Rohm Co., Ltd.

Junichi Kashiwagi

Atsushi Yamaguchi

Shinya Takado

Yohei Moriyama

Ken Nakahara

Yusuke Nakakohara

Yuta Okawauchi

Hirokatsu Umegami

A semiconductor rectifier includes a transistor and a diode. The transistor includes a source electrode, a drain electrode and a gate electrode. The diode includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the gate electrode, and the cathode electrode is electrically connected to the source electrode.

Semiconductor rectifier

A ripple injection circuit equipped with: a capacitor that passes a frequency component of an input voltage or a frequency component of an output voltage and that generates a first ripple voltage having a first ripple component; and an integration circuit that integrates a comparison result signal and that generates a second ripple voltage having a second ripple component. The first ripple component and the second ripple component are added to a feedback voltage.

Ripple injection circuit and electronic device equipped with this circuit

According to a first aspect of the present disclosure, a semiconductor device is provided. The semiconductor device includes a first transistor, a second transistor, at least one source terminal, at least one gate terminal, at least one drain terminal, a source wire, a gate wire, a drain wire and a support part. The support part includes two first support-part edges and two second support-part edges. Each of the two first support-part edges is parallel to a first direction, and the two first support-part edges are spaced apart from each other in a second direction that is perpendicular to the first direction. Each of the two second support-part edges is physically connected to the two first support-part edges. The source wire, the gate wire and the drain wire cross at least one of the two second support-part edges in plan view.

Semiconductor device with first and second transistors and support part

A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlGaN layer (0&#x2266;X&#x3c;1) are laminated periodically, the superlattice layer contacting the active layer and having an average refractive index of 2.6 or lower. The In composition of the InGaN layer is lower than that of the InGaN quantum well layer.

Semiconductor laser device

A semiconductor laser device generates blue-violet light with an emission wavelength of 400 to 410 nm. The device includes an n-type group III nitride semiconductor layer, an active layer laminated on the n-type semiconductor layer and having an InGaN quantum well layer, a p-type group III nitride semiconductor layer laminated on the active layer, and a transparent electrode contacting the p-type semiconductor layer and serving as a clad. The n-type semiconductor layer includes an n-type clad layer and an n-type guide layer disposed between the clad layer and the active layer. The guide layer includes a superlattice layer in which an InGaN layer and an AlGaN layer (0&#x2266;x&#x3c;1) are laminated periodically, the superlattice layer contacting the active layer and having an average refractive index of 2.6 or lower. The In composition of the InGaN layer is lower than that of the InGaN quantum well layer.

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Kyoto, Japan

Junichi Kashiwagi