The University of Tokyo

Fujifilm Corporation

Osaka University

Daicel Corporation

Pi-crystal Incorporation

Jnc Corporation

Pi-crystal Inc.

Toppan Forms Co., Ltd.

Denso Corporation

Basf Se Corporation

Osaka Research Institute of Industrial Science and Technology

Junichi Takeya

Toshihiro Okamoto

Yoshihisa Usami

Tetsuya Watanabe

Hiroaki Tsuyama

Eiji Fukuzaki

Masashi Koyanagi

Yukio Tani

Tetsu Kitamura

Kimiatsu Nomura

Yasuyuki Akai

Hiroyuki Matsui

Masatoshi Yumoto

Daiji Ikeda

Tadanori Kurosawa

Takashi Goto

Takafumi Uemura

Mayumi Uno

Takeshi Yokoo

Yu Yamashita

Seiichiro Yamaguchi

Masataka Itoh

Shunichiro Watanabe

Yuichiro Itai

Seigo Nakamura

Yoshiki Maehara

Kenji Shirokane

Fumiko Tamakuni

Tauto Nakanishi

Yuki Owashi

Takayoshi Yokoyama

Junshi Soeda

Koki Nakamura

Takashi Inoue

Thomas Gessner

Hiroki Sugiura

Kazuki Maeda

Thomas Weitz

Tetsuya Matsushita

Takeshi Matsushita

Tetsuya Katoh

Kenichi Sakai

Keita Yaegashi

Kensuke Hata

Takafumi Matsumoto

Masashi Nitani

Norikazu Shomoto

Mina Uematsu

Masayuki Kishi

Chikahiko Mitsui

Masato Mitani

Busang Cha

Tatsuyuki Makita

Dinghai Cen

Yosuke Ito

Tomonori Matsumuro

Provided is a compound that is excellent in chemical stability, has high solubility in a solvent, and exhibits excellent carrier mobility. A compound represented by Formula (1):

Compound and application thereof

Provided are an organic thin film transistor, an organic semiconductor film, a compound, an organic thin film transistor-forming composition, and a method of manufacturing the organic thin film transistor. The organic thin film transistor includes the organic semiconductor film. The organic semiconductor film includes a compound represented by a specific formula. The organic semiconductor film, the compound, and the organic thin film transistor-forming composition can be preferably used in the organic thin film transistor. The method of manufacturing the organic thin film transistor includes a step of forming an organic semiconductor film by applying the organic thin film transistor-forming composition to a substrate.

Organic thin film transistor, organic semiconductor film, compound, organic thin film transistor-forming composition, and method of manufacturing organic thin film transistor

The method for producing an electrically conductive polymer material includes: a preparing step of providing a polymer film formed from an oriented polymeric semiconductor; and a doping step of introducing a first ion into the polymer film, in the doping step, a treatment liquid, which is obtained by dissolving, in an ionic liquid including the first ion having the opposite polarity to carriers to be injected into the polymeric semiconductor by doping in the form of a cation and an anion or an organic solvent having dissolved therein a salt including the first ion, a dopant which has the same polarity as that of the first ion and which oxidizes or reduces the polymeric semiconductor, is allowed to be in contact with the surface of the polymer film to form an intermediate of a second ion formed by ionization of the dopant and the polymeric semiconductor by a redox reaction, and to replace the second ion in the intermediate with the first ion.

Electrically conductive polymer material and method for producing same, polymer film and method for producing same, electrically conductive polymer film, photoelectric conversion element, and field effect transistor

The present disclosure provides fine electrodes in which an organic semiconductor does not easily change with time, and which can be applied to manufacturing of a practical integrated circuit of an organic semiconductor device. The present disclosure relates to electrodes for source/drain of an organic semiconductor device, comprising 10 or more sets of electrodes, wherein a channel length between the electrodes in each set is 200 μm or less, and the electrodes in each set have a surface with a surface roughness Rq of 2 nm or less.

Electrode for source/drain of organic semiconductor device, organic semiconductor device using same, and method for manufacturing same

Provided is a conductor material having high conductivity. The conductor material according to an embodiment of the present disclosure has a configuration in which a conjugated polymeric compound having an electron donating group containing a heteroatom in a side chain is doped with a dopant containing an anion selected from a nitrogen anion, a boron anion, a phosphorus anion and an antimony anion, and a counter cation. The anion is preferably an anion represented by Formula (1) below: where Rand Rare identical or different, and each represent an electron withdrawing group; and Rand Rmay be bonded to each other to form a ring with an adjacent nitrogen atom.

