Hamamatsu-photonics K.k.

Junichi Sawada

Kazuki Fujita

Ryuji Kyushima

Harumichi Mori

Haruyoshi Okada

Masahiko Honda

Minoru Ichikawa

Seiji Fukamizu

Shuhei Namba

Takao Aritake

A radiation imaging device according to one embodiment comprises a radiation detection panel, a base substrate having a support surface configured to support the radiation detection panel, and a housing, wherein: the housing has a top wall and a bottom wall, the base substrate has a protruding portion which protrudes further outward than the radiation detection panel when seen in a direction orthogonal to the support surface, a first extending portion is provided to the support surface of the protruding portion, a second extending portion is provided to a back surface of the protruding portion, the second extending portion being disposed at a position which it faces the first extending portion with the protruding portion interposed therebetween, and the base substrate is supported on the top wall via the first extending portion and is supported on the bottom wall via the second extending portion.

Radiation imaging device

A radiation imaging device according to one embodiment includes a radiation detection panel having a first surface on which a detection region is formed and an electrode pad is formed outside the detection region, and a second surface on a side opposite to the first surface, a base substrate having a support surface configured to face the second surface of the radiation detection panel and configured to support the radiation detection panel, and a flexible circuit substrate connected to the electrode pad via a connecting member, wherein an end portion of the base substrate is located further inward than an inner end portion of the connection region in which the electrode pad, the connecting member, and the flexible circuit substrate overlap each other when seen in an Z direction orthogonal to the support surface.

Radiation imaging device, production method for radiation imaging device, and repair method for radiation imaging device

A radiation imaging device according to one embodiment includes a radiation detection panel having a first surface on which a detection region is formed, and a second surface on a side opposite to the first surface, a base substrate having a support surface configured to face the second surface and configured to support the radiation detection panel, and a flexible circuit substrate connected to the radiation detection panel, wherein an end portion of the base substrate corresponding to a portion to which the flexible circuit substrate is connected is located further inward than an end portion of the radiation detection panel when seen in a first direction orthogonal to the support surface, and the base substrate has a protruding portion which protrudes further outward than the radiation detection panel at a position at which the base substrate does not overlap the flexible circuit substrate when seen in the first direction.

The present embodiment relates to a radiation imaging system and the like provided with a solid-state imaging device having a structure enabling reduction of linear noise appearing in an integrated image. The solid-state imaging device comprises: L pieces of imaging pixel region arranged along a direction crossing a moving direction of a relative position of the solid-state imaging device; and L pieces of A/D converter provided corresponding to the L pieces of imaging pixel region. Each imaging pixel region includes pixels arranged two-dimensionally to form an M-row by N-column matrix. Any one of the L pieces of A/D converter executes a dummy A/D conversion once or more times after an A/D conversion of an electric signal from a pixel of an m-th row, before an A/D conversion of an electric signal from a pixel of an (m+1)-th row.

Solid-state image capturing device, radiation image capturing system, and method of controlling solid-state image capturing device

A solid-state imaging device includes a photodetecting section, a vertical shift register section, first row selection lines, and second row selection lines. The vertical shift register section provides the row selection lines of the m-th row with common row selection signals.

Solid state imaging apparatus including photodetecting section

A solid-state imaging device includes a photodetecting unit including MN pixels arrayed two-dimensionally in M rows and N columns, an output unit outputting a digital value generated on the basis of the amount of charge input from the pixels, and a control unit. The control unit divides the MN pixels in the photodetecting unit into unit regions each including pixels in Q rows and R columns, divides the unit regions arrayed two-dimensionally in (M/Q) rows and (N/R) columns into binning regions each including unit regions in K rows and one column, and repeatedly outputs the digital value according to the sum of amounts of the charges output from KQR pixels included in each binning region from the output unit K times in a column order for each row sequentially for the binning regions arrayed two-dimensionally in (M/KQ) rows and (N/R) columns.

