Canon Kabushiki Kaisha

Dai Nippon Printing Co., Ltd.

Tokyo Institute of Technology

Hitachi, Ltd.

Dic Corporation

Mita Industrial Co., Ltd.

Dic Corporation (tokyo)

Junichi Hanna

Isamu Shimizu

Masaaki Hirooka

Shunichi Ishihara

Hiroki Maeda

Kyoko Kogo

Hiroaki Iino

Masahiro Funahashi

Keishi Saitoh

Komei Kafuku

Masahiro Kanai

Masanori Akada

Shigeru Sugawara

Masatoshi Wakagi

Masayuki Ando

Hirokazu Ohtoshi

Yozo Kosaka

Masao Ueki

Akira Oono

Yukiko Takayashiki

Takeo Kobori

Mutsuko Hatano

Isao Suzumura

Toshio Yoshihara

Etsuko Nishimura

Kenichi Onisawa

Tetsuo Kusumoto

Mieko Matsumura

Hiroshi Kokado

Kaname Nakatani

Yoshio Aoki

Ken Tomino

Takayuki Usui

Eiji Takeuchi

Yoshinobu Sakurai

Atsuhisa Miyawaki

Junichiro Koike

Hiroshi Maki

Akiko Kagatsume

Aya Ishizuka

Yasuyuki Watanabe

Hirokazu Ootoshi

Akihiko Nakasa

Yutaka Tachikawa

Keisha Saitoh

Hidehiro Nakagawa

The purpose of the present invention is to provide an organic semiconductor material having liquid crystallinity and high electron mobility. The present invention is an organic semiconductor material having at least a charge-transporting molecular unit (A) having a structure of an aromatic fused ring system and a cyclic structural unit (B) bonded to the aforementioned unit via a single bond, wherein the unit (A) and/or the unit (B) has a side chain composed of a unit (C), and wherein the organic semiconductor material exhibits a liquid crystal phase that is different from an N-phase, an SmA-phase or an SmC-phase.

Organic semiconductor material

The present invention provides an organic thin film and an organic transistor having high performance stability and mobility. Specifically, there are provided an organic thin film including a compound containing a charge transporting molecular unit A having a structure of an aromatic fused ring system and a unit B serving as a side chain, the compound having a bilayer structure; an organic semiconductor device including the organic thin film; and an organic transistor including the organic thin film used as an organic semiconductor layer.

Organic thin film, and organic semiconductor device and organic transistor using same

Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450&#xb0; C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Semiconductor device, manufacturing method thereof, and display apparatus using the semiconductor device

In a thin film transistor, a semiconductor layer containing Si and Ge is applied, a Ge concentration of this semiconductor layer is high at the side of the insulating substrate, and crystalline orientation of the semiconductor layer indicates a random orientation in a region of 20 nm from the side of the insulating substrate, and indicates a (111), (110) or (100) preferential orientation at the film surface side of the semiconductor layer.

Thin film transistor and organic electroluminescence display using the same

An organic semiconductor device Including an organic semiconductor layer in a crystallized crystal state is disclosed. The organic semiconductor layer is formed from an organic semiconductor material including a liquid crystal molecule. The semiconductor material has properties capable of exhibiting a supercooled state during a phase transition process, in which a phase having no periodic regularity is capable of being transferred into a phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules. The phase having no periodic regularity at a location of a center of gravity In between the liquid crystal molecules is a nematic liquid crystal phase and the phase having periodic regularity at a location of a center of gravity in between the liquid crystal molecules is a crystal phase.

Organic semiconductor structure, manufacturing method of the same, and organic semiconductor device

A novel information recording medium is provided which records information upon the application of thermal energy, reads the recorded information by detecting the value of photoelectric current generated by light applied to the information recorded portion, and can realize multi-valued information recording or analog information recording. The information recording medium comprises: a pair of electrodes; and a liquid crystal material filled into a gap between the electrodes, the liquid crystal material having a property such that the charge-transport properties are varied according to the phase transfer between a plurality of stable liquid crystal phases of the liquid crystal and/or the history of the phase transfer.

