Fujitsu Corporation

Nissan Motor Company Limited

Spansion Llc.

Kyushu Fujitsu Electronics Limited

Fujitsu Automation Limited

Cypress Semiconductor Corporation

Clarion Co

Other

Niles Parts Company, Ltd.

Micronics Japan Co., Ltd.

Fujistsu Limited

Spansion Japan Limited

Kyushu Fujitsu Elecronics Limited

Junichi Kasai

Kazuto Tsuji

Masanori Onodera

Michio Sono

Yoshiyuki Yoneda

Kouichi Meguro

Yasuhiro Shinma

Mitsutaka Sato

Junji Tanaka

Toshimi Kawahara

Koji Taya

Ryuji Nomoto

Masanori Yoshimoto

Hiroshi Imai

Hideharu Sakoda

Masao Sakuma

Mitsunada Osawa

Norio Taniguchi

Masataka Mizukoshi

Takayuki Yanagishima

Tetsuya Fujisawa

Masashi Takenaka

Ichiro Yamaguchi

Koki Otake

Kazuhiko Mitobe

Naomi Masuda

Shinichirou Taniguchi

Mayumi Osumi

Yoshitugu Katoh

Takashi Mashiko

Tsuyoshi Aoki

Seiichi Orimo

Masataka Hoshino

Yukio Saigo

Kouji Saito

Hiroyuki Ishiguro

Shigeyuki Maruyama

Hiroshi Tsuda

Yasuo Yamagishi

Hirohisa Matsuki

Nobuo Kamehara

Tatsuya Watanabe

Masayuki Ochiai

Hiroshi Yoshimura

Yoshiaki Murakami

Toshiyuki Motooka

Masaaki Seki

Katsuhiro Hayashida

Shinya Nakaseko

Ryota Fukuyama

Akio Ajimine

Yoshimi Suzuki

Hidefumi Ueda

Susumu Abe

Akimitsu Shino

Akira Takashima

Toshio Hamano

Toshiyuki Honda

Yoshihiro Kubota

Masaki Waki

Tetsuya Hiraoka

Masahiko Harayama

Masahiko Ishiguri

Tosiyuki Honda

Yuji Sakurai

Murugasan Manikam Achari

Wataru Yagihashi

Kenji Itasaka

Terumi Kamifukumoto

Kosuke Otokita

Kouichi Takeshita

Sinya Nakaseko

Kouichi Meghro

Lim Cheang Hai

Hiroshi Watanabe

Hideaki Horie

Atsushi Hatakeyama

Yutaka Yamada

Haruhiko Iizuka

Yasunori Fujimoto

Eiji Watanabe

Hiroshi Ueno

Norio Fukasawa

Fumio Baba

Yoshitaka Aiba

Muneharu Morioka

Hiroya Fujimoto

Kazuyuki Imamura

Hiroyuki Kamishima

Satoshi Kawai

Kunihiko Kurami

Tadashi Uno

Akihiro Kubota

Taturou Yamashita

Seiji Shimodaira

Noriaki Shiba

Masahiro Yoshikawa

Masaaki Taniguchi

Takehiko Saito

Masahiko Teramoto

A semiconductor device includes a semiconductor chip, a bump contract, and encapsulating layer, an insulating layer, and a connection terminal.

Semiconductor device and method of manufacturing the same

A vehicle guidance device has a stopping vehicle detector configured to detect stopping vehicles failing to pass through a traffic light while a light is green, the traffic light being installed beside a plurality of lanes extending in a same direction, an information acquisition unit configured to acquire a starting characteristic of each detected vehicle, and a simultaneous passage line calculator configured to calculate a simultaneous passage line including a first line and a second line based on the acquired starting characteristics, when a vehicle having a lower starting characteristic than a reference starting characteristic is included in the vehicles stopping on a first lane included in the plurality of lanes, and when a vehicle having a higher starting characteristic than starting characteristics of the vehicles on the first lane is included in the vehicles stopping on a second lane included in the plurality of lanes.

Vehicle guidance device and vehicle guidance method

A semiconductor device includes a semiconductor chip, a bump electrode, a molding portion, a redistribution layer and an outer connection electrode. The bump electrode is provided on an upper face of the semiconductor chip. The molding portion encapsulates an entire side face of the semiconductor chip and seals the bump electrode so that a part of the bump electrode is exposed. The redistribution layer is provided on an upper face of the molding portion and is electrically coupled to the semiconductor chip via the bump electrode. The outer connection electrode is provided on an upper face of the redistribution layer and is electrically coupled to the bump electrode via the redistribution layer.

