Matsushita Electric Industrial Co., Ltd.

Other

Panasonic Corporation

Halo Lsi Design and Device Technologies, Inc.

Konica Minolta, Inc.

Matsushita Electronics Corporation

Halo Lsi Design and Devices Technologies Inc.

Junichi Kato

Hiroshi Kagata

Atsushi Hori

Tatsuya Inoue

Seiki Ogura

Osamu Inoue

Shinji Odanaka

Keiji Nishimoto

Kaori Akamatsu

Masamitsu Nishida

Ichiro Kameyama

Yoichiro Yokotani

Takeshi Takahashi

Kojiro Okuyama

Nobuya Matsutani

Hiroshi Fujii

Hiromu Ouchi

Yoichirou Yokotani

Seiichi Nakatani

Yasuhiro Sugaya

Osamu Kawasaki

Katsu Takeda

Keiichi Takahashi

Katsunori Moritoki

Kouji Kawakita

Masayoshi Nakayama

Tetsuro Otsuchi

Toshihiro Mihara

Koji Yoshida

Koichi Hirano

Takuya Ishii

Hisashi Minemoto

Toshiyuki Asahi

Koichi Kugimiya

Kenji Iijima

Tsuneharu Nitta

Koetsu Saito

Hiroyuki Hase

Takashi Kanda

Shinichiro Kurihara

Syunichiro Kawashima

Iwao Ueno

Tsutomu Nishimura

Hiroshi Sogou

Tomoaki Mannami

Yuichirou Hirowatari

Kouichi Kugimiya

Yukio Terada

Youichiro Yokotani

Hiroshi Sogo

Norio Hattori

Akira Sugimoto

Asako Miyoshi

Takao Ozeki

Yoshimasa Yabu

Koji Saeki

Shinichi Hatakeyama

Ichirou Kameyama

Hiroshi Niwa

Masashi Ozawa

The ultrasound probe includes a piezoelectric element including a piezoelectric composition and an electrode that applies a voltage to the piezoelectric composition. The piezoelectric composition has piezoelectric characteristics expressed by any coordinates included in a region formed by a polyhedron having a plurality of predetermined points as vertexes in Cartesian coordinates (k, &#x3b5;, E) including variables k, &#x3b5;and E.

Piezoelectric element, ultrasound probe and ultrasound imaging apparatus

A lighting device includes a pyroelectric sensor, a shutter and a lighting control unit. The lighting control unit is configured, when the lighting load is turned off, to turn the lighting load on if the pyroelectric sensor detects a change in infrared radiation. The lighting control unit is also configured, when the lighting load is turned on, to turn the lighting load off if a repetition count or time of a lighting retention time reaches a specified count or time, respectively, with no change in infrared radiation detected through the pyroelectric sensor within each lighting retention time per the passage of lighting retention time.

Lighting device, lighting control device and lighting system

A light-emitting device according to the present invention includes: first insulators () arranged so as to face each other; an emitter () arranged between the first insulators; a second insulator () functioning as a base for the first insulators and the emitter; an electrode () arranged to face, or contact with, the first insulators partially; another electrode () contacting with the second insulator and interposing the second insulator between the electrode and itself; and a light-transmitting substrate () that faces the second insulator with the first insulators interposed somewhere and with the emitter interposed elsewhere. If the first insulators are extended to reach the light-transmitting substrate on a cross section including the first and second insulators, the emitter and the light-transmitting substrate, the ratio of the cross-sectional area of the emitter to the combined cross-sectional area of the first and second insulators and the light-transmitting substrate is defined so as to fall within a predetermined range.

Light-emitting device configured to emit light by a creeping discharge of an emitter

A memory cell array with a group of memory cells capable of retaining two-bit information. Each memory cell has a pair of transistors having charge storage regions, mutually connected gates, and mutually connected sources. Word lines are provided to the gates of the transistors. Bit lines are provided to the sources and drains of the transistors. A pair of the bit lines respectively connected to the drains of a pair of transistors included in a memory cell are connected to a comparison input terminal of the differential detector. An information retained in the memory cell is read based on a comparison result of current amounts inputted to the differential detector via the pair of bit lines obtained by the differential detector in a state where memory cell currents are simultaneously and independently supplied to the pair of transistors.

Non-volatile semiconductor memory device

The present invention provides a composite magnetic body containing metallic magnetic powder and thermosetting resin and having a packing ratio of the metallic magnetic powder of 65 vol % to 90 vol % and an electrical resistivity of at least 10&#x3a9;&#xb7;cm. When a coil is embedded in this composite magnetic body, a miniature magnetic element can be obtained that has a high inductance value and is excellent in DC bias characteristics.

Method of manufacturing a magnetic element

A switch section connects a first wire line aSL to the gate of a first memory transistorand the source of a second memory transistorand a second wire line bSL to the source of the first memory transistorand the gate of the second memory transistorwhen first type data is to be written into a memory cell; and connects the first wire line aSL to the source of the first memory transistorand the gate of the second memory transistorand the second wire line bSL to the gate of the first memory transistorand the source of the second memory transistorwhen second type data is to be written into a memory cell.

