Kioxia Corporation

Junichi Kaneyama

Hiroyuki Yamashita

Kazuhiro Matsuo

Shinji Mori

Kenichiro Toratani

Keiichi Sawa

Yuta Saito

Kota Takahashi

Tomoki Ishimaru

Yuta Kamiya

Ha Hoang

Takafumi Ochiai

Natsuki Fukuda

Takashi Kurusu

Shouji Honda

Ryota Narasaki

Shoji Honda

A semiconductor device includes a plurality of electrode layers separated from each other in a first direction, a charge storage layer provided on side surfaces of the plurality of electrode layers via a first insulating film, and a semiconductor layer provided on a side surface of the charge storage layer via a second insulating film. The charge storage layer includes a location having a fluorine concentration of 5.0×10atoms/cmor less. A fluorine concentration at an interface between the charge storage layer and the second insulating film is 10 times or more or 1/10 or less of a fluorine concentration at an interface between the charge storage layer and the first insulating film.

Semiconductor device and method for manufacturing same

A semiconductor storage device includes a first conductive layer that extends in a first direction; a second conductive layer that extends in the first direction and is arranged with the first conductive layer in a second direction; a first insulating layer that is provided between the first conductive layer and the second conductive layer; a semiconductor layer that extends in the second direction and faces the first conductive layer, the second conductive layer, and the first insulating layer in a third direction; a first charge storage layer that is provided between the first conductive layer and the semiconductor layer; a second charge storage layer that is provided between the second conductive layer and the semiconductor layer; a first high dielectric constant layer that is provided between the first conductive layer and the first charge storage layer; and a second high dielectric constant layer provided between the second conductive layer and the second charge storage layer. At least a portion of the first charge storage layer faces the second charge storage layer without the second high dielectric constant layer being interposed between the portion of the first charge storage layer and the second charge storage layer in the second direction.

Semiconductor storage device

According to one embodiment, a semiconductor storage device includes a plurality of electrode films on a substrate, spaced from one another in a first direction. A charge storage film is provided on a side face the electrode films via a first insulating film. A semiconductor film is provided on a side face of the charge storage film via a second insulating film. The charge storage film includes a plurality of insulator regions contacting the first insulating film, a plurality of semiconductor or conductor regions provided between the insulator regions and another insulator region.

Semiconductor storage device and method for manufacturing semiconductor storage device

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Yokkaichi Mie, Japan

Junichi Kaneyama