Information recording medium

The main object of the invention is to provide an organic semiconductor material whose material designing is easy, and is capable to secure satisfying purity, so that it can be easily used industrially. And further, also to provide an organic semiconductor structure and an organic semiconductor device using the organic semiconductor material. To achieve the object, the present invention provides an organic semiconductor material having a structural formula of the following chemical formula 1:-((A)-(B))-&#x2003;&#x2003;1 wherein A is a mesogen exhibiting liquid crystallinity; has a skeletal structure comprising a &#x3c0;-electron ring selected from a group consisting of L-unit of 6&#x3c0;-electron system ring, M-unit of 8&#x3c0;-electron system ring, N-unit of 10&#x3c0;-electron system ring, O-unit of 12&#x3c0;-electron system ring, P-unit of 14&#x3c0;-electron system ring, Q-unit of 16&#x3c0;-electron system ring, R-unit of 18&#x3c0;-electron system ring, S-unit of 20 &#x3c0;-electron system ring, T-unit of 22&#x3c0;-electron system ring, U-unit of 24&#x3c0;-electron system ring and V-unit of 26&#x3c0;-electron system ring (whereupon L, M, N, O, P, Q, R, S, T, U and V each represent an integer of 0 to 12, and L+M+N+O+P+Q+R+S+T+U+V is 1 to 12); B has a chain structure with high flexibility; and n is about 3 to about 3000.

Organic semiconductor material, organic semiconductor structure, and organic semiconductor device

An organic semiconductor material, enabling to exhibit liquid crystal phase at wide temperature range including at least ordinary temperature and to exhibit high charge carrier mobility, and an organic semiconductor structure and organic semiconductor device formed from the organic semiconductor material. The organic semiconductor material has a quaterthiophene skeleton as shown in a following chemical formula 1, wherein R1 in the chemical formula 1 is an alkyl group of C1 to C20 or a hydrogen, and R2 is an alkyl group of C1 to C20 or a hydrogen.

There is provided a liquid crystalline organic semiconductor material that can effectively develop electron conductive properties which a liquid crystal system inherently has. The liquid crystalline organic semiconductor material has both an isotropic phase and a smectic liquid crystal phase and comprises an electronically conductive liquid crystal material, wherein the concentration of an impurity in the liquid crystal material is controlled to a lower value than the critical concentration at which the electron conductivity of the liquid crystal material disappears or is significantly reduced rendering ion conduction dominant.

Liquid crystalline organic semiconductor material and organic semiconductor structure using the same

The present invention provides an organic semiconductor device comprising an organic semiconductor layer having good charge carrier transport property, wherein a carrier injection to the organic semiconductor layer is easy. The above problem is solved by an organic semiconductor device comprising a first electrode and a second electrode facing to each other, and an organic semiconductor layer provided in between the first electrode and the second electrode, wherein a charge carrier injection promoting layer is formed in between the organic semiconductor layer and at least one electrode of the first electrode and the second electrode.

Organic semiconductor device

The main object is to provide a manufacturing method of organic semiconductor, an organic semiconductor device structure manufactured by the manufacturing method and an organic semiconductor device, those having uniform and high carrier transport property over a relatively large area. To achieve the object, the present invention provides a manufacturing method of an organic semiconductor structure, wherein the organic semiconductor structure comprises, on a base material, an organic semiconductor layer formed from a liquid crystalline organic semiconductor material, and comprising processes of: forming an oil repellent region and a lipophilic region, which is surrounded by the oil repellent region, on the base material; coating an organic semiconductor layer forming solution, comprising the liquid crystalline organic semiconductor material and a solvent, on the lipophilic region; and crystallizing the liquid crystalline organic semiconductor material by evaporating the solvent in the organic semiconductor layer forming solution coated on the lipophilic region.

Disclosed is a binder-loaded type charge-transport liquid crystal material which comprises a liquid crystal compound and a binder and, in spite of the presence of the binder, can substantially retain the properties inherent in the liquid crystal compound.

Binder-loaded type charge-transport liquid crystal material

Liquid crystalline compounds and process for producing the same

Growing community of inventors

Yokohama, Japan

Junichi Hanna