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Research Development Corporation of Japan

Handotai Kenkyu Shinkokai

Zaidan Hojin Handotai Kenkyu Shinkokai

Research Development Corporation

Junichi Nishizawa

Seiko Instruments Inc

Osaka Sanso Kogyo Ltd.

Fuji Photo Film Company, Limited

Oki Electric Industry Co., Ltd.

Kabushiki Kaisha Daini Seikosha

Tohoku Electric Power Company, Inc.

Oki Electric Co., Ltd.

Fuji Film Co., Ltd.

Kaoru Motoya

Takashige Tamamushi

Hitoshi Abe

Soubei Suzuki

Tadahiro Ohmi

Sobei Suzuki

Kenji Aoki

Koji Shimanuki

Takahiko Kijima

Yoshikatsu Tamaoki

Masafumi Inuiya

Sohbe Suzuki

Akira Makihara

Edward Frederick Ezell

Nobuo Takeda

Masafumi Shimbo

Fumihiko Ando

Taichi Tagawa

Koichi Mitamura

Shigeo Yoshikawa

Kiyoo Mitsui

Masakazu Morishita

Yoshihiro Kokubun

Akira Ito

Rensaku Suzuki

Kenji Aizawa

Hideki Mutoh

Hitochi Abe

Mitsuru Ikeda

Kimio Miura

A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.

Semiconductor crystal growth apparatus

In a semiconductor crystal growth apparatus, a substrate is heated in a growth vessel evacuated to a ultrahigh vacuum, and gas containing component elements of a semiconductor which should grow on the substrate are introduced into the growth vessel from external gas sources. Radiation having a specific wavelength is directed from an external irradiation source toward and onto the substrate.

Apparatus for forming semiconductor crystal

Color display device

A cycle of alternately or cyclically introducing external gases containing molecules of component elements of a compound semiconductor to be formed on a substrate is repeated while appropriately controlling the pressure, substrate temperature and gas introduction rate in a crystal growth vessel, so that a monocrystal which is dimensionally as precise as a single monolayer can grow on the substrate by making use of chemical reactions on the heated substrate surface. Doped molecular layer epitaxy of a compound semiconductor comprising individual steps of introducing and evacuating a first source gas, introducing and evacuating a second source gas, and introducing and evacuating an impurity gas which contains an impurity element. The doped impurity concentration varies almost linearly with the pressure during doping in a wide range.

Growth of doped semiconductor monolayers

A recess-gate type static induction transistor having a high breakdown voltage is provided, which includes an n-type channel region provided over an n.sup.+ -type drain region, p.sup.+ -type elongated gate regions provided in grooves of the channel region, n.sup.+ -type elongated regions formed on the channel region so as to be arranged in parallel with the gate regions, each of which is disposed between the gate regions, and a p.sup.+ -type guard ring region provided in the channel region and arranged to surround the gate regions. The elongated gate regions are coupled to the guard ring region at both edges. In addition, the outer-most elongated gate regions are coupled to the guard ring region along the longitudinal direction, respectively, thereby increasing the breakdown voltage of the device. Further, gate and source contact pads are provided only on the guard ring region so as to be opposed, thereby reducing unwanted parasitic capacitances between gate and drain regions and between gate and source regions.

High frequency static induction transistor having high output

The invention relates to an apparatus for determining the frost point of a gas containing a very small amount of water. The apparatus comprises (I) compartment A made of a good heat conductor; (II) an inlet for the gas to be measured, which inlet is provided on compartment A; and (III) a heater for adjusting the temperature in compartment A, and a temperature sensor. The apparatus further comprises (IV) compartment B which is adjacent to compartment A. At least part of compartment B is made of a poor heat conductor. Further, the apparatus comprises (V) a hole at the interface between compartments A and B and (VI) a reflector mirror having a temperature sensor. The reflector mirror is provided on compartment B in such a way as to cover the hole is connected thermally to a freeze source in such a way that the temperature of the reflector mirror can be varied from room temperature to at least -80.degree. C. Also, the apparatus comprises (VII) a gas outlet provided on compartment B; (VIII) a small gap formed between the hole and the reflector mirror; (IX) a device that allows convergent rays of light or laser light to be emitted onto the surface of the reflector mirror; and (IX) a photodetector equipped with a condenser lens. The condenser lens condenses light from frost formed on the surface of the reflector mirror when said gas to be measured contacts said mirror and said water in said gas condenses as frost. Finally the apparatus comprises (XI) a detector device that senses the temperature at which frost occurs on the reflector mirror.

