Kabushiki Kaisha Toshiba

Kioxia Corporation

Kddi Corporation

Junichi Hashimoto

Mitsuhiro Omura

Toshiyuki Sasaki

Yuya Matsubara

Soichi Yamazaki

Takehiro Kondoh

Koichi Ito

Tadashi Iguchi

Kei Watanabe

Katsunori Yahashi

Koichi Okita

Daigo Ichinose

Yasuyoshi Hyodo

Kosuke Horibe

Shingo Maruyama

Takamichi Tsuchiya

Yusuke Kondo

Kaori Narumiya

Junya Fujita

A film processing method includes forming a target film, the target film having an upper surface. The method includes forming a carbon film on the upper surface of the target film. The method includes performing a first etching to format least one recess in the target film, with the carbon film serving as a mask. The method includes performing a second etching, by directing an ion beam through the at least one recess, to increase a depth of the at least one recess.

Film processing method and semiconductor device manufacturing method

A method of manufacturing a semiconductor device includes: preparing a stepped structure being arranged on a substrate, the stepped structure including a first region and a second region, a height of the stepped structure of the second region being lower than a height of the stepped structure of the first region; and etching the first region and the second region of the stepped structure by irradiating the first region and the second region with an ion beam, an irradiation amount of the ion beam irradiating the first region is larger than an irradiation amount of the ion beam irradiating the second region.

Method of manufacturing semiconductor device and ion beam irradiation apparatus

A method for manufacturing a semiconductor device includes: forming a first film on a substrate; forming a second film containing at least carbon on the first film; forming a hole in the second film; and forming a recess, which communicates with the hole, in the first film by etching using the second film as a mask. In this method, the second film includes a first layer formed on the first film, and a second layer formed on the first layer. The first layer having a higher oxygen concentration than the second layer.

Method for manufacturing semiconductor device having a film with layers of different concentrations of elements

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Manufacturing method of semiconductor device

A communication control device according to one embodiment of the present invention includes: a storage unit configured to store conditions for setting a profile used by a communication device for communication; a profile setting unit configured to start to set the profile for the communication device in a case in which a signal received from the communication device satisfies the conditions stored in the storage unit; and a condition setting unit configured to invalidate the conditions stored in the storage unit in a case in which the profile setting unit starts to set the profile and configured to validate conditions for setting a profile used by the communication device for communication in a case in which the profile setting unit has failed in setting the profile.

Communication control device, communication setting method, communication setting program, and communication system

According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body including a plurality of first layers and a plurality of second layers on a substrate. The method includes forming a first slit and a second slit simultaneously by dry-etching the stacked body. The first slit causes a part of the stacked body to have a comb-shaped pattern including a plurality of line parts isolated in a first direction and extending in a second direction. The second slit surrounds the comb-shaped pattern with a closed pattern. The method includes forming a hole in the line parts of the stacked body. The method includes forming a charge storage film and a semiconductor body in the hole.

Method for manufacturing semiconductor memory device

A semiconductor device manufacturing method includes: stacking a plurality of electrode layers containing a semiconductor alternately with insulating layers; processing part of a multilayer body of the electrode layers and the insulating layers into a staircase shape and exposing a surface of the staircase-shaped electrode layers; forming a metal film in contact with the exposed electrode layers; reacting the semiconductor of the electrode layers with the metal film to form a metal compound in at least a portion of the electrode layers in contact with the metal film; removing an unreacted portion of the metal film; forming an interlayer insulating layer covering the staircase-shaped electrode layers after removing the unreacted portion of the metal film; forming a plurality of contact holes piercing the interlayer insulating layer, each of the contact holes reaching the metal compound of the electrode layer at a corresponding stage; and providing a plurality of contact electrodes inside the contact holes.

Semiconductor device manufacturing method and semiconductor device

A semiconductor device manufacturing method includes: depositing a first insulating film and a second insulating film on a substrate sequentially and forming a pattern on the second insulating film; forming a silicon film on the pattern; forming a sidewall made of the silicon film by processing the silicon film until a part of the second insulating film is exposed by use of etch-back; removing the second insulating film; and performing dry etching by use of a fluorocarbon-based gas, to process the first insulating film by using the sidewall as a mask. The processing of the first insulating film includes applying on the substrate a self-bias voltage Vdc that satisfies a relational expression of Vdc&#x3c;46x&#x2212;890, where a film thickness of the silicon film that constitutes the sidewall is x nm (19.5&#x2266;x&#x2266;22.1).

Manufacturing method of semiconductor devices

A semiconductor device includes: a stacked body with a plurality of conductive layers and a plurality of dielectric layers alternately stacked therein, the stacked body including a staircase structure having the plurality of conductive layers processed into a staircase shape; an interlayer dielectric layer covering the staircase structure; and a contact electrode provided inside a contact hole penetrating through the interlayer dielectric layer, the contact hole penetrating through one of the staircase-shaped conductive layers, the contact electrode being in contact with a sidewall portion of the one of the staircase-shaped conductive layers exposed into the contact hole.

Semiconductor device and method for manufacturing same

The present invention concerns electronic equipment having a liquid crystal display that is capable of reducing the external size of the electronic equipment by reducing installation space, while increasing display area. A display part and a pattern wiring area of a liquid crystal display are comprised of films and an edge part defining an area of the liquid crystal display. Moreover, display portion includes a display surface facing a display window of the electronic equipment and extending along a horizontal direction, and at least one pattern wiring area defining a peripheral edge of the display portion, the pattern wiring area being bent such that the at least one pattern wiring area extends along a vertical direction.

Growing community of inventors

Yokkaichi Mie, Japan

Junichi Hashimoto