The Japan Steel Works, Ltd.

Jsw Aktina System Co., Ltd.

Junichi Shida

Keisuke Washio

Tatsuya Matsumoto

Suk-Hwan Chung

Takashi Ebisawa

Masao Nakata

Shuichi Uryu

Daisuke Ito

Masashi Machida

In a film-forming technology using charged particles, a disturbance in film thickness distribution caused by leakage magnetic field is suppressed. A film-forming method embodies a technological idea of switching generation and stop of a magnetic field during a film-forming operation so as to stop the generation of the magnetic field during a period when plasma is generated and generate the magnetic field during a period when plasma is not generated.

Film-forming method, manufacturing method of electronic device, and plasma atomic layer deposition apparatus

A laser treatment device performing treatment by irradiating a target object having a plate surface with laser light, including: a light-transmitting region transmitting laser light emitted onto the target object; a rectifier that has a rectifier surface separated from the target object and extending along the plate surface of the target object and outward from the end of the light-transmitting region; a gas supply unit that feeds a gas to a gap between one side of the rectifier surface and the light-transmitting region, in a position separated from the light-transmitting region; and a gas exhaust unit that exhausts, on the other side that is on the other side of the light-transmitting region from the one side, the gas present in a gap between the rectifier surface and the target object from the gap, in a position separated from the light-transmitting region, thereby generating a stable local gas atmosphere.

Laser treatment device rectifier device and laser treatment device

A method of manufacturing a display device having an organic EL device includes the steps of: forming an organic EL device over a substrate; and forming a protection film so as to cover the organic EL device. The protection film is made of a laminated film of a first insulating film containing Si, a second insulating film containing Al and a third insulating film containing Si. The step of forming the protection film includes the steps of: forming the first insulating film by a plasma CVD method so as to cover the organic EL device; forming the second insulating film over the first insulating film by an ALD method; and forming the third insulating film over the second insulating film by a plasma CVD method.

Method of forming protection film for organic EL device, method of manufacturing display device and display device

A method of manufacturing a display apparatus having an organic EL element includes: a step of forming the organic EL element over a substrate made of a flexible substrate; and a step of forming a protecting filmmade of an inorganic insulating material so as to cover the organic EL element by using an ALD method. In the step of forming the protecting film, the protecting filmis formed by alternately performing a step of forming a high-density layerH by using an ALD method and a step of forming, by using an ALD method, a low-density layerL that has the same constituent element as the high-density layerH and has a lower density than the high-density layerH. The protecting filmhas a layered structure made of one or more high-density layersH and one or more low-density layersL so that the low-density layerL and the high-density layerH are alternately layered so as to be in contact with each other.

Display apparatus and method of manufacturing the same

Provided is a laser annealing treatment including a laser light source that outputs pulse laser light, an optical system that shapes the pulse laser light, and leads the shaped pulse laser light to a semiconductor film subject to treatment, and a stage that carries the semiconductor film to be irradiated by the pulse laser light, wherein the pulse laser light irradiating the semiconductor film presents a rising time equal to or less than 35 nanoseconds from 10% of the maximum height to the maximum height in the pulse energy density, and a falling time equal to or more than 80 nanoseconds from the maximum height to 10% of the maximum height, thereby increasing, while an energy density suitable for crystallization and the like is not particularly increased, a margin quantity thereof, and carrying out high quality annealing treatment without decreasing a throughput.

Laser annealing treatment apparatus and laser annealing treatment method

A first mirror () that can be located at a reflection position (I) at which an optical path is blocked and a laser beam (a) is reflected, and a second mirror () that reflects the laser beam (a) which is reflected by the first mirror () are disposed between the condenser lens () and the object to be irradiated (). The first mirror () is located at the reflection position (I) so that the laser beam (a) that is transmitted through the condenser lens () is sequentially reflected by the first and second mirrors (and), and an intensity of the laser beam (a) that is again reflected by the first mirror () is made to coincide with an intensity of the laser beam (a) that is reflected from the object to be irradiated (), and the condenser lens () is heated in the same manner that the processing laser beam (a) is transmitted through the condenser lens () and irradiated on the object to be irradiated ().

Laser irradiating method including maintaining temperature of a lens

Because a focal distance of a condenser lens is changed due to a change in temperature, when irradiation of a laser beam is restarted after the irradiation has stopped, it takes a long time to restore a temperature of the cooled lens to a given temperature, and the operating efficiency is deteriorated. A first mirrorthat can be located at a reflection position I at which an optical path is blocked and a laser beam a is reflected, and a second mirrorthat reflects the laser beam a which is reflected by the first mirrorare disposed between the condenser lensand the object to be irradiated. The first mirroris located at the reflection position I so that the laser beam a that is transmitted through the condenser lensis sequentially reflected by the first and second mirrorsand, and an intensity of the laser beam a that is again reflected by the first mirroris made to coincide with an intensity of the laser beam a that is reflected from the object to be irradiated, and the condenser lensis heated in the same manner that the processing laser beam a is transmitted through the condenser lensand irradiated on the object to be irradiated

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Kanagawa, Japan

Junichi Shida