Stanley Electric Co., Ltd

Kyoto University

Junichi Sonoda

Seiichiro Kobayashi

Kazuyuki Yoshimizu

Satoshi Kon

Susumu Noda

Yoshinori Tanaka

Kazuki Takeshima

Toshihiko Baba

Takuya Kazama

Menaka De Zoysa

Kei Emoto

Tomoaki Koizumi

A method for manufacturing a surface emitting laser made of a group-III nitride semiconductor by an MOVPE method includes: (a) growing a first cladding layer of a first conductive type on a substrate; (b) growing a first optical guide layer of the first conductive type on the first cladding layer; (c) forming holes having a two-dimensional periodicity in a plane parallel to the first optical guide layer, in the first optical guide layer by etching; (d) supplying a gas containing a group-III material and a nitrogen source and performing growth to form recessed portions having a facet of a predetermined plane direction above openings of the holes, thereby closing the openings of the holes; and (e) planarizing the recessed portions by mass transport, after the openings of the holes have been closed, wherein after the planarizing at least one side surface of the holes is a {10-10} facet.

Surface-emitting laser and method for manufacturing surface-emitting laser

A light emitting device with an increased light extraction efficiency includes a two-dimensional periodic structure in a surface thereof and has two layers that together form an asymmetric refractive index distribution with respect to the active layer, which is in between the two layers. The light emitting device includes a substrate layer, a first layer, an active layer and a second layer that are stacked sequentially. The first layer includes at least one layer, including a semiconductor cladding layer of a first conductivity type. At least one layer of the first layer has a refractive index that is lower than a refractive index of the active layer and lower than a refractive index of a layer of the second layer that is adjacent to the active layer. Each constituent layer of the second layer has a refractive index that is lower than the refractive index of the active layer.

Semiconductor light emitting device

A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a lamination structure including the LED, the first electrode and a second bonding layer. The first or second bonding layer contains at least part of eutectic composition. At least one of the support substrate and the lamination structure includes a diffusion material layer. The composite bonding layer is formed in such a manner that eutectic material contents are mixed with the other to form a first mixture, and that the first mixture is mixed with diffusion material to form a second mixture having a melting point higher than a melting point of the first mixture.

Semiconductor device, its manufacture method and electronic component unit

A ball-up preventive layer is formed on a first substrate. A bonding layer made of eutectic material is formed on the ball-up preventive layer. A semiconductor light emitting structure is formed on a second substrate. A first electrode is formed at least partially on the semiconductor light emitting structure. A barrier layer is formed on the first electrode. A metal layer is formed on the barrier layer. The bonding layer and the metal layer are bonded together. The second substrate is removed from the bonded structure. A second electrode is formed on a partial surface area of the semiconductor light emitting structure exposed on a surface of the bonded structure to obtain a semiconductor light emitting device.

Semiconductor light emitting device and its manufacture

Growing community of inventors

Tokyo, Japan

Junichi Sonoda