Solid-state imaging device, X-ray imaging system, and solid-state imaging device driving method

Solid state imaging device including photodetecting section

A sensor unit includes a metallic base member, a solid-state imaging element, and amplifier chips. The base member has a first placement surface and a second placement surface. The solid-state imaging element has a photodetecting surface, and is disposed on the first placement surface such that a rear surface and the first placement surface face each other. The amplifier chips are mounted on a substrate disposed on the second placement surface. The base member further has side wall portions facing side surfaces of the solid-state imaging element. The chips and the solid-state imaging element are electrically connected to one another via a bonding wire. The chips are thermally coupled to the base member via a thermal via of the substrate.

Sensor unit and solid-state imaging device

A solid-state image pickup deviceincludes a photodetecting section, a signal readout section, a controlling section, and a correction processing section. In the photodetecting section, M&#xd7;N pixel units Pto Peach including a photodiode that generates charge of an amount according to an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. A charge generated in each pixel unit Pis input to an integration circuit Sthrough a readout wiring line L, and a voltage value output from the integration circuit Saccording to the charge amount is output to an output wiring line Lthrough a holding circuit H. In the correction processing section, a correction processing is applied to respective frame data output from the signal readout section, and the frame data after the correction processing is output. Accordingly, a solid-state image pickup device that allows acquiring a high-resolution image by correcting pixel data when any readout wiring line is disconnected is realized.

Solid-state image pickup device

The present invention relates to a solid-state imaging device, etc., having a structure which enables to obtain an image with higher resolution by correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device () comprises a photodetecting section (), a signal reading-out section (), a controlling section (), and a correction processing section (). The photodetecting section () has M&#xd7;N pixel portions Pto Ptwo-dimensionally arrayed in M rows and N columns, and each of the pixel portions Pto Pincludes a photodiode which generates charges of an amount corresponding to an incident light intensity and a reading-out switch connected to the photodiode. Charges generated in each of the pixel portions Pto Pare inputted into an integrating circuit Sthrough a reading-out wiring L. A voltage value outputted from the integrating circuit Scorresponding to the amount of inputted charges is outputted to an output wiring Lthrough a holding circuit H. The correction processing section () applies correction processing to frame data repeatedly outputted from the signal reading-out section (), and then outputs the frame data after correction processing.

Solid-state imaging device and frame data correcting method which determine a voltage value corresponding to a pixel portion in frame data

The present invention relates to a solid-state imaging device, etc., which makes it possible to obtain an image with higher resolution by properly correcting pixel data even when any one of row selecting wirings is disconnected. A solid-state imaging device () comprises a photodetecting section (), a signal reading-out section (), a controlling section (), and a correction processing section (). In the photodetecting section (), M&#xd7;N pixel portions Pto Pare two-dimensionally arrayed in a matrix of M rows and N columns, and each of the pixel portions Pto Pincludes a photodiode and a reading-out switch. Charges generated in each pixel portion Pare inputted into an integrating circuit Sthrough a reading-out wiring L, and a voltage value corresponding to the amount of charges is outputted from the integrating circuit S. The voltage value from the integrating circuit Sis outputted to an output wiring Lthrough a holding circuit H. In the correction processing section (), correction processing is applied to frame data repeatedly outputted from the signal reading-out section (), and the frame data after correction is outputted.

Solid-state imaging device and frame data correcting method

A solid state imaging deviceincludes a photodetecting section, a signal readout section, a controlling section, and a correction processing section. In the photodetecting section, M&#xd7;N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion Pare input into an integration circuit S, through a readout wiring L, and a voltage value output corresponding to the charge amount from the integration circuit Sis output to an output wiring Lthrough a holding circuit H. In the correction processing section, correction processing is performed for frame data repeatedly output from the signal readout section, and frame data after being subjected to the correction processing is output.

Solid state imaging device

A solid state imaging deviceincludes a photodetecting section, a signal readout section, a controlling section, and a correction processing section. In the photodetecting section, M&#xd7;N pixel portions each including a photodiode which generates charges as much as an incident light intensity and a readout switch connected to the photodiode are two-dimensionally arrayed in M rows and N columns. Charges generated in each pixel portion Pare input into an integration circuit Sthrough a readout wiring L, and a voltage value output corresponding to the charge amount from the integration circuit Sis output to an output wiring Lthrough a holding circuit H. In the correction processing section, correction processing is performed for frame data repeatedly output from the signal readout section, and frame data after being subjected to the correction processing is output.

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Hamamatsu, Japan

Junichi Sawada