Hitachi, Ltd.

Hitachi Power Semiconductor Device, Ltd.

Advanced Pdp Development Center Corporation

Junichi Sakano

Mutsuhiro Mori

Kenji Hara

Hideki Miyazaki

Tetsuya Ishimaru

Shinji Shirakawa

Takashi Ogawa

Masahiro Nagasu

Hideo Kobayashi

Masahiro Iwamura

Katsunori Suzuki

Koji Tateno

Kimihisa Furukawa

Shinichi Kurita

Kohhei Onda

Yoshinobu Kimura

Toshiyuki Innami

Shinichi Fujino

Shin Kimura

Kohsei Goto

Hiroshi Suzuki

Hiroshi Nakano

Keisuke Yamamoto

Masaki Shiraishi

Motoo Aoyama

Takuya Aoyagi

Katsumi Ishikawa

Yuki Mori

Naoki Sakurai

Hiroshi Shinoda

Motomune Kodama

Takashi Naitou

Takahide Terada

Naoki Tega

Satoru Shigeta

Haruka Shimizu

Mieko Matsumura

Yuuji Maeda

Seigoh Yukutake

Keisuke Kobayashi

Taiga Arai

Hisashi Endou

Kazuki Tani

Renichi Yamada

Tsuneyuki Hashimoto

Katsuhito Takahashi

Ryou Ishibashi

Takuo Nagase

Yasuhiko Kouno

Shigeru Sugayama

Tetsushi Hino

Kohei Onda

A temperature abnormality of the power module is accurately detected. A power conversion device including a power semiconductor module with a switching element, includes: a gate driver circuit configured to drive a switching element and transmitting a response signal upon a switching operation of the switching element; a control unit device configured to output to a gate driver circuit an instruction signal for switching; a temperature detection unit configured to calculate a bonding temperature of the switching element based on a response signal to the instruction signal; and a calculation unit configured to determine a state of a power semiconductor module according to a bonding temperature calculated by the temperature detection unit and the response signal.

Power conversion device, motor control system, and diagnosis method for power conversion device

A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.

Semiconductor device and alternator using the same

A diagnostic system for a power conversion apparatus including a semiconductor device and performing a switching operation for carrying and interrupting a main current to a main current is disclosed. This system includes a trigger circuit that acquires reference time for the switching operation; and a delay time calculation circuit that acquires first time at which the main current takes a first main current set value and second time at which the main current takes a second main current set value, and that detects numerical data about a difference between the first time and the reference time and numerical data about a difference between the second time and the reference time.

Diagnosis system for power conversion device, diagnosis method for semiconductor module, and power conversion device

The object of the invention is to provide an inverter device and an electric motor device using the same to shorten a dead time. Thus, an inverter device is provided, which includes: a switching element including a control terminal and a pair of main terminals; a control circuit configured to output a control signal which indicates whether to instruct an ON state of the switching element; a decision circuit configured to output a decision signal which indicates a state of the switching element based on a voltage between the main terminals of the switching element; and a drive circuit configured to control the ON state or an OFF state of the switching element based on the control signal and the decision signal.

Inverter device and electric motor device using same

The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be attached to an alternator. On the first external electrode there mounted: a MOSFET chip; a control circuitry to which voltages at or a current flowing between a first main terminal and a second main terminal of the MOSFET chip is inputted and which generates, on the basis of the voltages or the current, a control signal applied to a gate of the MOSFET chip; and a capacitor for providing a power supply to the control circuitry. The semiconductor device further has a second external electrode disposed opposite to the first external electrode with respect to the MOSFET chip. An electrical connection is made between the first main terminal of the MOSFET chip and the first external electrode, and between the second main terminal of the MOSFET chip and the second external electrode.

Semiconductor device, and alternator and power conversion device which use same

To solve a problem of realizing a large current and highly reliable power semiconductor device while shrinking a unit cell. A semiconductor device according to the present invention includes a plurality of p-type body regions extending in a first direction. The semiconductor device further includes: a JFET region formed to extend in the first direction between p-type body regions which are adjacent to each other in a second direction orthogonal to the first direction; an n-type source region formed to extend in the first direction within a p-type body region and separate from an end side surface of the p-type body; and a channel region formed to extend in the first direction and in a top layer portion of a p-type body region between an end side surface of the p-type body region and an end side surface of an n-type source region.

Semiconductor device and power conversion device

The present invention relates to a power conversion device in the power electronics field. An object of the present invention is to provide a technique of determining whether a switching element operates normally or not from a gate monitor signal of a power conversion device, and predicting a sign of a failure by obtaining the temperature of the switching element from a transient state of the switching voltage of the power conversion circuit as a component of the power conversion device without using a new signal path.

