Fujitsu Corporation

Junichi Kon

Ei Yano

Koji Nozaki

Miwa Kozawa

Takahisa Namiki

Yoshihiro Nakata

Kozo Makiyama

Hironori Nishino

Ryo Suzuki

Keiji Watanabe

Shirou Ozaki

Tadahiro Imada

Toshihiro Ohki

Norikazu Nakamura

Eiichi Hoshino

Masayuki Takeda

Masahiro Uraguchi

Hiroyasu Yamashita

Toshikatsu Minagawa

Yuichi Yamamoto

Kozi Nozaki

An infrared detector includes a quantum dot structure, and an electrode that is coupled to the quantum dot structure, wherein the quantum dot structure is obtained by stacking a plurality of structures each including a quantum dot, a first barrier layer under the quantum dot and a second barrier layer over the quantum dot to cover the quantum dots, and an intermediate layer under the first barrier layer, and wherein the first barrier layer includes a first region and a second region having a lower Al concentration than that of the intermediate layer between the first region and the intermediate layer.

Infrared detector, imaging device, and imaging system

A photodetector includes a lower contact layer, a first absorber layer that is formed over the lower contact layer and that is photosensitive to light of a first wavelength, an middle contact layer formed over the first absorber layer, a second absorber layer that is formed over the middle contact layer and that is photosensitive to light of a second wavelength, and an upper contact layer formed over the second absorber layer, wherein a barrier layer is formed between the lower contact layer and the first absorber layer, between the first absorber layer and the middle contact layer, between the middle contact layer and the second absorber layer, or between the second absorber layer and the upper contact layer.

Photodetector and imaging device

A material includes a base resin; a solvent; and a foaming agent and a photosensitizer, and/or a substance that serves as a foaming agent and a photosensitizer.

Bump-forming material, method for producing electronic component, method for producing semiconductor device, and semiconductor device

A semiconductor device has a structure including a substrate, a first insulating film formed over a part of a principal plane of the substrate, a conductive portion formed over a surface of the first insulating film, and a second insulating film which covers the principal plane of the substrate, the first insulating film, and the conductive portion and whose moisture resistance is higher than moisture resistance of the first insulating film. The first insulating film is placed between the substrate and the conductive portion to prevent the generation of parasitic capacitance. The first insulating film is covered with the second insulating film whose moisture resistance is higher than the moisture resistance of the first insulating film. The second insulating film prevents the first insulating film from absorbing moisture.

Semiconductor device including insulating films with different moisture resistances and fabrication method thereof

A resist composition includes: a solvent; and a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali, wherein a portion of the resist composition irradiated with an energy radiation is insoluble in a developing solution.

Resist composition and method for forming pattern

A method for manufacturing a compound semiconductor device, the method includes: forming a compound semiconductor laminated structure; removing a part of the compound semiconductor laminated structure, so as to form a concave portion; and cleaning the inside of the concave portion by using a detergent, wherein the detergent contains a base resin compatible with residues present in the concave portion and a solvent.

Method for manufacturing compound semiconductor device and detergent

A semiconductor device includes an insulation layer, a first semiconductor element and a second semiconductor element which are disposed within the insulation layer, a frame which has higher thermal conductivity than the insulation layer and surrounds the first semiconductor element and the second semiconductor element via the insulation layer, and a wiring layer which is disposed over the insulation layer and includes an electrode which electrically connects the first semiconductor element and the second semiconductor element.

Semiconductor device, semiconductor device manufacturing method, and electronic device

A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.

Method of manufacturing semiconductor device and method of cleaning semiconductor substrate

A material for forming a resist sensitization film contains a metal salt, a resin and, a solvent. A method for producing a semiconductor device contains applying such material (or a resist) onto a processing surface so as to form a resist sensitization film or a resist film, applying a resist (or the aforementioned material) onto the resist sensitization film so as to form a resist film (or a resist sensitization film); exposing the resist film (or the resist film and the resist sensitization film) to exposure light, and developing the exposed resist film (or the exposed resist film and resist sensitization film) so as to form a resist pattern; and etching the processing surface using the resist pattern as a mask so as to pattern the processing surface.

Material for forming resist sensitization film and production method of semiconductor device

To provide a surface coating method, which contains applying a surface coating material to a layered structure so as to cover at least a surface of an insulating film of the layered structure, to form a coating on the surface of the insulating film, wherein the surface coating material contains a water-soluble resin, an organic solvent, and water, and wherein the layered structure contains the insulating film exposed to an outer surface, and a patterned metal wiring exposed to an outer surface.

Surface coating method, semiconductor device, and circuit board package

A material for forming a conductive antireflection film contains: a base resin having conductivity; a crosslinking agent; a thermal acid generator; and a solvent.

Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head

A resist pattern thickening material has resin, a crosslinking agent and a compound having a cyclic structure, or resin having a cyclic structure at a part. A resist pattern has a surface layer on a resist pattern to be thickened with etching rate (nm/s) ratio of the resist pattern to be thickened the surface layer of 1.1 or more, under the same condition, or a surface layer to a resist pattern to be thickened. A process for forming a resist pattern includes applying the thickening material after forming a resist pattern to be thickened on its surface. A semiconductor device has a pattern formed by the resist pattern. A process for manufacturing the semiconductor device has applying, after forming a resist pattern to be thickened, the thickening material to the surface of the resist pattern to be thickened, and patterning the underlying layer by etching, the pattern as a mask.

Manufacturing process of semiconductor device

To provide a resist composition capable of prevention of the formation of abnormal resist pattern shapes for efficient, high-precision formation of fine, high-resolution resist patterns, a resist pattern forming process capable of efficient, high-precision formation of finer, high-resolution resist patterns by using the resist composition, and a method for manufacturing a semiconductor device. The resist composition of the present invention includes a base resin, a photoacid generator, a first additive, and a second additive, wherein the pKa of the second additive is higher than the pKa of the first additive, and at a resist formation temperature, the vapor pressure of the second additive is lower than the vapor pressure of the first additive.

Resist composition, resist pattern forming process, and method for manufacturing semiconductor device

To provide a method for easily forming microscopic patterns exceeding the limit of exposure in the patterning technique utilizing the photolithography method in the vacuum deep ultraviolet ray region, a resist pattern swelling material is comprised by mixing a water-soluble or alkali-soluble composition comprising a resin and a cross linking agent and any one of a non-ionic interfacial active agent and an organic solvent selected from a group of the alcohol based, chain or cyclic ester based, ketone based, chain or cyclic ether based organic solvents.

Resist pattern swelling material, and method for patterning using same

Technologies to form fine resist patterns consistently by solving the problem of poor patterning influenced by a resist-protecting film, are provided. A layer made of a resist (resist layer) is formed on a substrate, a resist-protecting film comprising an antistatic resin and a photo-acid generating agent is formed on the resist layer, and active-energy rays are selectively irradiated over the resist-protecting film, so that a resist pattern is formed by developing the resist.

Growing community of inventors

Kawasaki, Japan

Junichi Kon