The present invention provides a semiconductor device including: a semiconductor chip; a lead frame provided with a recessed portion on at least one of an upper surface or a lower surface thereof, and electrically coupled to the semiconductor chip; and a resin section that molds the semiconductor chip and the lead frame, and is provided with an opening above the recessed portion. By inserting a conductive pin (not shown) into the recessed portion through the opening, a plurality of semiconductor devices can be mechanically and electrically coupled to each other.

Semiconductor device and method for manufacturing thereof

A method of fabricating a semiconductor device includes the steps of providing a heat-resistant sheet on an interposer so as to cover electrode terminals provided on the interposer, and sealing a semiconductor chip on the interposer sandwiched between molds with a sealing material. The electrode terminals are covered by the heat-resistant resin for protection, and the semiconductor chip is then sealed with resin. It is thus possible to avoid the problem in which contaminations adhere to the electrode terminals. This makes it possible to prevent the occurrence of resin burrs on the interposer and contamination of the electrode pads and to improve the production yield.

Method of fabricating a semiconductor device used in a stacked-type semiconductor device

The present invention provides a semiconductor device that includes: stacked semiconductor chips, each semiconductor chip including a semiconductor substrate and a first insulating layer that is provided on side faces of the semiconductor substrate and has concavities formed on side faces thereof; first metal layers that are provided in center portions of inner side faces of the concavities; and second metal layers that are provided in the concavities and are connected to the first metal layers formed on each semiconductor chip. The present invention also provides a method of manufacturing the semiconductor device.

A method of producing a carrier structure for fabricating a stacked-type semiconductor device includes laminating thin plates for a lower carrier associated with an upper carrier. The method includes forming openings in the thin plates by etching or electric discharge machining. The lower carrier includes a magnet that is buried therein and the magnet maintains contact between the lower carrier and the upper carrier. A thin plate of the laminated thin plates is provided on each opposing surface of the magnet. The lower carrier further includes multiple magnets arranged around a periphery of the lower carrier and through a center region of the lower carrier that is between magnets on the periphery.

Carrier structure for stacked-type semiconductor device, method of producing the same, and method of fabricating stacked-type semiconductor device

A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.

Semiconductor device and manufacturing method therefor

System and method for stacking a plurality of electrically coupled semiconductor chips with a conductive pin

A method in accordance with an embodiment of the invention can include forming fan-out wirings on an insulating layer formed on a wafer. Additionally, electrodes of a plurality of semiconductor chips stacked on the fan-out wirings can be electrically coupled with the fan-out wirings. The wafer can be removed.

Manufacturing stacked semiconductor device

Structures, methods, and systems for assessing bonding of electrodes in FCB packaging are disclosed. In one embodiment, a method comprises mounting a semiconductor chip with a plurality of first electrodes of a first shape to a mounted portion with a second electrode of a second shape, wherein the second shape is different from the first shape, bonding a respective one of the plurality of first electrodes and the second electrode using a first solder bump, generating an X-ray image of the first solder bump, and determining an acceptability of the bonding of the respective one of the plurality of first electrodes and the second electrode based on the X-ray image of the first solder bump.

Structure, method and system for assessing bonding of electrodes in FCB packaging

A method of fabricating a semiconductor device includes: mounting a semiconductor chip on a substrate; forming an upper connection terminal on a side of the substrate on which the semiconductor chip is mounted; forming a resin seal portion that seals the semiconductor chip and the upper connection terminal so that an upper surface of the upper connection terminal is exposed; and shaping the upper connection terminal so that the upper surface of the upper connection terminal becomes lower than an upper surface of the resin seal portion.

Semiconductor device and method of fabricating the same

An IC device () held on an IC carrier () is a double-sided electrode type BGA IC device () provided with bump electrodes () on a first surface of a package. The IC device has, on a second surface opposite the first surface, (a) a central protrusion (), (b) a peripheral portion () lower than the protrusion by one step, and (c) upper electrodes () formed on the peripheral portion of the IC device. The IC carrier is provided with a frame (), a cover (), and a holding means (). The frame forms a device reception space () for receiving the IC device. The cover can cover the upper electrodes while in contact with the periphery of the IC device held on the IC carrier. The holding means can hold the IC device on the IC carrier with the cover covering the upper electrodes of the IC device. The IC device can be set in an IC socket while being mounted on the IC carrier.

IC carrie, IC socket and method for testing IC device

Growing community of inventors

Kawasaki, Japan

Junichi Kasai