Tokyo Shibaura Electric Co., Ltd.

Showa Denko Kabushiki Kaisha

Showa Denko K.k.

Junichi Nakamura

Satoshi Shinozaki

Yoshio Nishi

Yukuya Tokumaru

Masanori Nakai

Shintaro Ito

Takashi Ueshima

Masao Ogawa

Hiroshi Konuma

Shigeru Kurosawa

Shiro Kokuryo

Chutatsu Tsuge

Shoichiro Takezoe

The integrated injection logic semiconductor device comprises an N type semiconductor substrate, a P type semiconductor layer laminated on the N type semiconductor substrate, a first N type region extending through the P type semiconductor layer to reach the N type semiconductor substrate, a P type region formed in the first N type region and having a periphery along the outer periphery of the first N type region and a second N type region formed in the P type semiconductor layer. The integrated injection logic semiconductor device is constituted by a PNP lateral transistor utilizing the P type region, the first N type region and the P type semiconductor layer as the emitter, base and collector electrodes respectively, and a NPN vertical transistor utilizing the N type semiconductor substrate, P type semiconductor layer and the second N type region as the emitter, base and collector electrodes, respectively.

Integrated injection logic semiconductor devices

A P type semiconductor layer is formed on an N type semiconductor layer by vapor epitaxial growth technique, an insulating film is formed on the P type semiconductor layer and a grid shape first opening is provided through the insulating film. Then, phosphorus is diffused into the P type semiconductor layer through the grid shape opening to form a first N type region extending through the semiconductor layer to reach the N type semiconductor layer. Then, second openings are formed through respective sections of the insulating film divided by and surrounded by the grid shape first opening and boron is diffused through the first and second openings to form first and second P type regions in the grid shape first N type region and the P type semiconductor layer, respectively. Finally, third openings are formed through respective portions of the insulating film and phosphorus is diffused into the P type semiconductor layer through the third openings to form second N type regions thereby forming an integrated injection logic semiconductor device including a lateral PNP transistor and a vertical NPN transistor.

Method of manufacturing intergrated injection logic semiconductor

Method of manufacturing integrated injection logic semiconductor devices

A resin composition having superior mechanical properties, especially high impact strength, which comprises (A) a norbornene-type polymer obtained by ring-opening polymerization of 5-cyano-bicyclo[2,2,1]heptene-2 or a mixture thereof with a small amount of a cycloolefin-type compound in the presence of an unsaturated polymer having a carbon-carbon double bond in the molecule and (B) a vinyl chloride homopolymer or copolymer.

Resin compositions having superior mechanical properties

An integrated injection logic semiconductor device is composed of an N type semiconductor substrate, a P type layer, a first N type region so formed as to penetrate through the P type semiconductor layer and contact the N type semiconductor substrate, a second N type region formed in the P type semiconductor layer, and a P type region formed in the first N type region. A third N type region is provided surrounding said first and second N type regions and penetrating through the P type semiconductor layer. I.sup.2 L circuit is composed of a lateral PNP transistor whose emitter, base and collector are constituted by said P type region, said first N type region and said P type semiconductor layer, respectively, and a vertical NPN transistor whose emitter, base and collector are constituted by said N type semiconductor substrate, said P type semiconductor layer and said second N type region, respectively.

Integrated injection logic with both grid and internal double-diffused

High impact composition of ring-opening polymerization product formed of (A) 100 parts by weight of at least one ring-opening polymerization product selected from the group consisting of (a) ring-opening polymerization homopolymers of norbornene derivatives containing at least one nitrile group or a substituent including said nitrile group, (b) ring-opening polymerization homopolymers of norbornene derivatives containing at least one ester group or a substituent including said ester group, (c) ring-opening polymerization copolymers of combination of said norbornene derivatives, and (d) other ring-opening polymerization copolymers of any of said norbornene derivatives and 50 mol% at most of other unsaturated cyclic compounds; and (B) 0.05 to 10.0 parts by weight of specified metal salts of fatty acids.

High impact composition of ring-opening polymerization product

An integrated injection logic semiconductor device comprises an N type semiconductor substrate, a P type semiconductor layer laminated on said semiconductor substrate, and N type first region formed in a manner penetrating through said P type semiconductor layer to reach said N type semiconductor substrate, a first P type region formed in said first N type region, a second N type regionformed in said P type semiconductor layer, and a second P type region formed between said second N type region and said N type semiconductor substrate in a manner connected directly to said N type semiconductor substrate. An integrated injection logic circuit is comprised of a lateral NPN transistor whose emitter, base and collector are constituted by said first P type region, first N type region and P type semiconductor layer, respectively, and a vertical PNP transistor whose emitter, base and collector are constituted by said N type semiconductor substrate, P type semiconductor layer plus second P type region, and second N type region, respectively.

I.I.L. with graded base inversely operated transistor

A P type semiconductor layer is formed on an N type semiconductor layer by vapour epitaxial growth technique, an insulating film is formed on the P type semiconductor layer and a grid shape first opening is provided through the insulating film. Then, phosphorus is diffused into the P type semiconductor layer through the grid shape opening to form a first N type region extending through the semiconductor layer to reach the N type semiconductor layer. Then, second openings are formed through respective sections of the insulating film divided by and surrounded by the grid shape first opening and boron is diffused through the first and second openings to form first and second P type regions in the grid shape first N type region and the P type semiconductor layer, respectively. Finally, third openings are formed through respective portions of the insulating film and phosphorus is diffused into the P type semiconductor layer through the third openings to form second N type regions thereby forming an integrated injection logic semiconductor device including a lateral PNP transistor and a vertical NPN transistor.

An integrated injection logic semiconductor device which comprises an N type semiconductor substrate; a P type semiconductor layer superposed on the N type semiconductor substrate; a first N type region formed in the P type semiconductor layer; a second N type region formed in the P type semiconductor layer; and a P type region formed in the first N type region, wherein the first N type region is connected to the N type semiconductor substrate through an N type connector region formed between the first N type region and N type semiconductor substrate.

I.I.L. with region connecting base of double diffused injector to

A resin composition having high flame retardance as well as high tensile strength, high impact strength and good moldability is composed of a resin blend comprising: (1) a ternary resin system of acrylonitrile, butadiene and styrene; a ternary resin system of acrylonitrile, acrylic rubber and styrene; a ternary resin system of acrylonitrile, ethylene-propylene rubber and styrene; or a ternary resin system of acrylonitrile, ethylene-vinyl acetate copolymer and styrene; (2) a ternary resin system of acrylonitrile, chlorinated polyethylene and styrene; and (3) antimony trioxide. Acrylonitrile may be replaced by methyl methacrylate and styrene by .alpha.-methyl styrene. Blends of components (1) are acceptable.

Flame retardant resin composition comprising an acrylonitrile-styrene

A resinous composition suitably used for molding purposes composed of an acrylonitrile-chlorinated polyethylene-styrene ternary resin and antimony trioxide and possessing high flame retardancy and superior antistatic properties.

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Yokohama, Japan

Junichi Nakamura