Sony Corporation

Junichi Hojo

Toshiaki Wakayama

Naoki Kato

Kazuhide Fujikawa

In a horizontal transfer section of a solid state imager, a horizontal transfer efficiency can be improved while other element sections are prevented from being substantially affected. In a solid state imager having a horizontal transfer section comprised of a well-region of a second conductivity type formed on the surface of a semiconductor substrate of a first conductivity type and a signal charge transfer region formed on the surface of the well-region of the second conductivity type, the well-region is formed completely in a depletion state by the implantation of impurities into this well-region. The horizontal transfer efficiency is thus improved.

Method of making a high efficiency horizontal transfer section of a

A charge-coupled device (CCD) imager is comprised of a CCD image sensor, a horizontal register for delivering an image signal from the CCD image sensor, the horizontal register being formed of an effective bit portion corresponding to the CCD image sensor and first and second dummy bit portions of a predetermined length which are located at both sides of the effective bit portion, and first and second output portions provided in succession to the first and second dummy bit portions to provide a positive image signal and a mirror image signal, wherein the effective bit portion is provided with four bus lines through which a transfer clock is supplied to the horizontal register and the first and second dummy bit portions are provided with two bus lines through which a transfer clock is supplied to the horizontal register. Thus, the CCD imager can be simplified in arrangement and a undesirable charge can be prevented from being mixed into a signal charge.

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Kanagawa, Japan

Junichi Hojo