Composite magnetic body, and magnetic element and method of manufacturing the same

A dielectric ceramic composition containing a first component and a second component (25 to 80 wt %) is used. The first component is a complex oxide represented by Formula: xZrO -yTiO -zL M O (L is at least one element selected from the group consisting of Mg, Zn, Co, and Mn, and M is at least one element selected from the group consisting of Nb and Tb. x, y, z, and u are numerical values represented by x&plus;y&plus;z&equals;1, 0.10&lE;x&lE;0.60, 0.20 &lE;y&lE;0.60, 0.01&lE;z&lE;0.70, 0&lE;u&lE;1.90). The second component is a glass composition containing an oxide of at least one element selected from the group consisting of Si, B, Al, Ba, Ca, Sr, Zn, Ti, La, and Nd.

Dielectric ceramic composition and dielectric device

The present invention provides a composite magnetic body containing metallic magnetic powder and thermosetting resin and having a packing ratio of the metallic magnetic powder of 65 vol % to 90 vol % and an electrical resistivity of at least 10 &OHgr;&middot;cm. When a coil is embedded in this composite magnetic body, a miniature magnetic element can be obtained that has a high inductance value and is excellent in DC bias characteristics.

A dielectric ceramic is made of a sintered body of a complex oxide including at least one element selected from the group consisting of Zr, Ti and Mn, at least one element selected from the group consisting of Mg, Zn and Co, and at least one element selected from the group consisting of Nb and Ta, wherein, the complex oxide is represented by a formula xZrO -yTiO -zA B O where 'A' in the formula denotes at least one element selected from the group (A) consisting of Mg, Zn and Co, 'B' denotes at one element selected from the group (B) consisting of Nb and Ta; x, y, z and w denote values in the respective ranges of 0.20&lE;x&lE;0.55, 0.40&lE;y&lE;0.55, 0.05&lE;z&lE;0.25, and 0&lE;w&lE;0.30, and x, y and z have a relationship represented as x&plus;y&plus;z&equals;1; MnO is present in a range of 0.1 mol % to 1.0 mol % to the complex oxide; and an average grain size of the dielectric ceramic is from 10 &mgr;m to 70 &mgr;m, thereby providing a dielectric ceramic that has a high dielectric constant (&egr;r) and an unloaded (Qu) value even in a comparatively low frequency region as a microwave region i.e., in a range of 0.4 GHz to 2.4 GHz and that realizes a desired temperature coefficient (&tgr;f) of a resonant frequency with a high mechanical strength, and thus a dielectric device using the dielectric ceramic is provided.

Dielectric ceramic and dielectric device

A green sheet including a binder containing an acrylic resin having no polar group and a ceramics material in powder is prepared, and connection via are formed in the green sheet. Further, a conductor layer having virtually no voids is placed on the green sheet and a mask is also placed on the conductor layer. Then, the conductor layer is patterned by wet-etching so that wiring is formed thereon. A plurality of the green sheets thus formed are laminated, and a binding sheet, which contains an inorganic composition that has virtually no sintering shrinkage at the firing temperature of the multi-layered body as a main component, is formed on either both surfaces or one surface of the laminated body, and this is then fired, and thereafter, the binding sheet is removed.

Green sheet and manufacturing method thereof, manufacturing method of multi-layer wiring board and manufacturing method of double-sided wiring board

Green sheet and manufacturing method thereof, manufacturing method of multi-layer wiring board, and manufacturing method of double-sided wiring board

The present invention provides a piezoelectric ceramic composition that can be manufactured easily by an ordinary sintering method, is free from lead, and has a large frequency constant, a small grain size, and a high mechanical Q. This composition is expressed by a formula of (1-v-w)&lsqb;(Li Na K ) RO &rsqb;.vLMnO .wBi Na TiO . The present invention also provides a piezoelectric ceramic composition, including at least one selected from Mn, Cr, and Co that is added to a composition expressed by a formula of (Li Na K ) RO so as to have a ratio thereof to the whole of 0.01 to 1 wt % in terms of MnO , Cr O , and CoO, respectively. In the above-mentioned formulae, 0&lE;v&lE;0.05, 0&lE;0.2, v&plus;w>0, 0.2&lE;x&lE;0.97, 0&lE;y&lE;0.8, x&plus;y&gE;0.8, 0.98&lE;z&lE;1, L indicates at least one element selected from the rare earth elements, and R denotes at least one element selected from Nb, Ta, and Sb.

Piezoelectric ceramic composition and piezoelectric element containing the same

The present invention provides a piezoelectric ceramic composition that is free from lead and has a small grain size, a high coupling coefficient, a high mechanical Q, and a large frequency constant. This composition is characterized by being expressed by a formula of (Li Na K ) Ma Nb Mb O , wherein 0.03&lE;x&lE;0.2, 0&lE;y&lE;0.2, 0.98&lE;z&lE;1, 0<w&lE;0.05, Ma indicates at least one element selected from the alkaline-earth metals, and Mb denotes at least one element selected from Bi, Sb, and the rare earth elements.

Growing community of inventors

Osaka, Japan

Junichi Kato