Toshiba Ceramics Co., Ltd.

Junichi Osanai

Kazuhiko Kashima

Masayuki Watanabe

Akihiko Kobayashi

Hiroyuki Fujimori

At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300&#xb0; C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Growing community of inventors

Nishiokitama-gun, Japan

Junichi Osanai