at the temperature increase step satisfies following two relational equations (I) and (II), y<[1−k*H(Ts)]/[k*H(Ts)−j*H(Tg)]*j*H(Tg)*t (I), y≥1.58*10*(22.4/28)S*F(N)/F(T) (II), wherein k represents an arrival rate to a saturated vapor pressure of a group-III element in the raw material chamber, Ts represents a temperature of the raw material chamber, Tg represents a temperature of the nurturing chamber, H(Ts) represents a saturated vapor pressure of the group-III element at the temperature Ts in the raw material chamber, H(Tg) represents a saturated vapor pressure of the group-III element at the temperature Tg in the nurturing chamber, j represents a corrective coefficient, t represents a sum of gas flow amounts flowing into the nurturing chamber from those other than the raw material chamber, S represents a cross-sectional area of the connecting pipe, F(N) represents a volumetric flow amount of the nitrogen element-containing gas supplied into the nurturing chamber, and F(T) represents a sum of volumetric flow amounts of gases supplied into the nurturing chamber from those other than the raw material chamber.

Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)

A method of manufacturing a group III nitride crystal according to a first aspect includes: preparing a seed substrate; generating a group III element oxide gas; supplying the group III element oxide gas; supplying a nitrogen element-containing gas; supplying an oxidizing gas containing nitrogen element containing at least one selected from the group consisting of NO gas, NOgas, NO gas, and NOgas; and growing the group III nitride crystal on the seed substrate.

Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate

A method of manufacturing a group-III nitride crystal includes: preparing a seed substrate; and supplying a group-III element oxide gas and a nitrogen element-containing gas at a supersaturation ratio (P/P) greater than 1 and equal to or less than 5, then, growing a group-III nitride crystal on the seed substrate, wherein the Pis a supply partial pressure of the group-III element oxide gas, and the Pis an equilibrium partial pressure of the group-III element oxide gas.

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a hydrogen element, and the concentration of the N-type dopant is 1&#xd7;10cmor more, and the concentration of the hydrogen element is 1&#xd7;10cmor more.

Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal

A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1&#xd7;10cmor more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.

A group-III nitride substrate includes: a base material part of a group-III nitride including a front surface, a back surface, and an inner layer between the front surface and the back surface, wherein the carbon concentration of the front surface of the base material part is higher than the carbon concentration of the inner layer.

Group-III nitride substrate containing carbon at a surface region thereof

An apparatus for producing a Group-III nitride semiconductor crystal includes a raw material reaction chamber, a raw material reactor which is provided in the raw material reaction chamber and configured to generate a Group-III element-containing gas, a board-holding member configured to hold a board in the raw material reaction chamber, a raw material nozzle configured to spray the Group-III element-containing gas toward the board, a nitrogen source nozzle configured to spray a nitrogen element-containing gas toward the board, in which, in a side view seen in a direction perpendicular to a vertical direction, a spray direction of the nitrogen source nozzle intersects with a spray direction of the raw material nozzle before the board, and a mixing part in which the Group-III element-containing gas and the nitrogen element-containing gas are mixed together is formed around the intersection as a center, a heater, and a rotation mechanism.

Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions

Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 5

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Osaka, Japan

Junichi Takino