Conductor material

An organic semiconductor element of the present invention includes: an organic semiconductor film formed from single crystal of an organic semiconductor, and a doped layer formed in a surface of the organic semiconductor film. A strain sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which is deformable, and which has the organic semiconductor element formed on one surface thereof. A vibration sensor of the present invention includes: the organic semiconductor element, a pair of electrodes which are electrically connected through the doped layer, and a substrate which has flexibility, and which is fixed at one end or both ends thereof, the substrate having the organic semiconductor element formed on the surface of the flexible portion of the substrate.

Organic semiconductor element, strain sensor, vibration sensor, and manufacturing method for organic semiconductor element

Provided is a dopant with which a conductor material having high electrical conductivity can be formed. The present disclosure relates to a dopant containing a radical cation represented by Formula (1) and a counter anion. In Formula (1), Rto Rmay be the same or different, and each denotes a monovalent aromatic group or a group represented by Formula (r). at least one of Rto Ris a group represented by Formula (r), and n indicates the valence of the radical cation and is equal to the quantity (n) of nitrogen atoms in the formula. In Formula (r), Ar, Ar, and Armay be the same or different, and each denotes a divalent aromatic group, and Ar, Ar, Ar, and Armay be the same or different, and each denotes a monovalent aromatic group optionally having a substituent represented by Formula (sb) below. Furthermore, m and n may be the same or different, and each represents an integer of 0 or greater.

Dopant and conductor material

A novel dopant according to the present disclosure includes an anion represented by the following Formula (1) and a counter cation. In Formula (1), Rand Rmay be each at least one group selected from a nitro group, a cyano group, an acyl group, a carboxyl group, an alkoxycarbonyl group, a haloalkyl group, a sulfo group, an alkylsulfonyl group, an halosulfonyl group, and a haloalkylsulfonyl group, or may be a group formed by Rand Rbonded to each other [—SO-L-SO—] (where L represents a haloalkylene group). The counter cation may be a radical cation represented by Formula (2), where Rand Rrepresent electron-withdrawing groups that may be bonded to each other to form a heterocycle, and Rto Rrepresent a hydrogen atom, a hydrocarbon group that may have a substituent, or a heterocyclic group that may have a substituent. The dopant is capable of forming an electroconductive composition that shows a high conductivity.

Dopant, electroconductive composition and method for producing same

Electronic devices to be integrated are formed on individual boards, the boards are laid to overlap each other in a predetermined relationship, and then through vias are formed at predetermined positions. With this, the electronic devices are electrically connected to each other, and function as an integrated device.

Laminated circuit board

Provided is a novel chalcogen-containing organic semiconductor compound having excellent carrier mobility. The compound is represented by Formula (1a) or (1b): [Chem. 1]

Chalcogen-containing organic compound, organic semiconductor material, organic semiconductor film, and organic field-effect transistor

An object of the present invention is to provide a composition capable of manufacturing an organic thin film transistor having excellent carrier mobility even under low temperature conditions. The composition of the present invention contains a compound represented by Formula (1) and an alcohol represented by Formula (S1).

Composition

A flexible substrate and an electronic device having high flexibility as a whole including an element mounting portion and a connection terminal portion, and a production method of the electronic device are provided. The flexible substrate includes a flexible base, and a conductive wiring made of a conductive organic compound formed on the base, wherein part of the conductive wiring serves as a connection part with another electronic member. Further, an electronic deviceincludes flexible basesand, conductive wiringsandmade of a conductive organic compound formed on the bases, and electronic elementsandconnected to the conductive wirings, wherein part of the conductive wiring serves as a connection partwith another substrate.

Flexible substrate, electronic device, and method for manufacturing electronic device

An organic semiconductor element in which an organic semiconductor layer contains a compound of Formula (1) and/or a compound of Formula (2) or the organic semiconductor layer contains a polymer having a structure of any one of Formulae (6) to (8):  in which Rings A and B each represent an aromatic 5-membered ring, X represents a nitrogen atom or CR, and Rrepresents a hydrogen atom or a substituent; E represents an oxygen atom or a sulfur atom; Rto Reach represent a specific substituent; and p, q, r, and s each are an integer of 0 to 2; n is 1 or 2; and * represents a bonding site.

Organic semiconductor element, organic semiconductor composition, method of manufacturing organic semiconductor film, organic semiconductor film, and compound and polymer using the same

Described are processes for developing laminated circuit boards, as well as the resulting circuit boards themselves. Accordingly, at least two circuit boards at least partially overlap each other, and at least one through-hole is formed in an overlapping region thereof. The through-hole is filled with an electrically-conductive material, forming a through-via that enables the circuit boards to be electrically connected. When a circuit on each circuit board is laid out so that a part thereof reaches a region in which the through-via is to be formed, then that part of the circuit can be electrically connected to the through-via. Thus, portions of the circuits on the circuit boards can be electrically connected to each other via common through-vias to realize an integrated device in which the circuits on the laminated circuit boards function.

Method for forming laminated circuit board

Growing community of inventors

Tokyo, Japan

Junichi Takeya