Central Research Institute of Electric Power Industry

National Institute of Japan Science and Technology Agency

Junichi Takeya

Shimpei Ono

Shiro Seki

An organic field-effect transistor normally includes: a source electrode and a drain electrode; an organic semiconductor layer in contact with the source electrode and the drain electrode; a gate insulating layer adjacent to the organic semiconductor layer; and a gate electrode in contact with the gate insulating layer. The gate insulating layer according to the present invention is in a liquid state, constituted with a material containing no glue or thickener, a sole or main component of which is an ionic liquid. Thus the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher. As a result, an organic field-effect transistor capable of operating at low voltage and assuring ample current gain and high-speed response (the capacitance of the ionic liquid corresponding to a gate voltage modulation frequency of 10 Hz is reduced to 1/10 at a frequency of 10 kHz of higher) is provided.

Growing community of inventors

Toyonaka, Japan

Junichi Takeya