Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho

Kobelco Research Institute, Inc.

Sony Corporation

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Junichi Nakai

Katsutoshi Takagi

Yuuki Tauchi

Toshiki Sato

Yuki Tauchi

Hideo Fujii

Katsufumi Tomihisa

Toshihiro Kugimiya

Hiroshi Gotoh

Jun Nakano

Tetsuhiro Sakamoto

Hitoshi Matsuzaki

Hiroyuki Okuno

Takashi Onishi

Aya Hino

Hiroshi Gotou

Aya Miki

Hiroshi Goto

Katsushi Matsumoto

Kazuo Yoshikawa

Nobuyuki Kawakami

Mototaka Ochi

Naoki Okawa

Toshiaki Takagi

Norihiro Jiko

Akira Nanbu

Hiromi Matsumura

Eisuke Kusumoto

Takashi Miyamoto

Film-formation rate can be increased in the pre-sputtering and in the subsequent sputtering onto a substrate or the like, and sputtering failures such as splashes can be inhibited, by making an Al-based alloy or Cu-based alloy spurting target fulfill the following requirements (1) and/or (2) when the total area ratio of crystal orientations &#x3c;001&#x3e;&#xb1;15&#xb0;, &#x3c;011&#x3e;&#xb1;15&#xb0;, &#x3c;111&#x3e;&#xb1;15&#xb0;, &#x3c;112&#x3e;&#xb1;15&#xb0;, and &#x3c;012&#x3e;&#xb1;15&#xb0; in the sputtering surface normal direction in the depth within 1 mm from the uppermost surface of the sputtering target is referred to as a P value: (1) the area ratio PA of &#x3c;011&#x3e;&#xb1;15&#xb0; to the P value: 40% or lower; and (2) the total area ratio PB of &#x3c;001&#x3e;&#xb1;15&#xb0; and &#x3c;111&#x3e;&#xb1;15&#xb0; to the P value: 20% or higher.

Al-based alloy sputtering target and Cu-based alloy sputtering target

The present invention relates to an Ag alloy film. Particularly, it is preferably used as a reflective film or semi-transmissive reflective film for an optical information recording medium having high thermal conductivity/high reflectance/high durability in the field of optical information recording media, an electromagnetic-shielding film excellent in Ag aggregation resistance, and an optical reflective film on the back of a reflection type liquid crystal display device, or the like. The Ag alloy film of the present invention comprises an Ag base alloy containing Bi and/or Sb in a total amount of 0.005 to 10% (in terms of at %). Further, the present invention relates to a sputtering target used for the deposition of such an Ag alloy film.

AG base alloy thin film and sputtering target for forming AG base alloy thin film

The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.

Al alloy film for display device, display device, and sputtering target

Disclosed is an Al alloy film for a display device that, even when low-temperature heat treatment is applied, can realize satisfactorily low electric resistance, can realize a satisfactory reduction in contact resistance between the Al alloy film and a transparent pixel electrode connected directly to the Al alloy film, and has excellent corrosion resistance. The Al alloy film is connected directly to a transparent electroconductive film on the substrate in the display device. The Al alloy film comprises 0.05 to 0.5 atomic % of Co and 0.2 to 1.0 atomic % of Ge and satisfies the requirement that the content of Co and the content of Ge in the Al alloy film have a relationship represented by formula (1): [Ge]&#x2267;&#x2212;0.25&#xd7;[Co]+0.2 (1) In formula (1), [Ge] represents the content of Ge in the Al alloy film, atomic %; and [Co] represents the content of Co in the Al alloy film, atomic %.

An optical information recording medium of the present invention is a read-only optical information recording medium in which at least one reflective film formed of an Al-based alloy and at least one light transmission layer are successively laminated on a substrate. The arithmetical mean roughness of the reflective film is 0.5 nm or less, and the thickness of the reflective film is 25 nm or more. The optical information recording medium of the present invention is the read-only optical information recording medium including the reflective film which has a high reflectivity and low jitter, preferably has excellent durability, and is used particularly appropriately in an optical disc using a blue laser such as BD-ROM or HD DVD-ROM.