Apparatus for measuring the dew point or frost point of a gas having low

A method of manufacturing GaAs single crystals in which gas in the vicinity of the surface of a substrate crystal is irradiated with light so as to an epitaxial growth of GaAs single crystals may be enabled by the halogen transport method under such condition that the temperature of the substrate crystal is lowered less than 700.degree. C.

Method of manufacturing GaAs single crystals

For effecting impurity doping, a chemically active semiconductor surface is covered with an adsorption layer composed of an impurity element which forms a dopant in the semiconductor or composed of a compound containing the impurity element. Thereafter, solid phase diffusion is effected using the adsorption layer as an impurity diffusion source so as to form an impurity-doped region having a desired density profile in the depth direction.

Impurity doping method with adsorbed diffusion source

A method of determining the dew point of a gas containing a very small amount of water using (1) a reflector mirror the temperature of which can be varied from room temperature down to at least -80.degree. C.; (2) a source of condensed rays of light for irradiating the reflector mirror; and (3) a light recovering device that detects changes in scattered light due to condensation on the reflector mirror by exposing the mirror to the gas. The method comprises cooling the mirror and detecting the temperature at which the scattered light has a maximum intensity; slowly raising the temperature and detecting the temperature at which the scattered light has a minimum intensity and repeating the cycle until the temperature at which the intensity is a maximum and the temperature at which the intensity is a minimum are almost the same.

Method and apparatus for measuring the dew point and/or frost point of a

Semiconductor crystal growth method

The thickness of a thin film of an element semiconductor may be determined by counting the number of cycles of gaseous component introductions within a crystal growth vessel. Each cycle permits at most one monolayer of growth since the pressure in the vessel during gaseous component introduction is maintained under a saturation condition. The temperature to which a substrate in the vessel is heated is that for which epitaxial growth results.

Process for forming a thin film of silicon

A GaAs monocrystal film was grown by use of a process which comprises introducing a gaseous compound containing a component element desired to be grown into a vacuum tank, and submitting the compound to reaction on a base to thereby grow a semiconductor crystal each one molecular layer. Triethylgallium (TEG) and arsine (AsH.sub.3) are used as the gaseous compound. One gas is introduced into the vaccum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and then discharged after the passage of a predetermined time whereby a crystal for one molecular layer grows. By use of TEG as a gallium source, reaction progresses even when a temperature of the base is below 300.degree. C., and a GaAs monocrystal film which is extremely less in lattice failure and impurities was obtained.

Process for growing GaAs monocrystal film

A method for growing a single crystal thin film of an element semiconductor which comprises repeating the successive operations of feeding a single kind of gas containing the element semiconductor as a component element onto a substrate heated in a growth chamber and then exhausting the gas in the growth chamber under controlled conditions and thereby growing the single crystal thin film of said element semiconductor in a desired thickness with a precision of monomolecular layer. In an alternate method for growing a single crystal thin film of an element semiconductor, the sole gas containing the element semiconductor is continuously fed onto the substrate for a given period of time, thereby forming a single crystal thin film of element semiconductor having a desired thickness. According to the present invention, there can be obtained single crystal thin films with high quality in a high reproducibility, by simplified operating parameters and growing apparatus.

Method for growing single crystal thin films of element semiconductor

In a static induction transistor of thermionic emission type, its gate region is formed of a semiconductor having a forbidden band gap larger than that of a semiconductor forming its channel region, and the distance between a source region and the intrinsic gate region is selected to be smaller than the mean free path of carriers so as to permit the thermionic emission. Such a vertical structure transistor is also applied to an integrated circuit.

Thermionic emission type static induction transistor and its integrated

A step-cut insulated gate static induction transistor can accurately make a channel length and a gate length and is excellent as a high speed transistor but is greatly affected by a deviation in mask alignment in the manufacturing process. This invention utilizes the fact that a gate portion formed in a previous processes is used as a mask in a post portion to thereby self-adjustably form the post portion, thus eliminating the influence of the deviation in mask alignment. In addition, a construction has been invented in which a current flowing through a portion apart from a gate between a drain and a source can be restricted. The aforesaid manufacturing method is also used for this improved construction.

Step-cut insulated gate static induction transistors and method of

Growing community of inventors

Sendai, Japan

Junichi Nishizawa