Power conversion device

A diagnostic system for a power converter which includes a semiconductor device, and which performs a switching operation between conduction and interruption of the principal current flowing through a main circuit. The diagnostic system includes a current change amount calculation circuit for obtaining numeric data which reflects a current change amount of the principal current per unit time, a determination circuit for determining a state of the power converter by comparing the numeric data with a reference value, and an output circuit for outputting a determination result of the determination circuit.

Power converter, diagnostic system of power converter, and power converter diagnostic method using current change

A rectifier including an autonomous type synchronous-rectification MOSFET is provided, which prevents chattering and through-current caused by a malfunction when a noise is applied. The rectifier includes: a rectification MOSFET for performing synchronous rectification; a determination circuit configured to input a voltage between a pair of main terminals of the rectification MOSFET, and to determine whether the rectification MOSFET is in on or off state on the basis of the inputted voltage; and a gate drive circuit configured such that a gate of the rectification MOSFET is turned on and off by a comparison signal from the determination circuit, and such that a time required to boost a gate voltage when the rectification MOSFET is turned on is longer than a time required to lower the gate voltage when the rectification MOSFET is turned off.

Rectification device, alternator, and power conversion device

Provided is a semiconductor device including: a first external electrode which includes a circular outer peripheral portion; a MOSFET chip; a control circuit chip which receives voltages of a drain electrode and a source electrode of the MOSFET and supplies a signal to a gate electrode to control the MOSFET on the basis of the voltage; a second external electrode which is disposed on an opposite side of the first external electrode with respect to the MOSFET chip and includes an external terminal on a center axis of the circular outer peripheral portion of the first external electrode; and an isolation substrate which isolates the control circuit chip from the external electrode. The first external electrode, the drain electrode and the source electrode of the MOSFET chip, and the second external electrode are disposed to be overlapped in a direction of the center axis. The drain electrode of the MOSFET chip and the first external electrode are connected. The source electrode of the MOSFET chip and the second external electrode are connected.

Semiconductor device, and alternator and power converter using the semiconductor device

Provided is a structure including a first member (); a second member () disposed opposite to the first member (); and a glass layer () disposed between the first member () and the second member () so as to bond the first member () and the second member (). A glass transition point of the glass layer () is lower than a temperature of the glass layer () under operation. In the glass layer (), at least either of ceramic and metallic particlesis dispersed. In a temperature region lower than the glass transition point of the glass layer (), a thermal expansion coefficient thereof falls in between thermal expansion coefficients of the first member () and the second member (). This allows thermal strain caused within the structure () to be reduced when the structure () is operated at a higher temperature than a room temperature.

Structure, electronic element module, heat exchanger, fuel rod, and fuel assembly

The present invention provides a semiconductor device of a bi-directional analog switch having a high linearity and a low electric power loss. An ultrasonic diagnostic apparatus having a high degree of detection accuracy, comprising the semiconductor device, is also provided. A semiconductor device of a bi-directional analog switch, comprising a switch circuit capable of switching ON or OFF bi-directionally, and built-in driving circuits for the switch circuit, wherein the driving circuit is connected to first and second power supplies, and a first power supply voltage is higher than a maximum voltage of a signal applied to an input/output terminal of the switch circuit, a second power supply voltage is lower than a minimum voltage of a signal applied to an input/output terminal of the switch circuit, and the driving circuit comprises a Zener diode and a p-type MOSFET connected in series between the first power supply and the switch circuit.

Semiconductor device and ultrasonic diagnostic apparatus using the same

In order to provide a communication system which performs a communication while maintaining high voltage insulation, a control circuit which is operated at a low voltage, and a controlled circuit which is operated at a high voltage are connected through a propagation layer having a waveguide structure, thereby performing a communication. In particular, a displacement current (surge current) flows between a high voltage circuit and a low voltage circuit due to a potential fluctuation which occurs in the high voltage circuit A surge current protection circuit is provided, and applying an input which is out of rating to the communication module and the low voltage circuit due to such a surge current is prevented.

Communications system

A first annular isolation trench is formed in a periphery of an element region, and a second annular isolation trench is formed around the first annular isolation trench with a predetermined distance provided from the first annular isolation trench, and a semiconductor layer between the first annular isolation trench and the second annular isolation trench is separated into a plurality of portions by a plurality of linear isolation trenches formed in the semiconductor layer between the first annular isolation trench and the second annular isolation trench, and the semiconductor layer (source-side isolation region) which opposes a p-type channel layer end portion and is located between the first annular isolation trench and the second annular isolation trench is separated from other semiconductor layers (drain-side isolation regions) by the linear isolation trenches.

Semiconductor integrated circuit with high withstand voltage element forming trench isolation on substrate

A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.

Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus

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Hitachi, Japan

Junichi Sakano