Read-only optical information recording medium

A pirated optical recording medium may be determined which is produced by physically transferring a shape of pits and lands formed on a substrate of an optical recording medium. The optical recording medium is provided with excellent weatherability and long-term storage reliability. A reflective film formed of an Ag alloy film of AgXCu, where X is at least one element among Ti, W, Ta, V, Mo, Nb and Zr, is formed on a substrate on which main data is recorded with a combination of pits and lands. A mark may be formed so that a reproduction signal level in the recorded mark of auxiliary data write once recorded on the reflective film is increased, and a reproduction signal level is decreased in an optical recording medium prepared by physically transferring the surface shape of the pits and lands of the substrate. A pirated optical recording medium may be determined in this manner.

Optical recording medium having write once metal reflective film

Ag base alloy thin film and sputtering target for forming Ag base alloy thin film

An Ag sputtering targethas three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering targetin planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values Aand Busing the formula below, and selecting larger one of the values Aand Bas the three-dimensional fluctuation of the grain sizes.1=()/&#xd7;100(%)1=()/&#xd7;100(%)

AG base sputtering target and process for producing the same

A display has a glass substrate provided with a transparent conducting film, thin-film transistors, and an aluminum alloy wiring film electrically connecting the thin-film transistors to the transparent conducting film. The aluminum alloy wiring film is a layered structure having a first layer (X) of an aluminum alloy comprising at least one element selected from the specific element group Q including Ni and Ag, and at least one element selected from the specific element group R including rare-earth elements and Mg in a content in the specific range, and a second layer (Y) of an aluminum alloy containing having a resistivity lower than that of the first layer (X). The first layer (X) is in direct contact with the transparent conducting film.

Display device

In an electronic device comprising a first electrodes consisting of a metal oxide and a second electrode consisting of an aluminum alloy film directly contacted and electrically connected to the first electrode, the contact interface between the aluminum alloy film and the first electrode is constructed so that at least a part of alloy components constituting the aluminum alloy film exist as a precipitate or concentrated layer. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows elimination of a barrier metal in such an electronic device, and manufacturing technology therefor.

Electronic device, method of manufacture of the same, and sputtering target

An optical information recording medium includes a read-only information recording portion, and a BCA (Burst Cutting Area) portion formed by laser marking. A reflective film on an information recording surface of the read-only information recording portion and a reflective film on the BCA portion are formed of the same material. The reflective film includes Ag as a main component, and at least one of Nd and Gd, and at least one of Sn and In as components; the reflective film including at least one of Nd and Gd of 0.1 atom % or more and 3.0 atom % or less in total and at least one of Sn and In of 3 atom % or more and 12 atom % or less in total. Recorded information is reproduced from the information recording surface of the read-only information recording portion and a BCA signal is reproduced from the BCA portion, using blue-violet laser reproducing light.

Optical information recording medium and method of marking BCA (burst cutting area) into the same

The invention relates to an Ag alloy reflective film for an optical information recording medium, including Ag as a main component, at least one kind of Nd, Gd, Y and Sm in a total amount of more than 0.1 atomic percent and not more than 3.0 atomic percent and at least one kind of W, Mo, V, Zr, Nb and Cr in a total amount of 3.0 to 10.0 atomic percent; an Ag alloy reflective film for an optical information recording medium, including Ag as a main component, at least one kind of Nd, Gd, Y and Sm in a total amount of more than 0.1 atomic percent and not more than 3.0 atomic percent and at least one kind of Ti and Ta in a total amount of 5.0 to 10.0 atomic percent; an optical information recording medium including the Ag alloy reflective film; and an Ag alloy sputtering target having a composition same as that of the Ag alloy reflective film.

Ag alloy reflective film for optical information recording medium, optical information recording medium and Ag alloy sputtering target for forming Ag alloy reflective film for optical information recording medium

The sputtering target made of a Ag&#x2014;Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[I/I+I+I+I)]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.

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Kobe, Japan

Junichi Nakai