Ricoh Company, Ltd.

Junichi Konishi

Daisuke Kosaka

Masayuki Fujishima

Tetsumaru Fujita

Tsuyoshi Ueno

Nobunari Tsukamoto

Naohiro Ueda

Hirokazu Yanai

Toshihiko Taneda

Akiko Kishimoto

Kouichi Maari

A light deflector includes a movable device; a drive unit configured to drive the movable device; an input wiring board configured to apply electric power from the drive unit to the movable device; and an anisotropic conductive resin film through which the input wiring board is connected to an input part. The movable device includes a movable portion including a reflector, between a pair of drive beams; a pair of supporting parts supporting the pair of drive beams; and a mount unit secured to the pair of supporting parts. The pair of drive beams supports the movable portion to allow the movable portion to oscillate around an oscillation axis. Each of the pair of drive beams includes a beam member and an actuator. At least one of the pair of supporting parts includes the input part to which electric power is input from the input wiring board to the actuator.

Light deflector, distance measuring device, projection device, and mobile object

A movable device includes a movable portion including a reflecting surface; a pair of drive beams to support the movable portion rotatably around a predetermined rotation axis with the movable portion disposed between the pair of drive beams; and a support portion configured to support the pair of drive beams. The support portion has a light passing portion on each of both sides of the movable portion in a direction intersecting with the rotation axis in a plane along the reflecting surface in a state in which the movable portion is not rotated, the light passing portion allowing light reflected by the reflecting surface to pass through the light passing portion.

Movable device, distance measurement device, image projection apparatus, vehicle, and mount

A movable device includes a light deflector including a movable part rotatable about a predetermined axis; a mount including a pair of stationary parts to which the light deflector is secured; and a substrate attached to an opposite side of a light-deflector side of the mount. The substrate has a through hole between the pair of the stationary parts.

Mount, movable device, LiDAR device, image forming apparatus, and image projection apparatus

A semiconductor device that is resin-sealed in a wafer level after a rewiring layer forming process and a metal post forming process forming a metal post are performed on a semiconductor substrate of the semiconductor device includes devices formed on the semiconductor substrate. Further all of the devices are disposed in respective positions other than positions overlapping a peripheral border of the metal post when viewed from a top of the semiconductor substrate.

Semiconductor device having metal posts non-overlapping with other devices and layout method of semiconductor device

Disclosed is a method for drawing a distribution area of data points on a coordinate plane. The method includes a step in which a data point is selected as a first representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a first direction in a rotation direction is selected as a second representative point; a step in which the data point corresponding to a direction in which a minimum angle is formed with respect to a next direction in the rotation direction is selected as a next representative point, the step repeatedly selecting the next representative point; and a step in which the representative points are connected by a line to draw a distribution area indication line.

Method and program for drawing distribution area of data points on coordinate plane

A semiconductor apparatus includes a MOS transistor and a resistive element having insulative first polysilicon and conductive second polysilicon films, an insulating film for a resistive element, and a third polysilicon film. The second polysilicon film is formed in a region adjacent each side edge of the first polysilicon film, and has a contact hole formed therein. The third polysilicon film determines a resistance value of the resistive element, and is continuously formed on the second polysilicon film and the insulating film formed on the first polysilicon film. The MOS transistor is formed in an active region surrounded by the field insulating film, and includes a gate oxide film and a gate electrode including a polysilicon film formed as a lower layer with the second polysilicon film and a polysilicon film formed as an upper layer with the third polysilicon film. A method of making this semiconductor apparatus is also described.

Method of making resistive element having a stable contact resistance

Semiconductor apparatus with a stable contact resistance and a method of making the semiconductor apparatus

A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.

Method for producing semiconductor film

A semiconductor substrate that comprises: a base plate member made from a dielectric material; a refractory metal film covering at least a part of the base plate member; a single crystal semiconductor film formed on the refractory metal film; and an impurities-diffusion layer formed in said single crystal semiconductor film in a side contacting with the refractory metla film. The diffusion layer has a density grade gradually decreasing toward a direction away from the refractory metal film so that this impurities-diffusion layer comes in ohmic contact with the refractory metal film.

Semiconductor substrate and method for producing the same

A method for producing a semiconductor thin film by melt and recrystallization process. At least one recess is formed in a stacked layered structure including a semiconductor thin film layer. The recess has an arrow head shape seen from a surface side of the layered structure. The apex of the arrow head shape is oriented to a forward direction on a scanning line. The surface of the layered structure is covered with a cooling medium so that the recess is filled with the cooling medium. An energy beam is irradiated to the layered structure through the cooling medium to scan the structure along the scanning line so as to melt the semiconductor thin film and after that the semiconductor is cooled and recrystallized to form a single crystal structure therein.

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Hyogo, Japan

Junichi Konishi