Renesas Electronics Corporation

Ricoh Company, Ltd.

Tohoku Ricoh Co., Ltd.

Hitachi Software Engineering Company, Ltd.

Junichi Takahashi

Masaaki Yamada

Yusaku Katsube

Toshihito Habuka

Fumihito Yamaguchi

Hiroshi Yamazaki

Hirotoshi Eguchi

Daisuke Kosaka

Kenichi Shibata

Kouji Izumi

Shoji Matsumoto

Kenichi Tezuka

Takashi Akahori

Takuya Mizokami

Masayuki Tamada

Gain setting can be performed at high speed while reducing DC offset due to a filter cutoff frequency changeover without the need for input signal muting. A filter circuit having first and second filters is capable of allowing settings of first and second cutoff frequencies. First and second filter switch circuits and a charging circuit including a charging resistor and a charging switch are provided. For a first time period, the first switch circuit is controllably turned on while the second switch circuit is controllably turned off, thereby providing the first filter function. For a second time period, the first switch circuit is controllably turned off while the second switch circuit is controllably turned on, thereby providing the second filter function. For the first time period, the charging switch is controllably turned on so that the second capacitor is charged via the charging resistor.

Filter circuit and receiver using the same

The receiver includes a low noise amplifier, a local signal generator, a first mixer, a second mixer, a first amplifier, a second amplifier, a first A/D converter, a second A/D converter, and a signal level detection unit. A detection signal from at least one terminal of the first A/D converter is supplied to an input terminal of the signal level detection unit, thereby generating a reception start signal from the output terminal. Before an RF reception signal is received, a first signal processing unit containing the first mixer, the first amplifier, and the first A/D converter is controlled to an active state, and a second signal processing unit containing the second mixer, the second amplifier, and the second A/D converter is controlled to a low power consumption state. After the RF reception signal is received, the second signal processing unit is controlled to the active state.

Receiver and receiving method of the receiver

A filter circuit includes first capacitors, second capacitors capable of altering a cutoff frequency by being connected in parallel with the first capacitors, first switches for connecting the second capacitors in parallel with the first capacitors, and charging circuits for the second capacitors. The charging circuits include second switches, and resistances for attenuating the amplitudes of input voltages to be fed to the second capacitors, by being connected in series with the second capacitors. The second capacitors are charged through the resistances in a state where the first switches are turned OFF and where the second switches are turned ON. Thus, a DC offset which is ascribable to the cutoff frequency switching of a filter is reduced.

Filter circuit and receiving apparatus

In an additional writing format optical disk library unit or the like, the processing for automatically reorganizing a volume is carried out effectively so as to intend to reuse media. Whether the number of residual blank media surfaces in a volume is small is judged. If the number is small, media surfaces each having a low data valid rate are extracted from the volume. Valid data on the extracted media surfaces is written and added to a medium surface which is currently set as a writing target, so that data relocation is carried out. Media surfaces occupied only by invalid areas are deregistered from the volume. Further, the media surfaces deregistered from the volume are formatted. The formatted media surfaces are re-registered into the volume.

Method for reorganizing additional writing format storage media volume

A semiconductor diffusion type force sensing apparatus includes a plate-like semiconductor substrate formed by a single crystal material, and a plurality of sensing elements each constituted by a substantially rectangular impurity-diffused region formed in the semiconductor substrate. The sensing elements have an electric resistance variable in accordance with a deformation thereof due to an external force exerted on the semiconductor substrate. The sensing elements are arranged in a direction in which a longitudinal direction of each of the sensing elements coincides with a crystal orientation of the semiconductor substrate having an external value of a longitudinal piezoresistance coefficient of the impurity-diffused region.

Semiconductor diffusion type force sensing apparatus

An image sensor driving circuit for driving an image sensor by applying a voltage thereto comprises a voltage supplying circuit for supplying a positive or negative polarity voltage to the image sensor responsive to a control signal, a converting circuit for converting an output photocurrent of the image sensor into a detection voltage, an inverting circuit for inverting the detection voltage responsive to the control signal, and a control circuit for generating the control signal. The control signal has a predetermined period so that the voltage supplying circuit alternately supplies the positive and negative polarity voltages with the predetermined period and the inverting circuit inverts the detection voltage only during one of first and second halves of each period of the control signal.

Image sensor driving circuit

Growing community of inventors

Yokohama, Japan

Junichi Takahashi