Nippon Telegraph and Telephone Corporation

Junichi Nakano

Yasuhiro Suzuki

Masashi Nakao

Osamu Mitomi

Kazuo Kasaya

Kiyoyuki Yokoyama

Masahiro Yuda

Mitsuru Naganuma

Masanobu Okayasu

Yasuhiro Kondou

An optical functional device includes a semiconductor substrate, an optical functional layer provided on said semiconductor substrate and selected from the group consisting of a light emitting layer, a light absorbing layer, and an optical waveguide layer. The optical functional layer has a multi-quantum well layer. Preferably, the semiconductor substrate is a nonplanar semiconductor substrate having a ridge and two grooves adjacent said ridge, said ridge having a ridge width of from 1 to 10 .mu.m, a ridge height of from 1 .mu.m to 5 .mu.m, and a gap distance of from 1 .mu.m to 10 .mu.m. Such an optical functional device can be fabricated by growing, on a nonplanar semiconductor substrate having a specified dimension of the ridge, a strained multi-quantum well layer by metalorganic vapor phase epitaxy. Integrated optical device or circuit preferably includes an optical functional device on the nonplanar semiconductor substrate of a specified range of ridge shape factors. An integrated optical device can be fabricated by combination of a plurality of optical functional devices having slightly different compositions and including a part of a strained multi-quantum well layer monolithically grown on a nonplanar semiconductor substrate.

Optical functional devices and integrated optical devices having a

Method for producing various semiconductor optical devices of differing

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Atsugi, Japan

Junichi Nakano